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TMS2150-5JL

Texas Instruments

TMS2150-5JL by Texas Instruments

TMS2150-5JL by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 55ns access time, 145mA max supply current, and 0-70°C operating temp. Ideal for applications requiring high-speed memory functions in commercial-grade environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,524 parts In-Stock

1+ parts

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4,524

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Vyrian

USA . 3,760 parts In-Stock

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3,760

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,044 parts In-Stock

1+ parts

$3.928

100+ parts

-

1k+ parts

$4.401

10k+ parts

-

2,044

$3.928

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$4.401

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DigiPath Technology Company

USA . 1,569 parts In-Stock

1+ parts

$4.326

100+ parts

-

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1,569

$4.326

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ChromeModa Solutions

Germany . 5,186 parts In-Stock

1+ parts

$4.414

100+ parts

$3.619

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5,186

$4.414

$3.619

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IDEA Electronic Components Group

UK . 778 parts In-Stock

1+ parts

$4.414

100+ parts

-

1k+ parts

$3.973

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778

$4.414

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$3.973

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One Stop Electronics

USA . 1,328 parts In-Stock

1+ parts

$15.000

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1,328

$15.000

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AZTECH Wire

Italy . 617 parts In-Stock

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$17.248

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617

$17.248

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Corphita

USA . 4,277 parts In-Stock

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4,277

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Overview

Enhance your electronic projects with the high-quality TMS2150-5JL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch products that guarantee reliability and performance. The TMS2150-5JL falls under the category of Other Function Memory ICs, making it versatile for various applications. With a nominal supply voltage of 5V and an organization of 512X9, this memory circuit offers unmatched value and benefits to customers. Upgrade your designs with the TMS2150-5JL and experience superior quality and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

The ceramic package body material provides durability and reliability to the memory IC, making it suitable for various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

With a nominal supply voltage of 5V, this memory IC can easily integrate into systems with standard power requirements.

No. of Words: 512 words

The memory IC has a large capacity of 512 words, which allows for storing and processing a significant amount of data efficiently.

Maximum Operating Temperature: 70 °C

The memory IC can operate at temperatures up to 70°C, ensuring reliable performance in varying environmental conditions.

Technology: MOS

The MOS technology used in this memory IC offers high-speed operation and low power consumption, making it an energy-efficient choice.

Technical Specifications

Other Function Memory ICs TMS2150-5JL attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

55 ns

JESD-30 Code:

R-XDIP-T24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-5JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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