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PD20015-E

STMicroelectronics

PD20015-E by STMicroelectronics

PD20015-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 165 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,394 parts In-Stock

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Digiode

USA . 2,511 parts In-Stock

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2,511

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Anansix

USA . 950 parts In-Stock

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950

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,571 parts In-Stock

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$0.481

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$0.433

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1,571

$0.481

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$0.433

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MKK Technologies

India . 1,997 parts In-Stock

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$0.905

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1,997

$0.905

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DigiPath Technology Company

USA . 1,997 parts In-Stock

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$0.905

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1,997

$0.905

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AZTECH Wire

Italy . 593 parts In-Stock

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$13.490

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593

$13.490

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Component Stockers USA

USA . 430 parts In-Stock

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$99.990

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430

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Perfect Parts

USA . 1,091 parts In-Stock

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Corphita

USA . 989 parts In-Stock

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Parana Technologies

USA . 750 parts In-Stock

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$0.575

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750

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Overview

Unlock exceptional performance with the PD20015-E from STMicroelectronics, a leading name in the semiconductor industry known for innovation and reliability. Designed for RF power applications, this N-channel FET delivers superior amplification in ultra-high frequency bands, ensuring your systems operate at peak efficiency. With robust construction and advanced thermal management, it promises longevity and consistent performance, empowering your designs with unmatched quality and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides excellent durability and thermal performance, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel configuration offers enhanced electron mobility, resulting in higher efficiency and better performance in amplification tasks.

Configuration: SINGLE

A single configuration simplifies the design and integration into circuits, making it user-friendly and cost-effective.

Transistor Application: AMPLIFIER

Designed for amplification, it is ideal for signal processing applications, contributing to high-quality audio and RF signal amplification.

Surface Mount: YES

Surface mount capability allows for compact designs and easier automated assembly, reducing overall production costs and space requirements.

Minimum DS Breakdown Voltage: 40 V

A minimum breakdown voltage of 40V ensures robust performance in various high-voltage applications, enhancing reliability.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCB layouts and facilitates easier handling.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering stability and ease of installation, making it convenient for manufacturers.

Operating Mode: ENHANCEMENT MODE

Enhancement mode operation allows for better control and high performance in switching and amplification applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Capable of handling ultra-high frequency signals, this FET is suited for advanced communication systems.

Maximum Drain Current (Abs) (ID): 7 A

A maximum drain current of 7A means it can drive significant loads, supporting robust application requirements.

No. of Terminals: 2

Having two terminals simplifies connections and integrates easily into various circuit designs.

Maximum Power Dissipation (Abs): 79 W

At 79W power dissipation, it manages heat effectively, ensuring safe and stable operation even under high power conditions.

Package Style (Meter): FLANGE MOUNT

Flange mount design enhances thermal dissipation and provides a sturdy connection for high-power applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Using MOS technology leads to lower power consumption and higher efficiency, crucial for modern electronic applications.

Maximum Operating Temperature: 165 °C

A high maximum operating temperature allows the FET to function reliably in demanding environments, increasing durability.

Transistor Element Material: SILICON

Silicon as the material ensures good electrical properties and widespread compatibility with existing semiconductor technology.

Terminal Position: DUAL

Dual terminal position aids in flexible integration into circuit designs, allowing for versatile application setups.

Case Connection: SOURCE

Source connection provides direct access for power supply, optimizing performance and efficiency in a circuit.

Technical Specifications

RF Power Field Effect Transistors (FET) PD20015-E attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDFM-G2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

165 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD20015-E Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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