Loading...

RF Power Field Effect Transistors (FET)

RF Power Field Effect Transistors (FET) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power FETs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

RF Power Field Effect Transistors (FET)

Available Parts 2,400+

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard
PD55015TR-E by STMicroelectronics

PD55015TR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; JESD-609 Code: e3; Qualification: Not Qualified;

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

7 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD55015-E by STMicroelectronics

PD55015-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Maximum Operating Temperature: 165 Cel; No. of Elements: 1;

N-CHANNEL

SINGLE

YES

73 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

5 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

MW6S004NT1 by NXP Semiconductors

MW6S004NT1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Terminal Form: NO LEAD; Peak Reflow Temperature (C): 260;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

68 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

QUAD

R-PQSO-N4

3

SOURCE

Not Qualified

e3

40

260

PD55003-E by STMicroelectronics

PD55003-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Case Connection: SOURCE; Terminal Form: GULL WING;

N-CHANNEL

SINGLE

YES

31.7 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD85004 by STMicroelectronics

PD85004

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 40 V;

N-CHANNEL

SINGLE

YES

6 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

2 A

SINGLE

R-PSSO-F3

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PD55003L-E by STMicroelectronics

PD55003L-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 14 W; No. of Terminals: 5; Transistor Application: AMPLIFIER;

N-CHANNEL

SINGLE

YES

14 W

PLASTIC/EPOXY

AMPLIFIER

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

5

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

2.5 A

QUAD

S-PQCC-N5

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

MRFE6VP100HR5 by NXP Semiconductors

MRFE6VP100HR5

NXP Semiconductors

N-CHANNEL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;

N-CHANNEL

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

40

260

D1008UK by Tt Electronics Plc

D1008UK

Tt Electronics Plc

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified; Terminal Position: DUAL;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

70 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

GOLD

DUAL

R-CDFM-F4

SOURCE

Not Qualified

LOW NOISE

e4

D1028UK by Tt Electronics Plc

D1028UK

Tt Electronics Plc

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 70 V; Package Shape: RECTANGULAR; No. of Elements: 2;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

70 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

200 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

PD55015S-E by STMicroelectronics

PD55015S-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Case Connection: SOURCE; Maximum Drain Current (ID): 5 A;

N-CHANNEL

SINGLE

YES

73 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

5 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD55015STR-E by STMicroelectronics

PD55015STR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

7 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

BLF574 by NXP Semiconductors

BLF574

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Drain Current (ID): 56 A; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

110 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

56 A

DUAL

R-CDFM-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

PD55015 by STMicroelectronics

PD55015

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; No. of Terminals: 2; Package Shape: RECTANGULAR;

N-CHANNEL

SINGLE

YES

73 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

TIN LEAD

5 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

PD55015S by STMicroelectronics

PD55015S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; JESD-609 Code: e0; Transistor Application: AMPLIFIER;

N-CHANNEL

SINGLE

YES

73 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

TIN LEAD

5 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e0

CGH40010F by Wolfspeed

CGH40010F

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Terminal Finish: GOLD OVER NICKEL; JESD-30 Code: R-CDFM-F2;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

105 Cel

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

CGHV40050P by Wolfspeed

CGHV40050P

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 6.3 A; Transistor Element Material: GALLIUM NITRIDE; Highest Frequency Band: S BAND;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

1

S BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

225 Cel

GALLIUM NITRIDE

6.3 A

DUAL

R-CDFP-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

.3 pF

CGHV96100F2 by Wolfspeed

CGHV96100F2

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: X BAND; No. of Terminals: 2; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

10.5 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

12 A

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-40 Cel

12 A

DUAL

R-CDFM-F2

PD55025-E by STMicroelectronics

PD55025-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Minimum DS Breakdown Voltage: 40 V; Terminal Form: GULL WING;

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

7 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD55003S-E by STMicroelectronics

PD55003S-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 40 V;

N-CHANNEL

SINGLE

YES

31.7 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

MRF6S20010GNR1 by NXP Semiconductors

MRF6S20010GNR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Minimum DS Breakdown Voltage: 68 V; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

68 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

TIN

DUAL

R-PDFM-G2

3

SOURCE

Not Qualified

TO-270BA

e3

40

260

MW6S010NR1 by NXP Semiconductors

MW6S010NR1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; JESD-30 Code: R-PDFM-F2; Package Shape: RECTANGULAR;

N-CHANNEL

SINGLE

YES

61.4 W

PLASTIC/EPOXY

AMPLIFIER

68 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

L BAND

2

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

TIN

DUAL

R-PDFM-F2

3

SOURCE

Not Qualified

TO-270AA

e3

40

260

PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL

SINGLE

YES

31.7 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

2.5 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

AFT05MS004NT1 by NXP Semiconductors

AFT05MS004NT1

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;

MATTE TIN

1

e3

40

260

GS66508T-MR by Gan Systems

GS66508T-MR

Gan Systems

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Case Connection: SOURCE; Terminal Position: BOTTOM;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

4

CHIP CARRIER

METAL-OXIDE SEMICONDUCTOR

150 Cel

GALLIUM NITRIDE

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

30 A

BOTTOM

R-XBCC-N4

3

SOURCE

e4

30

260

PD55025S-E by STMicroelectronics

PD55025S-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 79 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL

SINGLE

YES

79 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

7 A

DUAL

R-PDSO-F2

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 73 W; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 3;

N-CHANNEL

SINGLE

YES

73 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

5 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

CGH40006P by Wolfspeed

CGH40006P

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Shape: RECTANGULAR; Maximum Drain Current (ID): .75 A;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.75 A

2

FLATPACK

FET RF Small Signal

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

.75 A

DUAL

R-CDFP-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

A5G35S008NT6 by NXP Semiconductors

A5G35S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

3

40

260

A2G22S190-01SR3 by NXP Semiconductors

A2G22S190-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;

