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BAP64-05,215

NXP Semiconductors

BAP64-05,215 by NXP Semiconductors

The NXP Semiconductors BAP64-05,215 is a PIN diode with common cathode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. Ideal for attenuator and switching applications, it can withstand temperatures from -65 to 150°C while offering a max power dissipation of 0.25 W.

Median Price

$0.104

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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Arrow

USA . 94 parts In-Stock

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$0.073

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$0.073

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DigiKey

USA . 64 parts In-Stock

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$0.360

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$0.266

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Verical

USA . 94 parts In-Stock

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$0.073

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Chip1Stop

Japan . 94 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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$0.121

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Digiode

USA . 3,089 parts In-Stock

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$0.328

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Component Electronics Inc.

Canada . 5 parts In-Stock

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$0.380

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$0.290

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$0.250

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Vyrian

USA . 2,537 parts In-Stock

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Anansix

USA . 2,249 parts In-Stock

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VNN

France . 1,000 parts In-Stock

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A2Z Electronics, Inc.

USA . 90 parts In-Stock

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Bristol Electronics

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

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$0.042

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$0.040

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$0.040

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$0.042

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Aztec Data Supply Inc.

USA . 1,557 parts In-Stock

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$0.090

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$0.090

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Ampacity Inc.

Singapore . 87 parts In-Stock

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$0.114

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Semicontronic

India . 87 parts In-Stock

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$0.111

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Argo Parts USA

USA . 4,821 parts In-Stock

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$0.121

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$0.117

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Continental Prestige Electronics

USA . 2,794 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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$0.121

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Corohmni

South Africa . 613 parts In-Stock

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Corphita

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Microchip USA

USA . 295 parts In-Stock

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$0.568

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AZTECH Wire

Italy . 299 parts In-Stock

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Perfect Parts

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Lixinc

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UNI Independent Distributors

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Authorized Procurement Solutions

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Cyclops Electronics Ltd (Excess)

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Overview

Unlock the potential of your electronic devices with the BAP64-05,215 PIN Diode from NXP Semiconductors. Designed with precision and reliability in mind, this common cathode diode offers unparalleled performance in applications such as attenuators and switching systems. With a maximum power dissipation of 0.25W and a breakdown voltage of 175V, this diode ensures seamless operation even in challenging environments. Trust NXP Semiconductors to deliver high-quality components that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diodes, ensuring a longer lifespan.

Frequency Band: S BAND

Ideal for high-frequency applications in the S band, making it suitable for various communication and radar systems.

Maximum Diode Capacitance: 0.35 pF

Low diode capacitance allows for fast switching speeds and efficient attenuation.

Maximum Operating Temperature: 150 °C

Can operate in high-temperature environments without performance degradation.

Minimum Breakdown Voltage: 175 V

Withstands high voltages, ensuring reliability and protection against electrical surges.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Utilizes PIN diode technology for improved RF performance and lower distortion.

Technical Specifications

PIN Diodes BAP64-05,215 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

175 V

Config:

COMMON CATHODE, 2 ELEMENTS

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.52 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

40 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64-05,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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