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CY15B108QN-20LPXCES

Infineon Technologies

CY15B108QN-20LPXCES by Infineon Technologies

CY15B108QN-20LPXCES by Infineon Technologies is a 1MX8 MEMORY CIRCUIT with 8388608 bit Memory Density. It operates at 3.3V, has a small outline package style, and synchronous operating mode. Ideal for applications requiring high memory capacity in commercial temperature environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 616 parts In-Stock

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616

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Nova Conductors

Japan . 600 parts In-Stock

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600

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Vyrian

USA . 512 parts In-Stock

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512

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Modulus Dynamics

Lithuania . 1,329 parts In-Stock

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$3.777

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$3.626

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$3.475

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Ampacity Inc.

Singapore . 719 parts In-Stock

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$8.000

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719

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AZTECH Wire

Italy . 713 parts In-Stock

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$16.579

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713

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Continental Prestige Electronics

USA . 3,550 parts In-Stock

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Argo Parts USA

USA . 358 parts In-Stock

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358

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Corphita

USA . 199 parts In-Stock

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199

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unlock the power of seamless data storage and retrieval with the CY15B108QN-20LPXCES by Infineon Technologies. This cutting-edge Other Function Memory IC boasts unparalleled quality and reliability thanks to its manufacturer's reputation for excellence. Ideal for a wide range of applications, this product offers customers unbeatable value, benefits, and advantages. Experience the difference with this innovative memory circuit that delivers optimal performance and efficiency, setting a new standard in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and cost-effectiveness, making it a reliable choice for memory IC applications.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation and replacement of the memory IC.

Package Shape: RECTANGULAR

The rectangular shape ensures compatibility with a wide range of PCB layouts, making it versatile for various designs.

Operating Mode: SYNCHRONOUS

Synchronous operation ensures efficient data transfer and synchronization, improving overall performance.

Nominal Supply Voltage / Vsup (V): 3.3

The nominal supply voltage of 3.3V is commonly used in many electronic systems, offering compatibility and ease of integration.

No. of Terminals: 8

With 8 terminals, this memory IC provides sufficient connectivity options for data input and output requirements.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile design save space on the PCB while maintaining high memory capacity, ideal for compact applications.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can perform reliably in various environmental conditions.

Organization: 1MX8

The 1MX8 organization allows for efficient memory storage and retrieval, catering to various data processing needs.

Minimum Operating Temperature: 0 °C

The minimum operating temperature of 0°C ensures the memory IC remains functional even in cold environments.

Terminal Position: DUAL

The dual terminal position provides flexibility in connecting the memory IC within the PCB layout, accommodating different design requirements.

Maximum Seated Height: 0.55 mm

The low maximum seated height minimizes the space required for the memory IC, making it suitable for slim device designs.

Width: 3.23 mm

The compact width of 3.23 mm allows for space-efficient placement on the PCB, ideal for densely populated electronic assemblies.

Minimum Supply Voltage (Vsup): 1.8 V

The minimum supply voltage of 1.8V ensures power efficiency while maintaining reliable memory operation.

Length: 3.28 mm

The length of 3.28 mm provides a balanced form factor for the memory IC, facilitating easy integration into various electronic devices.

Temperature Grade: COMMERCIAL

The commercial temperature grade indicates that this memory IC is suitable for standard operating conditions in commercial electronic equipment.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the performance and reliability of the memory IC.

Terminal Form: NO LEAD

The no-lead terminal form simplifies soldering and assembly processes, ensuring a robust connection for the memory IC.

No. of Words: 1048576 words

With 1048576 words capacity, this memory IC can store and retrieve a large volume of data efficiently.

Memory Width: 8

The memory width of 8 bits enables handling of larger data chunks, improving data processing speeds and efficiency.

Terminal Pitch: 0.65 mm

The terminal pitch of 0.65 mm ensures precise alignment and connection of the memory IC within the PCB, minimizing signal interference.

No. of Words Code: 1M

The 1M words code simplifies memory addressing and decoding processes, enhancing overall data access speed and efficiency.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum supply voltage of 3.6V provides a safe operating range for the memory IC, ensuring protection against voltage fluctuations.

Memory Density: 8388608 bit

With a memory density of 8388608 bits, this memory IC offers high storage capacity for data-intensive applications.

Memory IC Type: MEMORY CIRCUIT

As a specialized memory circuit, this IC is designed for efficient data storage and retrieval, making it an ideal choice for memory-intensive tasks.

Technical Specifications

Other Function Memory ICs CY15B108QN-20LPXCES attributes and parameters. Explore more Other Function Memory ICs devices from Infineon Technologies

Specs

JESD-30 Code:

R-PDSO-N8

Length:

3.28 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.8 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3.23 mm

Trade Compliance

CY15B108QN-20LPXCES Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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