Loading...

Special Microwave Diodes

Special microwave diodes are electronic components that are designed for specific applications in microwave and radio frequency systems. They provide unique properties and characteristics that enable specific functions or tasks, such as high power handling, low noise, and high frequency response.

One example of a special microwave diode is the Schottky diode, which is a high-speed diode that uses a metal-semiconductor junction to allow for fast switching and low forward voltage drop. Schottky diodes are commonly used in high-frequency rectifiers, mixers, and detectors.

Another example is the Gunn diode, which is a semiconductor device that produces microwave signals through the process of Gunn effect. Gunn diodes are commonly used in electronic circuits that require low-power microwave generation, such as radar systems and electronic countermeasures.

The varactor diode is another type of special microwave diode that is used as a voltage-controlled capacitor, allowing for tunable capacitance in electronic circuits. Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators and frequency synthesizers.

Other special microwave diodes include step recovery diodes, which are used as fast-switching diodes in electronic circuits that require precise timing or pulse generation, and avalanche photodiodes, which are used in high-speed optical communication systems.

Special Microwave Diodes

Available Parts 16

Part RoHS Manufacturer Description Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Config Nominal Operating Voltage No. of Elements Package Style (Meter) Sub-Category Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish Minimum Output Power JESD-30 Code Qualification Nominal Diode Capacitance Additional Features Minimum Breakdown Voltage JESD-609 Code Minimum Operating Frequency Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Typical Operating Current Maximum Operating Frequency
ST-4 by Micronetics

ST-4

Micronetics

NOISE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NOISE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.00001 GHz

SILICON

3 GHz

DC1203A by Gec Plessey Semiconductors

DC1203A

Gec Plessey Semiconductors

GUNN DIODE; Surface Mount: YES; Application: CONTINUOUS WAVE; Typical Operating Current: 100 mA; Minimum Operating Frequency: .5 GHz; Minimum Output Power: .005 W;

GUNN DIODE

YES

12 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.005 W

.5 GHz

100 mA

1 GHz

GC6001-17 by Microchip Technology

GC6001-17

Microchip Technology

NOISE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

NOISE DIODE

DUAL

FLAT

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

SINGLE

1

MICROWAVE

Other Diodes

150 Cel

-55 Cel

GOLD

S-CDMW-F2

.5 pF

HIGH RELIABILITY

6 V

e4

SILICON

S8250B by Toshiba

S8250B

Toshiba

IMPATT DIODE; Surface Mount: NO; Minimum Operating Frequency: 10 GHz; Minimum Output Power: 2 W; Maximum Operating Frequency: 20 GHz; Typical Operating Current: 225 mA;

IMPATT DIODE

NO

120 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

2 W

10 GHz

225 mA

20 GHz

S8202A by Toshiba

S8202A

Toshiba

GUNN DIODE; Surface Mount: YES; Terminal Finish: Tin/Lead (Sn/Pb); Nominal Operating Voltage: 10 V; Typical Operating Current: 150 mA; Application: CONTINUOUS WAVE;

GUNN DIODE

YES

10 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

Tin/Lead (Sn/Pb)

.02 W

e0

8.5 GHz

150 mA

12 GHz

S8206 by Toshiba

S8206

Toshiba

GUNN DIODE; Surface Mount: NO; Maximum Operating Frequency: 8 GHz; Application: CONTINUOUS WAVE; Minimum Operating Frequency: 5.5 GHz; Minimum Output Power: .12 W;

GUNN DIODE

NO

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.12 W

5.5 GHz

8 GHz

S8205 by Toshiba

S8205

Toshiba

GUNN DIODE; Surface Mount: NO; Maximum Operating Frequency: 8 GHz; Application: CONTINUOUS WAVE; Minimum Output Power: .05 W; Minimum Operating Frequency: 5.5 GHz;

GUNN DIODE

NO

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.05 W

5.5 GHz

8 GHz

S8250 by Toshiba

S8250

Toshiba

IMPATT DIODE; Surface Mount: NO; Application: CONTINUOUS WAVE;

IMPATT DIODE

NO

Microwave Special Purpose Diodes

CONTINUOUS WAVE

S8201A by Toshiba

S8201A

Toshiba

GUNN DIODE; Surface Mount: NO; Maximum Operating Frequency: 10.5 GHz; Application: CONTINUOUS WAVE; Typical Operating Current: 400 mA; Nominal Operating Voltage: 10 V;

GUNN DIODE

NO

10 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.1 W

8.2 GHz

400 mA

10.5 GHz

S3019B by Toshiba

S3019B

Toshiba

IMPATT DIODE; Surface Mount: NO; Application: CONTINUOUS WAVE; Minimum Output Power: .75 W; Maximum Operating Frequency: 12 GHz; Minimum Operating Frequency: 6 GHz;

IMPATT DIODE

NO

83 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.75 W

6 GHz

135 mA

12 GHz

S3020 by Toshiba

S3020

Toshiba

GUNN DIODE; Typical Operating Current: 50 mA; Maximum Operating Frequency: 12 GHz; Minimum Operating Frequency: 10.5 GHz; Minimum Output Power: .15 W; Nominal Operating Voltage: 8 V;

GUNN DIODE

8 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.15 W

10.5 GHz

50 mA

12 GHz

S8250A by Toshiba

S8250A

Toshiba

IMPATT DIODE; Surface Mount: NO; Maximum Operating Frequency: 20 GHz; Minimum Output Power: 1.7 W; Application: CONTINUOUS WAVE; Nominal Operating Voltage: 120 V;

IMPATT DIODE

NO

120 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

1.7 W

10 GHz

225 mA

20 GHz

S3020A by Toshiba

S3020A

Toshiba

GUNN DIODE; Surface Mount: NO; Application: CONTINUOUS WAVE; Maximum Operating Frequency: 12 GHz; Minimum Operating Frequency: 10.5 GHz; Minimum Output Power: .18 W;

GUNN DIODE

NO

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.18 W

10.5 GHz

12 GHz

S3019A by Toshiba

S3019A

Toshiba

IMPATT DIODE; Surface Mount: NO; Nominal Operating Voltage: 83 V; Maximum Operating Frequency: 12 GHz; Minimum Output Power: .6 W; Typical Operating Current: 130 mA;

IMPATT DIODE

NO

83 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.6 W

6 GHz

130 mA

12 GHz

S3019 by Toshiba

S3019

Toshiba

IMPATT DIODE; Surface Mount: NO; Maximum Operating Frequency: 12 GHz; Typical Operating Current: 100 mA; Minimum Operating Frequency: 6 GHz; Nominal Operating Voltage: 80 V;

IMPATT DIODE

NO

80 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

.5 W

6 GHz

100 mA

12 GHz

5961-01-248-0025 by Renesas Electronics

5961-01-248-0025

Renesas Electronics

IMPATT DIODE; Surface Mount: YES; Application: CONTINUOUS WAVE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Typical Operating Current: 240 mA; Nominal Operating Voltage: 120 V;

IMPATT DIODE

YES

120 V

Microwave Special Purpose Diodes

CONTINUOUS WAVE

3.3 W

9 GHz

NOT SPECIFIED

NOT SPECIFIED

240 mA

12 GHz