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PD20015S-E

STMicroelectronics

PD20015S-E by STMicroelectronics

PD20015S-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 79 W.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,157 parts In-Stock

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2,157

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Vyrian

USA . 1,008 parts In-Stock

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1,008

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Anansix

USA . 170 parts In-Stock

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170

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,185 parts In-Stock

1+ parts

$0.441

100+ parts

-

1k+ parts

$0.397

10k+ parts

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1,185

$0.441

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$0.397

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MKK Technologies

India . 1,897 parts In-Stock

1+ parts

$0.829

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1,897

$0.829

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DigiPath Technology Company

USA . 1,897 parts In-Stock

1+ parts

$0.829

100+ parts

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1,897

$0.829

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Corphita

USA . 3,598 parts In-Stock

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3,598

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Parana Technologies

USA . 1,960 parts In-Stock

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$0.527

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1,960

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$0.527

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Overview

Elevate your designs with the PD20015S-E from STMicroelectronics, a trusted leader in innovative RF power solutions. This N-channel FET excels in amplifier applications, delivering exceptional efficiency and reliability for ultra-high frequency needs. Designed for seamless surface mounting, it ensures easy integration into your projects. With its robust performance and proven quality, this transistor is the perfect choice to enhance your systems and drive success.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package ensures durability and protection against environmental conditions, making this FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher performance in switching and amplifying applications due to lower on-resistance, making this transistor efficient.

Configuration: SINGLE

A single configuration allows for simpler circuit designs while minimizing space, which is ideal for compact applications.

Transistor Application: AMPLIFIER

Specifically designed for amplification, this FET can enhance signal strength, making it suitable for various audio and RF applications.

Surface Mount: YES

Surface mount capability allows for automated assembly and smaller footprint on PCBs, enhancing design flexibility.

Minimum DS Breakdown Voltage: 40 V

A minimum breakdown voltage of 40V ensures reliable operation under high voltage conditions, providing robustness in demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape facilitates efficient layout and design on PCBs, allowing for optimized performance and space utilization.

Terminal Form: FLAT

Flat terminals provide good thermal performance and easier soldering, ensuring reliable connections and heat dissipation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode provides high input impedance and better control over the device's operating range, improving overall circuit performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capability in the UHF range makes this FET suitable for applications like RF communication, where high-frequency performance is critical.

Maximum Drain Current (Abs) (ID): 7 A

A maximum drain current rating of 7A allows the FET to handle substantial loads, making it versatile for various high-power applications.

No. of Terminals: 2

With only two terminals, the design simplicity aids in reducing layout complexity while maintaining functionality in circuits.

Maximum Power Dissipation (Abs): 79 W

A high power dissipation capability of 79W allows for operational efficiency in high power applications, preventing overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options, enhancing stability and mechanical reliability in a variety of applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology enables high-speed operation and less power consumption, enhancing overall efficiency for modern electronic applications.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature of 165 °C ensures performance under extreme conditions, making it suitable for demanding environments.

Transistor Element Material: SILICON

Silicon material offers reliable performance and durability in various applications, making it a trusted choice in the semiconductor industry.

Maximum Drain Current (ID): 7 A

Repeated drain current rating reinforces the FET's ability to accommodate high loads, appealing for applications needing robust power management.

Terminal Position: DUAL

Dual terminal position enhances the flexibility in circuit designs for efficient connections and improved performance.

Case Connection: SOURCE

Source case connection allows for easy integration into circuits, helping in minimizing parasitic resistances for better performance.

Technical Specifications

RF Power Field Effect Transistors (FET) PD20015S-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD20015S-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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