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BAR88-02VE6127

Infineon Technologies

BAR88-02VE6127 by Infineon Technologies

Infineon's BAR88-02VE6127 is a PIN diode with 0.4 pF capacitance, 2.5 ohm forward resistance, and 80V breakdown voltage. Ideal for L Band applications like switching due to its positive-intrinsic-negative technology and small outline package style. Operating range from -55°C to 125°C makes it versatile for various environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Vyrian

USA . 7,278 parts In-Stock

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VNN

France . 2,116 parts In-Stock

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Nova Conductors

Japan . 70 parts In-Stock

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Digiode

USA . 64 parts In-Stock

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Ampacity Inc.

Singapore . 699 parts In-Stock

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$0.010

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699

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Modulus Dynamics

Lithuania . 7,259 parts In-Stock

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Semicontronic

India . 752 parts In-Stock

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$1.960

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$1.950

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AZTECH Wire

Italy . 362 parts In-Stock

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$8.064

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Component Stockers USA

USA . 512 parts In-Stock

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$99.990

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Argo Parts USA

USA . 4,328 parts In-Stock

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Continental Prestige Electronics

USA . 3,617 parts In-Stock

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Corohmni

South Africa . 628 parts In-Stock

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Corphita

USA . 496 parts In-Stock

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Microchip USA

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Bastille Electronics

Australia . 41 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the BAR88-02VE6127 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality PIN diodes that are perfect for switching applications in the L Band frequency range. With a sleek rectangular package design and dual terminals for easy installation, this product offers unmatched performance and reliability. Experience minimal diode capacitance, low forward resistance, and high breakdown voltage, making it an ideal choice for demanding environments. Trust Infineon to provide you with the best-in-class solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the diode, ensuring reliability and longevity.

Frequency Band: L BAND

Designed for use in the L band frequency range, making it suitable for a variety of applications within this range.

Maximum Diode Capacitance: 0.4 pF

Low diode capacitance allows for high-speed switching capabilities, making this diode ideal for fast switching applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this diode can withstand elevated temperatures without degradation in performance.

Minimum Operating Temperature: -55 °C

Can operate in very low temperatures, providing versatility for various environmental conditions.

Maximum Diode Forward Resistance: 2.5 ohm

Low forward resistance ensures efficient signal transmission with minimal power loss.

Diode Type: PIN DIODE

Pin diodes are known for their fast switching speeds and high power handling capabilities, making them suitable for demanding applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

PIN diode technology offers low distortion and high linearity, making it ideal for RF and microwave applications.

Technical Specifications

PIN Diodes BAR88-02VE6127 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Additional Features:

LOW DISTORTION

Application:

SWITCHING

Minimum Breakdown Voltage:

80 V

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

2.5 ohm

Diode Type:

Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

.5 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.25 W

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAR88-02VE6127 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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