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DE275-501N16A

IXYS Corporation

DE275-501N16A by IXYS Corporation

DE275-501N16A by IXYS Corp is a N-channel RF Power FET with 500V DS breakdown voltage, 16A max drain current, and operates in the VHF band. It is used for switching applications in enhancement mode, featuring a plastic/epoxy package and isolated case connection.

Median Price

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2

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< 1k

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Nova Conductors

Japan . 39 parts In-Stock

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39

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Sensible Micro Corp

USA . 30 parts In-Stock

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30

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Ampacity Inc.

Singapore . 202 parts In-Stock

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$37.050

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202

$37.050

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Continental Prestige Electronics

USA . 4,195 parts In-Stock

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Argo Parts USA

USA . 3,970 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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FE SAS

France . 11 parts In-Stock

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Overview

IXYS Corporation brings you the DE275-501N16A, a top-quality RF Power Field Effect Transistor designed for switching applications. This single N-channel transistor offers a minimum DS breakdown voltage of 500V and operates in the very high frequency band. With a maximum drain current of 16A and an operating temperature of up to 175°C, this enhancement mode transistor provides reliable performance in a small outline package. Trust IXYS Corporation for cutting-edge technology and superior products that deliver exceptional value and benefits to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, making the product long-lasting and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have better performance characteristics compared to P-channel FETs, making this product a good choice for various applications.

Configuration: SINGLE

Simplifies circuit design and ensures ease of use.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering efficient performance in such scenarios.

Surface Mount: YES

Enables easy and convenient installation on printed circuit boards.

Minimum DS Breakdown Voltage: 500 V

Provides high voltage handling capability, making it suitable for high-power applications.

Package Shape: RECTANGULAR

Efficient use of space on the circuit board and easy integration into existing systems.

Terminal Form: FLAT

Facilitates simple and secure connections during installation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode FETs offer easier control of the device, improving overall performance.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating at very high frequencies, making it suitable for applications that require fast signal switching.

No. of Terminals: 6

Provides multiple connection options for greater versatility in circuit design.

Package Style (Meter): SMALL OUTLINE

Space-saving design allows for compact and efficient circuit layouts.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Offers efficient performance characteristics and reliable operation for various applications.

Maximum Operating Temperature: 175 °C

Can operate at high temperatures, ensuring stability and reliability under demanding conditions.

Transistor Element Material: SILICON

Silicon-based transistors are known for their high performance and reliability, making this product a dependable choice.

Maximum Drain Current (ID): 16 A

Capable of handling high current levels, making it suitable for power applications.

Terminal Position: DUAL

Provides flexibility in circuit connections and allows for versatile usage.

Case Connection: ISOLATED

Helps prevent interference and ensures stable operation in various circuit configurations.

Technical Specifications

RF Power Field Effect Transistors (FET) DE275-501N16A attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

16 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

DE275-501N16A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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