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M36W0R6030B0ZAQ

STMicroelectronics

M36W0R6030B0ZAQ by STMicroelectronics

M36W0R6030B0ZAQ by STMicroelectronics is a versatile memory IC featuring 4M x 16 organization, operating at a nominal voltage of 1.8V. It supports asynchronous access with a max temp of 85 °C and is ideal for industrial applications requiring reliable data storage. Its compact design (10mm x 8mm) ensures efficient integration in space-constrained environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,013 parts In-Stock

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4,013

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Digiode

USA . 3,613 parts In-Stock

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3,613

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Anansix

USA . 1,552 parts In-Stock

1+ parts

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1,552

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,958 parts In-Stock

1+ parts

$4.439

100+ parts

-

1k+ parts

$3.995

10k+ parts

-

1,958

$4.439

-

$3.995

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MKK Technologies

India . 922 parts In-Stock

1+ parts

$8.347

100+ parts

-

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922

$8.347

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DigiPath Technology Company

USA . 922 parts In-Stock

1+ parts

$8.347

100+ parts

-

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922

$8.347

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Corphita

USA . 3,471 parts In-Stock

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3,471

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Parana Technologies

USA . 353 parts In-Stock

1+ parts

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100+ parts

$5.308

1k+ parts

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353

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$5.308

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Overview

Unlock the future of performance with the M36W0R6030B0ZAQ from STMicroelectronics. This advanced memory IC boasts unparalleled reliability and efficiency, making it ideal for industrial applications where quality matters. With its unique FLASH + SRAM mix, this versatile solution enhances device functionality while ensuring energy savings. Rely on STMicroelectronics’ legacy of innovation and excellence to elevate your projects—experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology provides a compact design that is beneficial for space-constrained applications and improves assembly efficiency.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout and placement on printed circuit boards, optimizing space usage.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances system design flexibility and allows for simpler timing requirements, improving overall performance.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM offers a versatile solution for data storage and high-speed processing, making it suitable for a wide range of applications.

Nominal Supply Voltage / Vsup (V): 1.8

A nominal supply voltage of 1.8V ensures low power consumption, which is essential for battery-operated devices.

Power Supplies (V): 1.8

Operating at 1.8V allows for energy efficiency, minimizing heat generation and prolonging the lifespan of the IC.

No. of Terminals: 88

A higher number of terminals supports complex functionalities and connectivity options, accommodating diverse application needs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The grid array design allows for effective thermal dissipation and improved electrical performance in space-restricted environments.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments, the max operating temperature of 85 °C ensures reliable performance in demanding conditions.

Organization: 4MX16

This organization allows for efficient data handling and storage capacity, supporting a variety of data-intensive applications.

Minimum Operating Temperature: -40 °C

The ability to operate at low temperatures (-40 °C) makes this IC suitable for harsh and outdoor environments.

Terminal Finish: TIN LEAD

Using tin-lead for terminal finish enhances solderability and provides reliable electrical connections during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning promotes efficient heat dissipation and aids in effective mounting on circuit boards.

Maximum Seated Height: 1.2 mm

A low seated height ensures compatibility with various low-profile designs, supporting compact product designs.

Width: 8 mm

The compact width allows for efficient utilization of board space in dense electronic assemblies.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures compatibility with a range of low-power systems, enhancing usability.

Length: 10 mm

A compact length supports miniaturization of devices without compromising performance.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature rating ensures reliability and stability in demanding environmental conditions.

Technology: CMOS

CMOS technology offers high integration levels and low power consumption characteristics, making it ideal for modern applications.

Terminal Form: BALL

Ball terminals facilitate better solder connections and enhance reliability during operation.

Maximum Supply Current: 45 mA

The maximum supply current of 45mA aligns well with power management needs in low-power designs.

No. of Words: 4194304 words

A high word count allows for substantial data storage, accommodating large datasets in various applications.

Memory Width: 16

A 16-bit memory width provides a balanced trade-off between performance and complexity for processing data.

Terminal Pitch: 0.8 mm

A 0.8mm terminal pitch is suitable for modern electronics, supporting fine-pitch requirements in densely packed layouts.

No. of Words Code: 4M

Offering 4M words provides ample memory for addressing larger applications and improving performance.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95V allows for flexibility in power supply choices while maintaining performance.

Memory Density: 67108864 bit

The high memory density supports advanced data processing needs, making it ideal for high-performance applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this IC is optimized for data storage, ensuring reliability and performance.

Maximum Standby Current: 0.00001 Amp

Ultra-low maximum standby current enhances energy efficiency, particularly for battery-powered applications.

Maximum Access Time: 70 ns

Fast access time of 70 ns ensures quick data retrieval, improving overall system performance.

Technical Specifications

Other Function Memory ICs M36W0R6030B0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 512K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6030B0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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