Loading...

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.

Other Function Memory ICs

Available Parts 2,400+

Part RoHS Manufacturer Description Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Access Mode Surface Mount No. of Functions Technology Screening Level Terminal Form Parallel or Serial Operating Mode Sector Size (Words) Maximum Supply Current No. of Words Sequential Burst Length Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Mixed Memory Type Toggle Bit Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Sub-Category Minimum Data Retention Time Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature No. of Sectors/Size Command User Interface Terminal Finish I2C Control Byte Terminal Position No. of Ports Write Protection JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Endurance Maximum Clock Frequency (fCLK) Width Qualification Serial Bus Type Boot Block Memory Density Minimum Supply Voltage (Vsup) Additional Features Page Size (words) JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Type Maximum Standby Current Interleaved Burst Length Length Common Flash Interface Maximum Access Time Programming Voltage (V) Data Polling
EPCQ4ASI8N by Intel

EPCQ4ASI8N

Intel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

5 mA

524288 words

3

8

SMALL OUTLINE

SOP8,.25

20

1.27 mm

85 Cel

3-STATE

512KX8

512K

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G8

3

3.6 V

1.75 mm

100 MHz

3.9 mm

4194304 bit

2.7 V

e3

30

260

NOR TYPE

.00005 Amp

4.9 mm

DS2401P/T&R by Maxim Integrated

DS2401P/T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Technology: CMOS;

MEMORY CIRCUIT

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

64 bit

2.8 V

e0

3.94 mm

DS2401P+T&R by Analog Devices

DS2401P+T&R

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; No. of Functions: 1;

MEMORY CIRCUIT

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

64 bit

2.8 V

e3

30

260

3.94 mm

EPCQ128ASI16N by Intel

EPCQ128ASI16N

Intel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MEMORY CIRCUIT

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

20 mA

16777216 words

3

8

SMALL OUTLINE

SOP16,.4

20

1.27 mm

85 Cel

3-STATE

16MX8

16M

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G16

3

3.6 V

2.65 mm

100 MHz

7.5 mm

134217728 bit

2.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00006 Amp

10.3 mm

CY15B102Q-SXET by Infineon Technologies

CY15B102Q-SXET

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 262144 words;

MEMORY CIRCUIT

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SYNCHRONOUS

5 mA

262144 words

3.3

2.5/3.3

8

SMALL OUTLINE

SOP8,.3

SRAMs

1.27 mm

125 Cel

256KX8

256K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.6 V

2.03 mm

5.23 mm

Not Qualified

2097152 bit

2 V

260

.00075 Amp

5.28 mm

DS2401P+ by Analog Devices

DS2401P+

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Width: 3.76 mm;

MEMORY CIRCUIT

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

64 bit

2.8 V

e3

30

260

3.94 mm

DS2401P by Maxim Integrated

DS2401P

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 6; Package Code: SOC; Package Shape: RECTANGULAR; Memory Width: 1;

MEMORY CIRCUIT

INDUSTRIAL

6

SOC

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

C BEND

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOC6,.17

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-C6

1

6 V

1.5 mm

3.76 mm

Not Qualified

64 bit

2.8 V

e0

20

240

3.94 mm

DS2502P-E48/TR by Dallas Semiconductor

DS2502P-E48/TR

Dallas Semiconductor

Other Memory ICs;

7230 by Intel

7230

Intel

MEMORY CIRCUIT; No. of Terminals: 22; Package Code: DIP; Package Shape: RECTANGULAR; Package Style (Meter): IN-LINE; No. of Functions: 1;

MEMORY CIRCUIT

22

DIP

RECTANGULAR

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

IN-LINE

2.54 mm

DUAL

R-PDIP-T22

5.08 mm

10.16 mm

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

27.3685 mm

DS2401Z/T&R by Maxim Integrated

DS2401Z/T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

6.5 mm

DS2401Z+T&R by Analog Devices

DS2401Z+T&R

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 64 words;

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

30

260

6.5 mm

CY15B102Q-SXE by Infineon Technologies

CY15B102Q-SXE

Infineon Technologies

MEMORY CIRCUIT; Temperature Grade: AUTOMOTIVE; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Memory Width: 8;

