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M36W108T120ZN1

STMicroelectronics

M36W108T120ZN1 by STMicroelectronics

M36W108T120ZN1 from STMicroelectronics is a versatile memory IC featuring 1M x 8 organization, operating at 3/3.3V with a max access time of 120 ns. Its thin profile and asynchronous mode make it ideal for compact applications. This CMOS device supports both FLASH and SRAM technologies.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,791 parts In-Stock

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3,791

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Vyrian

USA . 3,019 parts In-Stock

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3,019

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Anansix

USA . 1,256 parts In-Stock

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1,256

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,976 parts In-Stock

1+ parts

$5.153

100+ parts

-

1k+ parts

$4.638

10k+ parts

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1,976

$5.153

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$4.638

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MKK Technologies

India . 2,254 parts In-Stock

1+ parts

$9.690

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2,254

$9.690

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DigiPath Technology Company

USA . 2,254 parts In-Stock

1+ parts

$9.690

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2,254

$9.690

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Parana Technologies

USA . 2,230 parts In-Stock

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$6.161

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2,230

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$6.161

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Corphita

USA . 165 parts In-Stock

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Overview

Unlock the potential of your projects with the M36W108T120ZN1 from STMicroelectronics, a leader in innovative memory solutions. This versatile Flash + SRAM memory IC boasts unparalleled reliability and efficiency, perfect for a wide range of applications from industrial controls to consumer electronics. With a compact design and low power consumption, it enhances performance while reducing footprint. Experience superior quality and support from a trusted manufacturer dedicated to driving your success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides good thermal stability and durability, making the IC suitable for various applications.

Surface Mount: YES

Being surface mount compatible enhances the ease of integration into modern compact circuit designs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient space utilization on PCB layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation simplifies the design and timing requirements for the use in systems.

Mixed Memory Type: FLASH+SRAM

The combination of FLASH and SRAM allows for both data retention and high-speed access, making this IC versatile in applications.

Power Supplies (V): 3/3.3

Flexible voltage supply options enable easy integration into a variety of power systems.

No. of Terminals: 48

A higher terminal count offers more connectivity options and better functionality.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The very thin profile grid array style aids in high-density designs, reducing overall footprint on the PCB.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C ensures reliability in various environmental conditions.

Organization: 1MX8

The organization format allows for efficient data handling and processing applications.

Minimum Operating Temperature: 0 °C

Works in cold environments, making it suitable for outdoor and harsh applications.

Terminal Finish: TIN LEAD

Tin-lead finish offers excellent solderability and reliability in connections.

Terminal Position: BOTTOM

Bottom terminal positioning allows for effective heat dissipation and optimal layout on PCBs.

Maximum Seated Height: 1 mm

The low profile aids in design possibilities where space is a constraint.

Width: 9.8 mm

A compact width enhances flexibility in circuit design.

Minimum Supply Voltage (Vsup): 2.7 V

Allows operation in low-power environments, contributing to energy efficiency.

Length: 11.8 mm

The moderate length fits well into a range of device form factors.

Temperature Grade: COMMERCIAL

Commercial temperature grading ensures consistent performance in typical conditions.

Technology: CMOS

CMOS technology facilitates low power consumption and higher efficiency.

Terminal Form: BUTT

Butt terminal form allows for efficient space use and reliable connections.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA supports a wide range of applications without compromising performance.

No. of Words: 1048576 words

A capacity of 1,048,576 words signifies substantial memory storage capability for complex applications.

Memory Width: 8

An 8-bit memory width is optimal for applications requiring moderate data throughput.

Terminal Pitch: 1 mm

1 mm terminal pitch is standard for many designs, ensuring compatibility with existing layouts.

No. of Words Code: 1M

1M words represent a significant amount of data storage, suitable for a variety of use cases.

Maximum Supply Voltage (Vsup): 3.6 V

Supports a higher voltage range, allowing for better performance and reliability in various circuits.

Memory Density: 8388608 bit

With a memory density of 8,388,608 bits, it can handle substantial data, catering to advanced applications.

Memory IC Type: MEMORY CIRCUIT

Designed specifically as a memory circuit, ensuring optimized performance for storage applications.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current enhances energy efficiency, making it ideal for battery-operated devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns ensures quick data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W108T120ZN1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T120ZN1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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