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BAR8902LRHE6327XTSA1

Infineon Technologies

BAR8902LRHE6327XTSA1 by Infineon Technologies

Infineon's BAR8902LRHE6327XTSA1 is a single PIN diode for L Band applications. With a max diode capacitance of 0.35 pF, it offers low forward resistance of 1.5 ohm and can handle up to 0.25 W power dissipation efficiently at temperatures up to 150°C. Ideal for switching applications due to its positive-intrinsic-negative technology and silicon element material in a chip carrier package style.

Median Price

$0.078

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 21,068 parts In-Stock

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$0.070

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$0.070

Rochester

USA . 12,449 parts In-Stock

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-

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$0.085

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$0.070

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$0.063

12,449

-

$0.085

$0.070

$0.063

Verical

USA . 12,448 parts In-Stock

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$0.078

12,448

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$0.078

Chip1Stop

Japan . 53 parts In-Stock

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53

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Nova Conductors

Japan . 300 parts In-Stock

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$0.062

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300

$0.062

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Digiode

USA . 630 parts In-Stock

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$0.066

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630

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Vyrian

USA . 11,308 parts In-Stock

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VNN

France . 1,296 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 21,206 parts In-Stock

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$0.048

100+ parts

$0.046

1k+ parts

$0.044

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21,206

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$0.044

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Corohmni

South Africa . 937 parts In-Stock

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$0.053

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$0.053

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Aranea Global

USA . 100 parts In-Stock

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$0.061

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$0.058

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100

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Argo Parts USA

USA . 3,496 parts In-Stock

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$0.062

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$0.060

3,496

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Continental Prestige Electronics

USA . 787 parts In-Stock

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$0.062

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787

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Corphita

USA . 472 parts In-Stock

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$0.062

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Component Stockers USA

USA . 27,269 parts In-Stock

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$0.070

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$0.070

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$0.060

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$0.060

27,269

$0.070

$0.070

$0.060

$0.060

Aztec Data Supply Inc.

USA . 843 parts In-Stock

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$0.099

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$0.099

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Ampacity Inc.

Singapore . 11,155 parts In-Stock

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$0.128

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11,155

$0.128

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Perfect Parts

USA . 33,600 parts In-Stock

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33,600

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Overview

Unlock the power of seamless switching with the BAR8902LRHE6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch quality and reliability in their PIN diodes. From L-band applications to high-performance switching, this single-configured diode offers unparalleled value and benefits. With its low diode capacitance, high breakdown voltage, and superior forward resistance, this product ensures optimal performance in any operation. Trust Infineon Technologies to provide you with the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Frequency Band: L BAND

Ideal for applications in the L band frequency range, ensuring optimal performance in that specific range.

Maximum Diode Capacitance: 0.35 pF

Low diode capacitance allows for high-speed switching and low insertion loss, making it suitable for applications requiring fast response times.

Package Style: CHIP CARRIER

Chip carrier package style provides a compact and lightweight design, suitable for space-constrained applications.

Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Maximum Operating Temperature: 150 °C

High maximum operating temperature tolerance allows for operation in a wide range of environmental conditions.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability.

Diode Type: PIN DIODE

PIN diodes offer high power handling capabilities and low distortion, making them suitable for high-frequency RF applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Utilizes PIN diode technology for improved performance characteristics such as low noise and high linearity.

Technical Specifications

PIN Diodes BAR8902LRHE6327XTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

LOW DISTORTION

Application:

SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.5 ohm

Diode Type:

Frequency Band:

L BAND

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Nominal Minority Carrier Lifetime:

.8 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

BAR8902LRHE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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