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TMS2150-35DW

Texas Instruments

TMS2150-35DW by Texas Instruments

TMS2150-35DW by Texas Instruments is a 512x9 MEMORY CIRCUIT IC with 35ns access time, suitable for commercial applications. It operates at 5V, has a max standby current of 0.145A, and comes in a small outline package with dual terminals.

Median Price

$8.920

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 160 parts In-Stock

1+ parts

$8.920

100+ parts

-

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160

$8.920

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Vyrian

USA . 5,413 parts In-Stock

1+ parts

-

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5,413

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Digiode

USA . 2,645 parts In-Stock

1+ parts

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2,645

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 500 parts In-Stock

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500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,368 parts In-Stock

1+ parts

$3.075

100+ parts

-

1k+ parts

$3.591

10k+ parts

-

2,368

$3.075

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$3.591

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DigiPath Technology Company

USA . 158 parts In-Stock

1+ parts

$3.386

100+ parts

-

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158

$3.386

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ChromeModa Solutions

Germany . 5,904 parts In-Stock

1+ parts

$3.455

100+ parts

$2.833

1k+ parts

-

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5,904

$3.455

$2.833

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IDEA Electronic Components Group

UK . 1,961 parts In-Stock

1+ parts

$3.455

100+ parts

-

1k+ parts

$3.110

10k+ parts

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1,961

$3.455

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$3.110

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One Stop Electronics

USA . 835 parts In-Stock

1+ parts

$4.000

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835

$4.000

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AZTECH Wire

Italy . 338 parts In-Stock

1+ parts

$8.184

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338

$8.184

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Corphita

USA . 669 parts In-Stock

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669

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Overview

Elevate your electronic designs with the TMS2150-35DW by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers cutting-edge technology in the form of this memory circuit IC. Perfect for a wide range of applications, this small outline package offers 512x9 organization and a lightning-fast maximum access time of 35 ns. With a nominal supply voltage of 5V and low standby current, this IC is not only efficient but also cost-effective. Upgrade your projects today with the TMS2150-35DW and experience the difference that Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material offers durability and stability for the memory IC, ensuring a longer lifespan.

Surface Mount: YES

Surface mount capability makes it easier to integrate this memory IC into various electronic devices and circuit boards.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard 5V supply voltage, making it compatible with many systems and reducing the need for additional components.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can perform reliably even under high temperature conditions.

Organization: 512X9

With an organization of 512x9, this memory IC offers a good balance between storage capacity and data retrieval speed.

Technology: MOS

Utilizing MOS technology ensures efficient and reliable performance for this memory circuit.

Maximum Access Time: 35 ns

A fast maximum access time of 35 nanoseconds allows for quick retrieval of data, making this memory IC suitable for high-speed applications.

Technical Specifications

Other Function Memory ICs TMS2150-35DW attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

35 ns

JESD-30 Code:

R-PDSO-G24

Memory IC Type:

Memory Width:

9

No. of Terminals:

24

No. of Words:

512 words

No. of Words Code:

512

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512X9

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP24,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.145 Amp

Sub-Category:

SRAMs

Maximum Supply Current:

145 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2150-35DW Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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