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MR256A08BMA35R

Everspin Technologies

MR256A08BMA35R by Everspin Technologies

MR256A08BMA35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for applications requiring low profile, fine pitch grid array packages in commercial temperature grade environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 6,366 parts In-Stock

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Nova Conductors

Japan . 54 parts In-Stock

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AZTECH Wire

Italy . 413 parts In-Stock

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$18.265

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Authorized Procurement Solutions

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,259 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Everspin Technologies presents the MR256A08BMA35R, a cutting-edge memory IC designed for seamless integration and top-notch performance. With a commitment to quality and innovation, Everspin Technologies delivers reliable solutions that cater to a wide range of applications. Offering unparalleled value, this product boasts enhanced speed, efficiency, and reliability, making it the perfect choice for customers seeking advanced memory solutions. Upgrade your systems with the MR256A08BMA35R and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Surface Mount: YES

Being surface mountable makes it easy to integrate into electronic circuit boards, saving space and simplifying assembly.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for flexibility and easy integration into various systems without strict timing requirements.

Nominal Supply Voltage / Vsup (V): 3.3

The 3.3V supply voltage is common and widely supported, making it compatible with many systems and power sources.

No. of Terminals: 48

Having 48 terminals provides sufficient connectivity options for interfacing with other components in a circuit.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can reliably function in a variety of environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this memory IC efficient and reliable.

Technical Specifications

Other Function Memory ICs MR256A08BMA35R attributes and parameters. Explore more Other Function Memory ICs devices from Everspin Technologies

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

S-PBGA-B48

Length:

8 mm

Memory Density:

262144 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

48

No. of Words:

32768 words

No. of Words Code:

32K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

32KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA48,6X8,30

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Qualification:

Not Qualified

Maximum Seated Height:

1.35 mm

Maximum Standby Current:

.007 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

65 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.75 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

8 mm

Trade Compliance

MR256A08BMA35R Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Everspin Technologies

Everspin Technologies, Inc. Headquartered in Chandler, Arizona, Everspin Technologies, Inc. is the worldwide leader in designing, manufacturing, and commercially shipping discrete and embedded Magnetoresistive RAM (MRAM) and Spin-transfer Torque MRAM (STT-MRAM) into markets and applications where data persistence and integrity, low latency, and security are paramount. With over 120 Million MRAM and STT-MRAM products deployed in data center, cloud storage, energy, industrial, automotive, and transportation markets, Everspin has built the strongest and fastest growing foundation of MRAM users in the world. Core Competence with MRAM: From Perpendicular to Field-Switched Everspin’s knowledge and experience in magnetic memory design, manufacture and delivery into relevant applications is unique within the semiconductor industry. With an intellectual property portfolio of more than 600 active patents and applications, Everspin leads the market in development of both in-plane and perpendicular magnetic tunnel junction (MTJ) STT-MRAM bit cells. Manufacturing - The Capacity to Deliver In 2014, Everspin partnered with GLOBALFOUNDRIES for full turn-key 300mm high-volume production of in-plane and perpendicular MTJ ST-MRAM on advanced technology nodes including 40nm, 28nm and beyond. In addition, Everspin owns and operates an integrated magnetic fabrication line located in Chandler, Arizona, where Everspin produces MRAM products are based on 180nm, 130nm, and 90nm process technology nodes. Product package and test operations are located in China, Taiwan and other Asian countries.

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