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BAP65-02,115

NXP Semiconductors

BAP65-02,115 by NXP Semiconductors

BAP65-02,115 by NXP Semiconductors is a PIN diode with 0.9 pF capacitance and 0.9 ohm forward resistance. It is used in attenuators and switching applications, operating b/w -65 to 150 °C. This small outline diode has a breakdown voltage of 30 V and can handle up to 0.715 W power dissipation.

Median Price

$0.195

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 36,807 parts In-Stock

1+ parts

$0.390

100+ parts

$0.194

1k+ parts

$0.177

10k+ parts

$0.149

36,807

$0.390

$0.194

$0.177

$0.149

DigiKey

USA . 15,147 parts In-Stock

1+ parts

$0.390

100+ parts

$0.209

1k+ parts

$0.176

10k+ parts

$0.160

15,147

$0.390

$0.209

$0.176

$0.160

Verical

USA . 27,368 parts In-Stock

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-

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$0.180

27,368

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$0.180

Rochester

USA . 1,964 parts In-Stock

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-

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$0.195

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$0.162

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$0.144

1,964

-

$0.195

$0.162

$0.144

Chip1Stop

Japan . 1,130 parts In-Stock

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-

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$0.169

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$0.134

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1,130

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$0.169

$0.134

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Distributors (In-Stock)

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Digiode

USA . 4,857 parts In-Stock

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$0.151

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$0.151

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Nova Conductors

Japan . 68 parts In-Stock

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$0.186

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68

$0.186

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TME

Poland . 476 parts In-Stock

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$0.360

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$0.243

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476

$0.360

$0.243

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Component Electronics Inc.

Canada . 90 parts In-Stock

1+ parts

$0.380

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$0.290

1k+ parts

$0.250

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90

$0.380

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$0.250

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Chip Stock

USA . 138,000 parts In-Stock

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Vyrian

USA . 73,003 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,736 parts In-Stock

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Anansix

USA . 2,631 parts In-Stock

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VNN

France . 640 parts In-Stock

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Sensible Micro Corp

USA . 75 parts In-Stock

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$0.146

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$0.135

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75

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$0.135

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Cyclops Electronics Ltd

UK . 2 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,372 parts In-Stock

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$0.100

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$0.100

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Ampacity Inc.

Singapore . 64,389 parts In-Stock

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$0.135

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64,389

$0.135

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Corphita

USA . 2,796 parts In-Stock

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$0.143

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Corohmni

South Africa . 236 parts In-Stock

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$0.174

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Continental Prestige Electronics

USA . 2,859 parts In-Stock

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$0.186

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$0.182

2,859

$0.186

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$0.182

Argo Parts USA

USA . 513 parts In-Stock

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$0.186

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$0.180

513

$0.186

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Netroflash

USA . 50 parts In-Stock

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$0.186

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$0.177

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$0.173

50

$0.186

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$0.173

Perfect Parts

USA . 195,035 parts In-Stock

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Lixinc

USA . 11,429 parts In-Stock

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UNI Independent Distributors

Spain . 859 parts In-Stock

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Futuretech Components

Singapore . 705 parts In-Stock

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Overview

Elevate your electronic designs with the high-quality BAP65-02,115 PIN Diode by NXP Semiconductors. Perfect for applications such as attenuators and switching, this single-configured diode offers outstanding performance and reliability. With a maximum power dissipation of 0.715W and a diode forward resistance of 0.9 ohms, this diode delivers exceptional value to customers looking for top-notch components. Trust NXP Semiconductors for cutting-edge technology and superior products that will take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the diode, making it a reliable choice for various applications.

Maximum Diode Capacitance: 0.9 pF

Low diode capacitance ensures fast response times and high-frequency operation, making this product suitable for attenuator and switching applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this PIN diode can withstand harsh environmental conditions and maintain performance in a wide range of applications.

Diode Type: PIN DIODE

The PIN diode technology used in this product provides high power handling capability, low distortion, and fast switching speeds, making it ideal for RF applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures reliable performance and protection against voltage spikes, making this diode suitable for high-power applications.

Technical Specifications

PIN Diodes BAP65-02,115 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Maximum Diode Capacitance:

.9 pF

Nominal Diode Capacitance:

.65 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.9 ohm

Diode Resistive Test Current:

5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.17 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.715 W

Qualification:

Not Qualified

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP65-02,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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