Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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CGH40010P by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND, featuring HIGH ELECTRON MOBILITY GaN technology. This amplifier transistor has a max temperature of 105°C and comes in a RECTANGULAR package for surface mount applications.
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This material ensures excellent thermal conductivity and durability, making the product suitable for high performance and long-term use.
N-channel transistors generally have better performance characteristics and lower resistance, making them ideal for high-frequency applications.
Single configuration simplifies circuit design and can potentially save space in the overall system.
Designed specifically for amplification applications, ensuring optimal performance in signal boosting.
Ease of installation and space-saving benefits for modern PCB designs.
High breakdown voltage capability provides reliability and protection against voltage spikes.
Rectangular shape allows for efficient integration into circuit layouts.
Flat terminals provide stable and secure connections during installation.
Enhancement mode operation allows for precise control over the transistor's conductivity, enhancing performance.
Designed for use in the C band frequency range, which is commonly utilized in communication and radar applications.
Simplified two-terminal design for straightforward circuit integration.
Flatpack style offers a compact form factor for efficient space utilization in electronic systems.
High electron mobility technology enhances the transistor's performance, particularly in high-frequency applications.
High operating temperature tolerance ensures reliability and stable performance under varying environmental conditions.
Gallium nitride material offers high electron mobility and power handling capabilities, enhancing overall transistor performance.
Dual terminal positions provide flexibility in circuit design and connection options.
The source connection provides a stable reference point for signal amplification and transmission.
RF Power Field Effect Transistors (FET) CGH40010P attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed
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CGH40010P Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.
NDT2955
National Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
1N4148
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LM7805CT/NOPB
FIXED POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; Maximum Voltage Tolerance: 5 %; Operating Temperature (TJ-Max): 125 Cel; Maximum Output Voltage-1: 5.25 V;
Surge Components
SMBJ18CA
Brightking
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Taitron Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358MX
ROHM
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
LM358N
Harris Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
M39029/58-360
Defense Logistics Agency
CONNECTOR ACCESSORY; Contact Type: CRIMP REAR RELEASE; Mating Contacts: M39029/56-348, M39029/57-354; Insertion Tool Sources: MILITARY; Contact Gender: MALE; Alternate Contact Sources: MILITARY;
LM358AN
Signetics
1N4148WT
International Semiconductor
Sensitron Semiconductor
DS18B20Z+
Maxim Integrated
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Body Width: 3.9 inch; Maximum Supply Voltage: 5.5 V;
M24308/2-1F
Souriau
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Body or Shell Style: RECEPTACLE; MIL Conformity: YES;
MBR130T1G
Onsemi
MBR130T1G by Onsemi is a Schottky rectifier diode with max output current of 1A and max repetitive peak reverse voltage of 30V. It operates b/w -65 to 125°C, suitable for surface mount applications in electronics requiring low forward voltage drop.
Unitrode
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
PD54008TR-E
STMicroelectronics
PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
ARF463AP1G
Microsemi
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Case Connection: SOURCE; Qualification: Not Qualified;
PD57045S-E
PD57045S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, breakdown voltage of 65 V, and operates in the ultra-high frequency band. Ideal for compact designs with high power dissipation up to 73 W.
PD55003-01
PD55003-01 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 40V min breakdown voltage, operates at ultra-high frequencies, and supports a max drain current of 2.5A. Ideal for compact surface mount designs, it excels in high-temperature environments up to 150 °C.
BLF878,112
NXP Semiconductors
NXP Semiconductors BLF878,112 is an N-CHANNEL RF Power FET with 2 elements for AMPLIFIER applications. It operates in the ULTRA HIGH FREQUENCY BAND, with a max power dissipation of 300W and a min DS breakdown voltage of 89V. The package style is FLANGE MOUNT, suitable for surface mount assembly at a max temp of 200°C.
MRFX1K80NR5
RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
A3T21H360W23SR6
RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD85050STR
RF Power Field-Effect Transistors;
934061845118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-CDSO-G2;
934055708135
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2.2 A;
934056522112
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Maximum Drain Current (ID): 12 A; Package Shape: RECTANGULAR;
PD57018TR-E
PD57018TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 2.5 A and a breakdown voltage of 65 V. It operates in the ultra-high frequency band with a power dissipation of 31.7 W. This surface-mount transistor ensures reliable performance up to 165 °C.
MRF136Y
Tyco Electronics M/a-com
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
MRF176GU
Motorola
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934061174118
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
A2I25D025GNR1
RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260;
BLF6G13LS-250PG
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Minimum Power Gain (Gp): 15 dB; Operating Mode: ENHANCEMENT MODE;
MRF184
Freescale Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; Qualification: Not Qualified;
MRF8P29300HR6
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MHT1008NT1
NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
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CGH40010F
Wolfspeed
CGH40010F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and uses Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, this transistor has a max operating temperature of 105°C and features a ceramic, metal-sealed co-fired package body.
CGH40006P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Shape: RECTANGULAR; Maximum Drain Current (ID): .75 A;
CGH40045F
CGH40045F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for S BAND applications. Featuring HIGH ELECTRON MOBILITY GaN technology, it operates in ENHANCEMENT MODE at up to 175°C. This FLANGE MOUNT transistor has a METAL-SEALED COFIRED CERAMIC package and GOLD OVER NICKEL terminal finish.
CGH40025F
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Transistor Application: AMPLIFIER; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
CGH40006S
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; No. of Terminals: 6; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CGH40120F
CGH40120F by Wolfspeed is an N-CHANNEL RF Power FET with 120V DS Breakdown Voltage. It operates in S BAND, ideal for AMPLIFIER applications. Featuring GALLIUM NITRIDE technology, it has a max temp of 150°C and can operate from -40 to 150°C.
CGH40006S-AMP1
CGH40006S-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: S-PDSO-N6; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Package Style (Meter): SMALL OUTLINE;
CGH40025P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel; Terminal Form: FLAT;
CGH40120F-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Package Style (Meter): FLANGE MOUNT; No. of Terminals: 2;
CGH40180PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Highest Frequency Band: S BAND; Peak Reflow Temperature (C): NOT SPECIFIED;
CGH40006P-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
CGH40035F-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; No. of Terminals: 2;
CGH40035F
CGH40035F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the S BAND frequency range and features a Gallium Nitride transistor element. Ideal for amplifier applications, this FET has a ceramic, metal-sealed co-fired package body and can withstand temperatures up to 175°C.
CGH40045F-TB
CGH40045F-TB by Wolfspeed is a ceramic, metal-sealed co-fired RF power FET with N-channel polarity. It operates in enhancement mode and has a min DS breakdown voltage of 120V. This transistor is commonly used as an amplifier in S-band applications.
CGH40045P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Qualification: Not Qualified;
CGH40090PP-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 120 V; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; No. of Terminals: 4;
CGH40090PP
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: GALLIUM NITRIDE;
CGH40180PP-TB
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 120 V; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY;
CGH40120P
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Minimum DS Breakdown Voltage: 120 V; Peak Reflow Temperature (C): NOT SPECIFIED;
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