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TMS2501NC

Texas Instruments

TMS2501NC by Texas Instruments

TMS2501NC by Texas Instruments is a MOS memory circuit IC with 24 terminals in an in-line rectangular package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. The through-hole terminal form and 2.54mm pitch enhance its ease of integration into electronic systems.

Median Price

$14.860

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 16 parts In-Stock

1+ parts

$14.860

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16

$14.860

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Vyrian

USA . 6,292 parts In-Stock

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6,292

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Digiode

USA . 1,863 parts In-Stock

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1,863

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Electronic Expediters

USA . 140 parts In-Stock

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140

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ECAB

Sweden . 75 parts In-Stock

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75

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Sinequanon

UK . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 252 parts In-Stock

1+ parts

$3.000

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252

$3.000

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Parana Technologies

USA . 298 parts In-Stock

1+ parts

$3.550

100+ parts

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$4.073

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298

$3.550

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$4.073

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DigiPath Technology Company

USA . 405 parts In-Stock

1+ parts

$3.909

100+ parts

$3.596

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405

$3.909

$3.596

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ChromeModa Solutions

Germany . 1,965 parts In-Stock

1+ parts

$3.989

100+ parts

$3.271

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1,965

$3.989

$3.271

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IDEA Electronic Components Group

UK . 425 parts In-Stock

1+ parts

$3.989

100+ parts

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$3.590

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425

$3.989

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$3.590

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AZTECH Wire

Italy . 529 parts In-Stock

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$11.157

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529

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Corphita

USA . 4,803 parts In-Stock

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4,803

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Overview

Upgrade your electronics with the TMS2501NC by Texas Instruments, a high-quality memory circuit IC that delivers reliable performance and durability. Manufactured by industry leader Texas Instruments, this product is designed to meet the highest standards in terms of quality and innovation. Ideal for a wide range of applications, this memory IC offers unparalleled value and benefits, making it the perfect choice for customers looking for top-notch performance and efficiency in their electronic devices. Trust Texas Instruments to provide you with the best in memory IC technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLastic/Epoxy material provides durability and protection to the IC, ensuring longer lifespan and reliability.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space and easy integration into various electronic devices.

No. of Terminals: 24

With 24 terminals, this IC can support complex memory functions and connections, making it versatile for different applications.

Package Style (Meter): IN-LINE

In-line package style makes it easy to install and replace the IC in a circuit, saving time and effort during maintenance.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this IC can withstand heat and perform reliably in various environments.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature allows this IC to function in cold conditions, expanding its usability in different scenarios.

Terminal Position: DUAL

Dual terminal position provides redundancy and stability in connections, reducing the risk of signal loss or failure.

Technology: MOS

MOS technology offers high speed and low power consumption, making this memory IC efficient and effective in electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easy to solder and provide strong connections, ensuring reliable performance of the IC in a circuit.

Terminal Pitch: 2.54 mm

With a standard terminal pitch of 2.54 mm, this IC can easily be integrated into various PCB designs and circuits.

Memory IC Type: MEMORY CIRCUIT

As a memory circuit IC, this product offers storage and retrieval of data, making it essential for many electronic applications.

Technical Specifications

Other Function Memory ICs TMS2501NC attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDIP-T24

Memory IC Type:

No. of Terminals:

24

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP24,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS2501NC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-218-1995, 5962012181995

NIIN

012181995

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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