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MT29C4G48MAZBBAKS-48IT

Micron Technology

MT29C4G48MAZBBAKS-48IT by Micron Technology

Micron Technology's MT29C4G48MAZBBAKS-48IT is a 512MX8 memory IC with 4294967296 bit memory density. Operating at 1.8V, it features synchronous mode and industrial temperature grade. Suitable for various applications requiring high-density memory solutions.

Median Price

$16.246

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,614 parts In-Stock

1+ parts

$15.350

100+ parts

$12.930

1k+ parts

$12.810

10k+ parts

-

1,614

$15.350

$12.930

$12.810

-

Verical

USA . 999 parts In-Stock

1+ parts

$16.246

100+ parts

$16.246

1k+ parts

$16.246

10k+ parts

$16.246

999

$16.246

$16.246

$16.246

$16.246

Arrow

USA . 699 parts In-Stock

1+ parts

$16.246

100+ parts

-

1k+ parts

-

10k+ parts

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699

$16.246

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 16 parts In-Stock

1+ parts

$13.460

100+ parts

-

1k+ parts

-

10k+ parts

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16

$13.460

-

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Digiode

USA . 1,184 parts In-Stock

1+ parts

$13.813

100+ parts

-

1k+ parts

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1,184

$13.813

-

-

-

Chip Stock

USA . 23,200 parts In-Stock

1+ parts

-

100+ parts

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23,200

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Cyclops Electronics Ltd

UK . 6,000 parts In-Stock

1+ parts

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6,000

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-

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Vyrian

USA . 2,136 parts In-Stock

1+ parts

-

100+ parts

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2,136

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,873 parts In-Stock

1+ parts

$2.654

100+ parts

-

1k+ parts

-

10k+ parts

-

4,873

$2.654

-

-

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Corohmni

South Africa . 58 parts In-Stock

1+ parts

$3.612

100+ parts

-

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58

$3.612

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Ampacity Inc.

Singapore . 1,276 parts In-Stock

1+ parts

$12.360

100+ parts

-

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1,276

$12.360

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Corphita

USA . 955 parts In-Stock

1+ parts

$13.086

100+ parts

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955

$13.086

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Continental Prestige Electronics

USA . 5,874 parts In-Stock

1+ parts

$13.460

100+ parts

-

1k+ parts

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10k+ parts

$13.191

5,874

$13.460

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-

$13.191

Netroflash

USA . 500 parts In-Stock

1+ parts

$13.460

100+ parts

-

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500

$13.460

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

1+ parts

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100+ parts

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5,000

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Perfect Parts

USA . 3,846 parts In-Stock

1+ parts

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3,846

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Microchip USA

USA . 2,684 parts In-Stock

1+ parts

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2,684

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A-Z Elektronik GmbH

Germany . 2,066 parts In-Stock

1+ parts

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100+ parts

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2,066

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Argo Parts USA

USA . 1,816 parts In-Stock

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1,816

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Overview

Discover the cutting-edge MT29C4G48MAZBBAKS-48IT by Micron Technology, a top-tier manufacturer renowned for quality and innovation. This Memory IC offers unparalleled reliability and performance, making it ideal for a wide range of applications. With a nominal supply voltage of 1.8V and industrial-grade temperature tolerance, this product ensures seamless operation in demanding environments. Experience the benefits of its advanced technology and high memory density, providing customers with exceptional value and efficiency. Upgrade your systems with Micron's top-of-the-line Memory IC for superior performance and peace of mind.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the memory IC, making it a reliable choice.

Surface Mount:

YES - Allows for easy and efficient installation on a circuit board, saving time and effort during assembly.

Package Shape:

RECTANGULAR - This shape allows for a compact design, ideal for space-constrained applications.

Operating Mode:

SYNCHRONOUS - Ensures synchronized data transfer, improving overall system performance and efficiency.

Nominal Supply Voltage (Vsup):

1.8V - Low power consumption with a stable supply voltage for reliable operation.

No. of Terminals:

137 - Sufficient number of terminals for connecting to other components, ensuring proper communication within the system.

Package Style:

GRID ARRAY, VERY THIN PROFILE, FINE PITCH - This style enhances thermal performance while allowing for high-density integration on a PCB.

Maximum Operating Temperature:

85 °C - Wide temperature range makes it suitable for a variety of environments, from industrial to consumer electronics.

Organization:

512MX8 - Efficient memory organization for storing and accessing data with ease.

Minimum Operating Temperature:

40 °C - Capable of operating in extreme temperature conditions without compromising performance.

Terminal Finish:

TIN SILVER COPPER - Provides strong and reliable connections for efficient data transfer.

Terminal Position:

BOTTOM - Simplifies the installation process and improves accessibility during maintenance and repairs.

Maximum Seated Height:

1 mm - Low profile design for easy integration in space-constrained applications.

Width:

10.5 mm - Compact width for fitting into tight spaces while ensuring proper functionality.

Minimum Supply Voltage (Vsup):

1.7V - Allows for operation at lower voltages, saving power and reducing energy consumption.

Maximum Time At Peak Reflow Temperature:

30s - Allows for easy soldering during assembly, ensuring a secure connection to the PCB.

Peak Reflow Temperature:

260C - Withstands high-temperature reflow processes during assembly with no damage to the IC.

Length:

13 mm - Optimized length for fitting into various electronic devices without taking up too much space.

Temperature Grade:

INDUSTRIAL - Suitable for industrial applications requiring high reliability and durability in harsh environments.

Technology:

CMOS - Utilizes advanced CMOS technology for efficient and reliable memory operations.

Terminal Form:

BALL - Provides a reliable connection and easy installation on the PCB.

No. of Words:

536870912 words - Large storage capacity for storing a vast amount of data efficiently.

Memory Width:

8 - Optimized memory width for efficient data transfer and processing.

Terminal Pitch:

0.8 mm - Fine pitch design for high-density integration on a PCB.

No. of Words Code:

512M - Represents high memory capacity for storing and accessing data effectively.

Maximum Supply Voltage (Vsup):

1.95V - Safe maximum supply voltage for stable operation without risking damage to the IC.

Memory Density:

4294967296 bit - High memory density for storing a large amount of data in a compact form factor.

Memory IC Type:

MEMORY CIRCUIT - Versatile memory IC suitable for a wide range of applications requiring reliable data storage and access.

Technical Specifications

Other Function Memory ICs MT29C4G48MAZBBAKS-48IT attributes and parameters. Explore more Other Function Memory ICs devices from Micron Technology

Specs

Additional Features:

IT IS ALSO HAVING 2GBIT (X 32) LPDDR

JESD-30 Code:

R-PBGA-B137

JESD-609 Code:

e1

Length:

13 mm

Memory Density:

4294967296 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

137

No. of Words:

536870912 words

No. of Words Code:

512M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

1 mm

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

10.5 mm

Trade Compliance

MT29C4G48MAZBBAKS-48IT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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