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M36W108T100ZN5

STMicroelectronics

M36W108T100ZN5 by STMicroelectronics

M36W108T100ZN5 from STMicroelectronics is a mixed FLASH+SRAM memory IC with a 1MX8 organization, ideal for asynchronous applications. It operates b/w 2.7V and 3.6V, featuring a max access time of 100ns and a temp range of -20 °C to 85°C. Its compact design (9.8mm x 11.8mm) suits space-constrained devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,974 parts In-Stock

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Vyrian

USA . 4,024 parts In-Stock

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4,024

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Anansix

USA . 2,318 parts In-Stock

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2,318

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 844 parts In-Stock

1+ parts

$3.391

100+ parts

-

1k+ parts

$3.052

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844

$3.391

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$3.052

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MKK Technologies

India . 1,526 parts In-Stock

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$6.377

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$6.377

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DigiPath Technology Company

USA . 1,526 parts In-Stock

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$6.377

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1,526

$6.377

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Corphita

USA . 1,878 parts In-Stock

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1,878

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Parana Technologies

USA . 1,249 parts In-Stock

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$4.055

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Overview

Unlock the potential of your next project with the M36W108T100ZN5 from STMicroelectronics—a leader in innovative memory solutions. This versatile Flash + SRAM memory IC combines efficiency and reliability, ensuring peak performance in demanding applications. Its compact design optimizes space without compromising quality, making it ideal for consumer electronics, industrial automation, and more. Experience superior technology that enhances speed and reduces power consumption, empowering your designs to thrive.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Being surface mount compatible allows for efficient use of circuit board space and enables high-density designs.

Package Shape: RECTANGULAR

The rectangular shape provides optimized space usage on PCB layouts, facilitating easier integration into existing systems.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enables quicker response times for read/write operations, enhancing overall performance in applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM in one IC offers the benefits of both non-volatile storage and fast access memory, making it versatile for different tasks.

Power Supplies (V): 3/3.3

Dual power supply options cater to a wider range of system requirements, enhancing compatibility with various devices.

No. of Terminals: 48

Having 48 terminals allows for a rich set of connections, suitable for complex configurations and applications.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The very thin profile of the grid array package is suitable for applications where space-saving is crucial, making it ideal for compact devices.

Maximum Operating Temperature: 85 °C

A maximum operating temperature of 85 °C ensures reliability in high-heat environments, which is critical for industrial and demanding applications.

Organization: 1MX8

The 1MX8 organization denotes efficient data structure for memory operations, facilitating effective data handling.

Minimum Operating Temperature: -20 °C

Operating as low as -20 °C enables use in cooler environments without risk of performance degradation, expanding application versatility.

Terminal Finish: TIN LEAD

Tin-lead finish provides excellent solderability and enhances long-term reliability of connections, particularly in mission-critical applications.

Terminal Position: BOTTOM

Bottom terminal positioning aids in compact designs while ensuring efficient heat dissipation and facilitating better electrical performance.

Maximum Seated Height: 1 mm

The low maximum seated height allows for installation in low-profile applications, contributing to the design flexibility of the product.

Width: 9.8 mm

With a width of 9.8 mm, this IC is compact enough for tight layouts while providing necessary functionality.

Minimum Supply Voltage (Vsup): 2.7 V

A minimum supply voltage of 2.7 V enhances compatibility with low-voltage systems, broadening its application range.

Length: 11.8 mm

The length of 11.8 mm contributes to the small footprint of the IC, aiding in space-constrained applications.

Technology: CMOS

CMOS technology ensures low power consumption and high-speed operations, making it efficient for both performance and energy use.

Terminal Form: BUTT

Butt terminal form enhances soldering reliability and durability, ensuring long-lasting performance in connection integrity.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA allows for robust performance in demanding applications, ensuring the device can handle higher loads.

No. of Words: 1048576 words

With 1,048,576 words of memory, this IC offers substantial data storage capacity for applications requiring significant data handling.

Memory Width: 8

An 8-bit memory width provides efficient data transfer rates, making this IC suitable for high-speed applications.

Terminal Pitch: 1 mm

The 1 mm terminal pitch facilitates easier PCB routing and assembly, aiding in the design process for manufacturers.

No. of Words Code: 1M

Offering 1M words capacity, this IC is well-suited for applications that require moderate-sized memory solutions.

Maximum Supply Voltage (Vsup): 3.6 V

A maximum supply voltage of 3.6 V expands the range of systems the IC can be integrated into, ensuring flexibility for designers.

Memory Density: 8388608 bit

With a memory density of 8,388,608 bits, this IC provides ample storage for diverse data and application needs.

Memory IC Type: MEMORY CIRCUIT

Being classified as a memory circuit specifies its primary purpose, ensuring it meets developers' storage requirements efficiently.

Maximum Standby Current: 0.00002 Amp

Low standby current minimizes power consumption during idle times, which is crucial for energy-sensitive applications.

Maximum Access Time: 100 ns

A maximum access time of 100 ns allows for rapid data retrieval, making this IC ideal for performance-critical applications.

Technical Specifications

Other Function Memory ICs M36W108T100ZN5 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-20 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZN5 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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