40

260

CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum Power Gain (Gp): 15 dB; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Shape: RECTANGULAR;

N-CHANNEL

SINGLE

NO

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

85 Cel

GALLIUM NITRIDE

-40 Cel

4.2 A

DUAL

R-CDFM-F2

SOURCE

.15 pF

A3G26H502W17SR3 by NXP Semiconductors

A3G26H502W17SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR; JESD-30 Code: R-CQFP-F6;

N-CHANNEL

SEPARATE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

11.3 dB

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

6

FLATPACK

JUNCTION

150 Cel

GALLIUM NITRIDE

-55 Cel

QUAD

R-CQFP-F6

40

260

CG2H40010F by Wolfspeed

CG2H40010F

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain Current (ID): 1.5 A; Minimum DS Breakdown Voltage: 84 V; Highest Frequency Band: C BAND;

N-CHANNEL

SINGLE

NO

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

84 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-40 Cel

1.5 A

DUAL

R-CDFM-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

.186 pF

NE5550979A-T1-A by Renesas Electronics

NE5550979A-T1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (Abs) (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL

SINGLE

YES

25 W

1

3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

3 A

CGHV96050F2 by Wolfspeed

CGHV96050F2

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 100 V; Maximum Drain Current (ID): 6 A; JESD-30 Code: R-CDFM-F2;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

100 V

10 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

X BAND

6 A

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

125 Cel

GALLIUM NITRIDE

-40 Cel

6 A

DUAL

R-CDFM-F2

BLF245B by NXP Semiconductors

BLF245B

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

75 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

14 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

VERY HIGH FREQUENCY BAND

4.5 A

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

75 W

200 Cel

SILICON

1.5 ohm

4.5 A

DUAL

R-CDFM-F4

NOT APPLICABLE

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

CGH40045F by Wolfspeed

CGH40045F

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Qualification: Not Qualified;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

FET RF Small Signal

HIGH ELECTRON MOBILITY

175 Cel

GALLIUM NITRIDE

GOLD OVER NICKEL

DUAL

R-CDFM-F2

SOURCE

Not Qualified

e4

NE5550234-T1-AZ by Renesas Electronics

NE5550234-T1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 12.5 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

N-CHANNEL

SINGLE

YES

12.5 W

1

.6 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.6 A

PD55025TR-E by STMicroelectronics

PD55025TR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 165 Cel; Transistor Element Material: SILICON; No. of Terminals: 2;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

7 A

DUAL

R-PDSO-G2

SOURCE

Not Qualified

HIGH RELIABILITY

NOT SPECIFIED

NOT SPECIFIED

PD57060-E by STMicroelectronics

PD57060-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .079 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 7 A;

N-CHANNEL

SINGLE

YES

.079 W

PLASTIC/EPOXY

AMPLIFIER

65 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

7 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

7 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

225

CGH25120F by Wolfspeed

CGH25120F

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; No. of Terminals: 2; Terminal Position: DUAL;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

120 V

FLAT

SQUARE

ENHANCEMENT MODE

1

S BAND

2

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

S-CDFM-F2

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

AFT05MS003NT1 by NXP Semiconductors

AFT05MS003NT1

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Terminal Finish: TIN; No. of Terminals: 3;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-40 Cel

TIN

SINGLE

R-PSSO-F3

1

SOURCE

e3

40

260

1.1 pF

PD55008-E by STMicroelectronics

PD55008-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52.8 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 165 Cel;

N-CHANNEL

SINGLE

YES

52.8 W

PLASTIC/EPOXY

AMPLIFIER

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

Matte Tin (Sn) - annealed

4 A

DUAL

R-PDSO-G2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

30

250

PD55003L by STMicroelectronics

PD55003L

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 26.6 W; Qualification: Not Qualified; Maximum Drain Current (ID): 2.5 A;

N-CHANNEL

SINGLE

YES

26.6 W

PLASTIC/EPOXY

AMPLIFIER

40 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

5

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

2.5 A

QUAD

S-PQCC-N5

SOURCE

Not Qualified

HIGH RELIABILITY

e0

A5G26S008NT6 by NXP Semiconductors

A5G26S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;

3

40

260

MRFE6VP61K25HR6 by NXP Semiconductors

MRFE6VP61K25HR6

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Peak Reflow Temperature (C): 260; Package Shape: RECTANGULAR;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

1300 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

125 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

SILICON

DUAL

R-CDFM-F4

SOURCE

Not Qualified

40

260

PD55003STR-E by STMicroelectronics

PD55003STR-E

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.7 W; Maximum Operating Temperature: 165 Cel; No. of Terminals: 2;

N-CHANNEL

SINGLE

YES

31.7 W

PLASTIC/EPOXY

AMPLIFIER

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

2.5 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

165 Cel

SILICON

MATTE TIN

2.5 A

DUAL

R-PDSO-F2

3

SOURCE

Not Qualified

HIGH RELIABILITY

e3

CGHV40030P by Wolfspeed

CGHV40030P

Wolfspeed

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFP-F2; No. of Terminals: 2; Terminal Form: FLAT;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

15 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

C BAND

2

FLATPACK

HIGH ELECTRON MOBILITY

85 Cel

GALLIUM NITRIDE

-40 Cel

4.2 A

DUAL

R-CDFP-F2

SOURCE

NOT SPECIFIED

NOT SPECIFIED

.15 pF

NE5550779A-T1-A by Renesas Electronics

NE5550779A-T1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Maximum Power Dissipation (Abs): 17.8 W; Maximum Drain Current (ID): 2.1 A; Maximum Drain Current (Abs) (ID): 2.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

N-CHANNEL

SINGLE

17.8 W

1

2.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.1 A