MEMORY CIRCUIT

AUTOMOTIVE

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

AEC-Q100

GULL WING

SYNCHRONOUS

5 mA

262144 words

3.3

2.5/3.3

8

SMALL OUTLINE

SOP8,.3

SRAMs

1.27 mm

125 Cel

256KX8

256K

-40 Cel

PURE TIN

DUAL

R-PDSO-G8

3

3.6 V

2.03 mm

5.23 mm

Not Qualified

2097152 bit

2 V

30

260

.00075 Amp

5.28 mm

DS2401Z by Maxim Integrated

DS2401Z

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: SOP; Package Shape: RECTANGULAR; No. of Functions: 1;

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e0

20

240

6.5 mm

DS2401Z+ by Analog Devices

DS2401Z+

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 4; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: Matte Tin (Sn) - annealed;

MEMORY CIRCUIT

INDUSTRIAL

4

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

64 words

5

3/5

1

SMALL OUTLINE

SOT-223

Other Memory ICs

2.3 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G4

1

6 V

1.8 mm

3.5 mm

Not Qualified

64 bit

2.8 V

e3

30

260

6.5 mm

DS2411R/T&R by Maxim Integrated

DS2411R/T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TSSOP; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;

MEMORY CIRCUIT

INDUSTRIAL

3

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

.1 mA

64 words

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TO-236

Other Memory ICs

.95 mm

85 Cel

64X1

64

-40 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

5.25 V

1.12 mm

1.3 mm

Not Qualified

64 bit

1.5 V

e0

20

240

.000001 Amp

2.92 mm

DS2411R/TR by Dallas Semiconductor

DS2411R/TR

Dallas Semiconductor

Other Memory ICs; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Qualification: Not Qualified; Maximum Supply Current: .1 mA; Package Body Material: PLASTIC/EPOXY;

INDUSTRIAL

3

PLASTIC/EPOXY

YES

.1 mA

2/5

TO-236

Other Memory ICs

85 Cel

-40 Cel

Not Qualified

.000001 Amp

DS2411R+T&R by Analog Devices

DS2411R+T&R

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 2.92 mm;

MEMORY CIRCUIT

INDUSTRIAL

3

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

.1 mA

64 words

2/5

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TO-236

Other Memory ICs

.95 mm

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

5.25 V

1.12 mm

1.3 mm

Not Qualified

64 bit

1.5 V

e3

30

260

.000001 Amp

2.92 mm

EPCQ64ASI16N by Intel

EPCQ64ASI16N

Intel

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Package Style (Meter): SMALL OUTLINE;

MEMORY CIRCUIT

INDUSTRIAL

16

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SERIAL

SYNCHRONOUS

15 mA

8388608 words

3

8

SMALL OUTLINE

SOP16,.4

20

1.27 mm

85 Cel

3-STATE

8MX8

8M

-40 Cel

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G16

3

3.6 V

2.65 mm

100 MHz

7.5 mm

67108864 bit

2.7 V

e3

NOT SPECIFIED

NOT SPECIFIED

NOR TYPE

.00005 Amp

10.3 mm

MR2A16ACYS35 by Freescale Semiconductor

MR2A16ACYS35

Freescale Semiconductor

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 18.41 mm;

MEMORY CIRCUIT

INDUSTRIAL

44

TSOP2

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

ASYNCHRONOUS

262144 words

3.3

3.3

16

SMALL OUTLINE, THIN PROFILE

TSOP44,.46,32

SRAMs

.8 mm

85 Cel

256KX16

256K

-40 Cel

MATTE TIN

DUAL

R-PDSO-G44

3

3.6 V

1.2 mm

10.16 mm

Not Qualified

4194304 bit

3 V

e3

40

260

.028 Amp

18.41 mm

35 ns

ST25DV04K-IER6T3 by STMicroelectronics

ST25DV04K-IER6T3

STMicroelectronics

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Functions: 1;

MEMORY CIRCUIT

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

4096 words

3.3

1

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

4KX1

4K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.2 mm

3 mm

4096 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

4.4 mm

ST25DV64K-IER6S3 by STMicroelectronics

ST25DV64K-IER6S3

STMicroelectronics

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Width: 3.9 mm;

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

65536 words

3.3

1

SMALL OUTLINE

1.27 mm

85 Cel

64KX1

64K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

65536 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

M24SR64-YDW6T/2 by STMicroelectronics

M24SR64-YDW6T/2

STMicroelectronics

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Pitch: .65 mm;

MEMORY CIRCUIT

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

8192 words

3.3

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

.65 mm

85 Cel

8KX8

8K

-40 Cel

DUAL

R-PDSO-G8

1

5.5 V

1.2 mm

3 mm

65536 bit

2.7 V

4.4 mm

DS2401 by Maxim Integrated

DS2401

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; Terminal Form: THROUGH-HOLE;

