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TMS2716-30JDL

Texas Instruments

TMS2716-30JDL by Texas Instruments

TMS2716-30JDL by Texas Instruments is a 2Kx8 MOS memory IC with 16384-bit density. It features 300ns access time, operates b/w 0-70°C, and has 3-state output. Ideal for commercial applications requiring fast data retrieval in a ceramic package with 24 terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,519 parts In-Stock

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4,519

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Digiode

USA . 612 parts In-Stock

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612

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,332 parts In-Stock

1+ parts

$5.180

100+ parts

-

1k+ parts

$5.782

10k+ parts

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2,332

$5.180

-

$5.782

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DigiPath Technology Company

USA . 478 parts In-Stock

1+ parts

$5.704

100+ parts

$5.247

1k+ parts

-

10k+ parts

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478

$5.704

$5.247

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IDEA Electronic Components Group

UK . 1,537 parts In-Stock

1+ parts

$5.820

100+ parts

-

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$5.238

10k+ parts

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1,537

$5.820

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$5.238

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ChromeModa Solutions

Germany . 775 parts In-Stock

1+ parts

$5.820

100+ parts

$4.772

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-

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775

$5.820

$4.772

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One Stop Electronics

USA . 1,298 parts In-Stock

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$12.000

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1,298

$12.000

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AZTECH Wire

Italy . 337 parts In-Stock

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$14.859

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337

$14.859

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Corphita

USA . 1,682 parts In-Stock

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1,682

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Overview

Unlock the power of advanced memory technology with the TMS2716-30JDL by Texas Instruments. Known for their superior quality and reliability, Texas Instruments delivers top-notch products that exceed industry standards. This memory IC is perfect for a wide range of applications in the electronics industry, offering customers a reliable solution with fast access times and high memory density. Trust in Texas Instruments to provide you with unparalleled performance and value in every product they create.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material offers excellent durability and heat resistance, ensuring the product's reliability in various operating conditions.

No. of Terminals: 24

Having 24 terminals allows for sufficient connectivity options and versatility in how the memory IC can be integrated into different systems.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this memory IC can withstand elevated temperatures without compromising its performance, making it suitable for a wide range of applications.

Organization: 2KX8

The 2KX8 organization indicates that this memory IC has a capacity of 2048 words with a width of 8, providing ample storage and data processing capabilities.

Output Characteristics: 3-STATE

The 3-STATE output characteristics allow the memory IC to drive bus lines effectively and support multiplexed data transmission, enhancing overall system efficiency.

Technology: MOS

Utilizing MOS technology offers high-speed operation and low power consumption, making this memory IC energy-efficient and suitable for battery-powered devices.

Technical Specifications

Other Function Memory ICs TMS2716-30JDL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

300 ns

JESD-30 Code:

R-XDIP-T24

Memory Density:

16384 bit

Memory Width:

8

No. of Terminals:

24

No. of Words:

2048 words

No. of Words Code:

2K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

2KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

TMS2716-30JDL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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