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SN74HC670J4

Texas Instruments

SN74HC670J4 by Texas Instruments

SN74HC670J4 by Texas Instruments is a CMOS memory IC with 16 terminals, operating b/w -40 to 85°C. It has power supplies of 2/6V and comes in an industrial-grade ceramic package. Ideal for applications requiring reliable memory functions in harsh environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,993 parts In-Stock

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8,993

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Digiode

USA . 665 parts In-Stock

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665

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Distributors (Availability)

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One Stop Electronics

USA . 1,484 parts In-Stock

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$1.000

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1,484

$1.000

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Parana Technologies

USA . 1,778 parts In-Stock

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$2.237

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$2.740

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1,778

$2.237

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$2.740

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DigiPath Technology Company

USA . 39 parts In-Stock

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$2.464

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$2.267

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39

$2.464

$2.267

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ChromeModa Solutions

Germany . 6,467 parts In-Stock

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$2.514

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$2.061

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6,467

$2.514

$2.061

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IDEA Electronic Components Group

UK . 277 parts In-Stock

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$2.514

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$2.263

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277

$2.514

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$2.263

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AZTECH Wire

Italy . 307 parts In-Stock

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$10.078

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307

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Corphita

USA . 3,658 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the SN74HC670J4 by Texas Instruments. Known for their superior quality and cutting-edge technology, Texas Instruments delivers top-notch components like the SN74HC670J4, which falls under the category of Other Function Memory ICs. With its ceramic package body material and industrial temperature grade, this product offers reliability and durability. Ideal for a wide range of applications, this IC provides customers with value, efficiency, and performance that they can count on. Upgrade your projects today with the SN74HC670J4 and experience the benefits of choosing Texas Instruments.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal conductivity, making it suitable for high temperature environments and ensuring reliable performance over extended periods of use.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient space utilization and easy integration into various electronic devices.

Power Supplies (V): 2/6

Supports a wide range of power supply voltages, offering flexibility in different operating environments.

No. of Terminals: 16

Sufficient number of terminals for connecting to other components and facilitating smooth signal transmission.

Package Style (Meter): IN-LINE

In-line package style makes it easier to arrange and connect multiple components together in a circuit.

Maximum Operating Temperature: 85 °C

Capable of operating at high temperatures, making it suitable for industrial applications where heat dissipation is a concern.

Minimum Operating Temperature: -40 °C

Can operate in low temperature conditions, ensuring reliable performance in a wide range of environmental settings.

Terminal Position: DUAL

Dual terminal position enhances connectivity and ensures stable signal transmission between the memory IC and other components.

Temperature Grade: INDUSTRIAL

Industrial temperature grade ensures the memory IC can withstand harsh operating conditions in industrial settings without compromising performance.

Technology: CMOS

CMOS technology offers low power consumption, high speed, and excellent noise immunity, making the memory IC energy-efficient and reliable.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and secure connections, ensuring stability during operation and maintenance.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy soldering and mounting on PCBs, making it straightforward to integrate the memory IC into electronic devices.

Technical Specifications

Other Function Memory ICs SN74HC670J4 attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T16

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

2/6

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SN74HC670J4 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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