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M36LLR8860M1ZAQT

STMicroelectronics

M36LLR8860M1ZAQT by STMicroelectronics

M36LLR8860M1ZAQT by STMicroelectronics is a low-profile, synchronous memory IC featuring 16M words of mixed FLASH+PSRAM. It operates at a nominal voltage of 1.8V and supports temperatures from -25 °C to 85 °C. Ideal for compact applications requiring efficient data storage and retrieval.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,989 parts In-Stock

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2,989

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Digiode

USA . 2,539 parts In-Stock

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2,539

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Anansix

USA . 1,196 parts In-Stock

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1,196

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,155 parts In-Stock

1+ parts

$3.420

100+ parts

-

1k+ parts

$3.078

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2,155

$3.420

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$3.078

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MKK Technologies

India . 1,616 parts In-Stock

1+ parts

$6.430

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1,616

$6.430

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DigiPath Technology Company

USA . 1,616 parts In-Stock

1+ parts

$6.430

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1,616

$6.430

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Corphita

USA . 3,351 parts In-Stock

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3,351

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Parana Technologies

USA . 990 parts In-Stock

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$4.089

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990

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$4.089

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Overview

Unlock unparalleled performance with the M36LLR8860M1ZAQT from STMicroelectronics. Renowned for its cutting-edge technology and reliability, this advanced memory IC combines FLASH and PSRAM in a compact design, making it ideal for high-efficiency applications like IoT devices, mobile electronics, and automotive systems. Benefit from low power consumption and robust durability, ensuring your projects run smoothly in diverse environments. Elevate your innovations with STMicroelectronics' trusted quality!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology allows for efficient use of board space and enables automated assembly processes, improving manufacturing speed.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, essential for space-constrained designs in modern electronics.

Operating Mode: SYNCHRONOUS

Synchronous operation offers lower latency and higher data transfer rates, enhancing overall performance in memory-intensive applications.

Mixed Memory Type: FLASH+PSRAM

Combining Flash and PSRAM allows for flexible memory configuration, catering to diverse application requirements.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage contributes to reduced power consumption, increasing energy efficiency in battery-powered devices.

Power Supplies (V): 1.8

Using a 1.8V supply is ideal for modern low-power applications, ensuring compatibility with contemporary IC technologies.

No. of Terminals: 88

Having 88 terminals provides extensive connectivity options, which is beneficial for complex memory interface requirements.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

A low-profile grid array package facilitates better thermal management and allows for high-density circuit layouts.

Maximum Operating Temperature: 85 °C

Operating up to 85 °C ensures reliability in high-temperature environments, making it suitable for industrial applications.

Organization: 16MX16

This organization provides a balanced architecture for performance and capacity, ideal for a wide range of applications.

Minimum Operating Temperature: -25 °C

The ability to operate at -25 °C expands the range of applications, including outdoor and industrial uses.

Terminal Finish: TIN LEAD

The tin-lead finish enhances solderability and provides reliable electrical connections, ensuring product longevity.

Terminal Position: BOTTOM

Bottom terminal positioning is advantageous for compact PCB designs, allowing for better stacking and thermal performance.

Maximum Seated Height: 1.4 mm

A low seated height allows for slim designs, saving space in sophisticated electronic systems.

Width: 8 mm

The 8 mm width is compact and ideal for space-limited board designs, providing flexibility in layout.

Minimum Supply Voltage (Vsup): 1.7 V

A minimum supply voltage of 1.7V ensures operational stability at lower voltage levels, great for energy-sensitive applications.

Length: 10 mm

The compact 10 mm length helps in designing dense electronic configurations, ideal for modern electronics.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making it suitable for high-performance applications.

Terminal Form: BALL

Ball terminal forms enhance soldering performance and improve electrical contact reliability in mounting.

Maximum Supply Current: 52 mA

A maximum supply current of 52 mA supports robust data handling capacities while remaining power efficient.

No. of Words: 16777216 words

With 16,777,216 words, this memory IC provides substantial storage capacity, accommodating demanding applications.

Memory Width: 16

A memory width of 16 bits enables efficient data handling and processing, enhancing overall system performance.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for fine-pitch designs that can meet high-density circuit requirements.

No. of Words Code: 16M

The 16M word code signifies high-capacity storage, relevant for both consumer and industrial memory applications.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95V allows for flexibility in power supply options while maintaining device integrity.

Memory Density: 268435456 bit

With a memory density of 268,435,456 bits, this product supports complex data storage needs, crucial for advanced applications.

Memory IC Type: MEMORY CIRCUIT

Being categorized as a memory circuit highlights its essential role in digital systems, ensuring reliable data storage and retrieval.

Maximum Standby Current: 0.00011 Amp

The extremely low maximum standby current ensures minimal power draw when idle, promoting energy efficiency.

Technical Specifications

Other Function Memory ICs M36LLR8860M1ZAQT attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

PSRAM ALSO ORGANIZED AS 4M X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+PSRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Standby Current:

.00011 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

52 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36LLR8860M1ZAQT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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