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PD20010-E

STMicroelectronics

PD20010-E by STMicroelectronics

PD20010-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This compact device supports surface mount technology for efficient integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,421 parts In-Stock

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7,421

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Anansix

USA . 1,926 parts In-Stock

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1,926

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Digiode

USA . 1,809 parts In-Stock

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1,809

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ACDS - Activité Composants Distribution Service

France . 3 parts In-Stock

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3

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Distributors (Availability)

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Semicontronic

India . 1,314 parts In-Stock

1+ parts

$1.050

100+ parts

$1.024

1k+ parts

$1.018

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-

1,314

$1.050

$1.024

$1.018

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IDEA Electronic Components Group

UK . 662 parts In-Stock

1+ parts

$1.203

100+ parts

-

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$1.083

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662

$1.203

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$1.083

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MKK Technologies

India . 2,168 parts In-Stock

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$2.263

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2,168

$2.263

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DigiPath Technology Company

USA . 2,168 parts In-Stock

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$2.263

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2,168

$2.263

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$2.295

100+ parts

$2.088

1k+ parts

$1.882

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-

200

$2.295

$2.088

$1.882

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AZTECH Wire

Italy . 40 parts In-Stock

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$13.320

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40

$13.320

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Perfect Parts

USA . 13,793 parts In-Stock

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13,793

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Kepictronics

USA . 3,700 parts In-Stock

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3,700

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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Parana Technologies

USA . 2,129 parts In-Stock

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$1.439

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2,129

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$1.439

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A-Z Elektronik GmbH

Germany . 1,397 parts In-Stock

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1,397

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RC Electronics

USA . 850 parts In-Stock

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850

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Corphita

USA . 225 parts In-Stock

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225

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Cyclops Electronics Ltd (Excess)

UK . 3 parts In-Stock

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Overview

Elevate your RF applications with the PD20010-E by STMicroelectronics, a trusted leader in semiconductor innovation. This high-performance N-channel FET delivers unparalleled efficiency and reliability, making it perfect for amplification tasks in demanding environments. With exceptional power handling and thermal resilience, you can trust that your designs will achieve superior performance without compromise. Experience quality and reliability that only STMicroelectronics can provide!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package ensures durability and resistance to environmental factors, making this FET reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are known for their superior performance in terms of efficiency, allowing for higher current handling and faster switching speeds.

Configuration: SINGLE

A single configuration simplifies circuit design and layout, making it easier to integrate into existing systems.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET enhances signal strength, making it ideal for RF and audio amplification tasks.

Surface Mount: YES

Surface mount technology minimizes space requirements on printed circuit boards, facilitating compact designs.

Minimum DS Breakdown Voltage: 40 V

A minimum breakdown voltage of 40 V allows the FET to operate safely in a variety of high-voltage applications, ensuring reliability.

Package Shape: RECTANGULAR

The rectangular shape of the package aids in efficient space use on PCBs and can contribute to better thermal management.

Terminal Form: GULL WING

Gull wing terminals facilitate easy soldering processes and are known for their mechanical stability in various applications.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows the FET to achieve high on-state conductivity, contributing to efficient power usage in circuits.

Highest Frequency Band: L BAND

Operational in the L band, this FET is suitable for communication applications, including RF broadcasting and radar.

Maximum Drain Current (Abs) (ID): 5 A

With a maximum drain current of 5 A, this FET can handle substantial loads, making it versatile for different amplifier designs.

No. of Terminals: 2

Having only two terminals simplifies the design and reduces the complexity of the circuit.

Maximum Power Dissipation (Abs): 59 W

A maximum power dissipation of 59 W allows for high-power applications without risk of overheating, enhancing durability.

Package Style (Meter): SMALL OUTLINE

A small outline package helps save space on the PCB, allowing for more compact designs.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology contributes to high input impedance and low power consumption, making this FET energy-efficient.

Maximum Operating Temperature: 165 °C

With a maximum operating temperature of 165 °C, this FET can function well in high-temperature environments, increasing application versatility.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical characteristics and thermal stability, suitable for a wide range of temperatures.

Maximum Drain Current (ID): 5 A

The capability of handling a 5 A drain current indicates robustness, making it ideal for high-performance RF applications.

Terminal Position: DUAL

Dual terminal positioning enables convenient integration into circuits, simplifying assembly and installation.

Case Connection: SOURCE

Having the case connection set to source optimizes power delivery and enhances the overall efficiency of the circuit.

Technical Specifications

RF Power Field Effect Transistors (FET) PD20010-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

ESD PROTECTION, HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

5 A

Maximum Drain Current (ID):

5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD20010-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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