MEMORY CIRCUIT

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

64 words

5

3/5

1

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

Tin/Lead (Sn/Pb)

BOTTOM

O-PBCY-T3

6 V

Not Qualified

64 bit

2.8 V

e0

20

240

DS2401+ by Analog Devices

DS2401+

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; JESD-609 Code: e3;

MEMORY CIRCUIT

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

64 words

5

3/5

1

CYLINDRICAL

Other Memory ICs

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

1

6 V

Not Qualified

64 bit

2.8 V

e3

30

250

DS1996L-F5 by Maxim Integrated

DS1996L-F5

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; Power Supplies (V): 3/5; Package Body Material: METAL;

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

65536 words

3/5

1

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

64KX1

64K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

NOT SPECIFIED

NOT SPECIFIED

15000 ns

DS1996L-F5+ by Analog Devices

DS1996L-F5+

Analog Devices

MEMORY CIRCUIT; Temperature Grade: OTHER; No. of Terminals: 2; Package Shape: ROUND; Power Supplies (V): 3/5; JESD-30 Code: O-MEDB-N2;

MEMORY CIRCUIT

OTHER

2

ROUND

METAL

YES

1

CMOS

NO LEAD

ASYNCHRONOUS

8192 words

3/5

8

DISK BUTTON

BUTTON,.68IN

SRAMs

70 Cel

8KX8

8K

-40 Cel

END

O-MEDB-N2

6 V

Not Qualified

65536 bit

2.8 V

NOT SPECIFIED

NOT SPECIFIED

47L16-I/SN by Microchip Technology

47L16-I/SN

Microchip Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 3.6 V;

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

EEPROM+SRAM

8

SMALL OUTLINE

SOP8,.23

1.27 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G8

3

3.6 V

1.75 mm

3.9 mm

16384 bit

2.7 V

e3

40

260

4.9 mm

400 ns

47L16-I/ST by Microchip Technology

47L16-I/ST

Microchip Technology

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: RECTANGULAR; Terminal Finish: MATTE TIN;

MEMORY CIRCUIT

INDUSTRIAL

8

TSSOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

2048 words

EEPROM+SRAM

8

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

TSSOP8,.25

.65 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

DUAL

1

R-PDSO-G8

1

3.6 V

1.2 mm

3 mm

16384 bit

2.7 V

e3

40

260

4.4 mm

400 ns

ST25DV16K-IER6S3 by STMicroelectronics

ST25DV16K-IER6S3

STMicroelectronics

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

MEMORY CIRCUIT

INDUSTRIAL

8

SOP

RECTANGULAR

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

SYNCHRONOUS

16384 words

3.3

1

SMALL OUTLINE

1.27 mm

85 Cel

16KX1

16K

-40 Cel

DUAL

R-PDSO-G8

5.5 V

1.75 mm

3.9 mm

16384 bit

1.8 V

NOT SPECIFIED

NOT SPECIFIED

4.9 mm

DS2401/T&R by Maxim Integrated

DS2401/T&R

Maxim Integrated

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; Surface Mount: NO;

MEMORY CIRCUIT

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

64 words

5

3/5

1

CYLINDRICAL

SIP3,.1,50

Other Memory ICs

1.27 mm

85 Cel

64X1

64

-40 Cel

TIN LEAD

BOTTOM

O-PBCY-T3

6 V

Not Qualified

64 bit

2.8 V

e0

DS2401+T&R by Analog Devices

DS2401+T&R

Analog Devices

MEMORY CIRCUIT; Temperature Grade: INDUSTRIAL; No. of Terminals: 3; Package Code: TO-92; Package Shape: ROUND; Terminal Finish: Matte Tin (Sn) - annealed;

MEMORY CIRCUIT

INDUSTRIAL

3

TO-92

ROUND

PLASTIC/EPOXY

NO

1

CMOS

THROUGH-HOLE

ASYNCHRONOUS

64 words

5

3/5

1

CYLINDRICAL

Other Memory ICs

85 Cel

64X1

64

-40 Cel

Matte Tin (Sn) - annealed

BOTTOM

O-PBCY-T3

6 V

Not Qualified

64 bit

2.8 V

e3

250

DS2411R+U by Analog Devices

DS2411R+U

Analog Devices

MEMORY CIRCUIT; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - annealed;

MEMORY CIRCUIT

Matte Tin (Sn) - annealed