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SMJ2708-45FEM

Texas Instruments

SMJ2708-45FEM by Texas Instruments

SMJ2708-45FEM by Texas Instruments is a 1Kx8 MOS memory IC with 8192-bit density. It features 3-STATE output, operates b/w -55 to 125°C, and has a max access time of 450ns. Ideal for military-grade applications requiring high-speed data storage in a compact chip carrier package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,699 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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7,699

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Digiode

USA . 148 parts In-Stock

1+ parts

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-

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148

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 386 parts In-Stock

1+ parts

$3.338

100+ parts

-

1k+ parts

$3.861

10k+ parts

-

386

$3.338

-

$3.861

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DigiPath Technology Company

USA . 115 parts In-Stock

1+ parts

$3.675

100+ parts

$3.381

1k+ parts

-

10k+ parts

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115

$3.675

$3.381

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ChromeModa Solutions

Germany . 1,740 parts In-Stock

1+ parts

$3.750

100+ parts

$3.075

1k+ parts

-

10k+ parts

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1,740

$3.750

$3.075

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IDEA Electronic Components Group

UK . 445 parts In-Stock

1+ parts

$3.750

100+ parts

-

1k+ parts

$3.375

10k+ parts

-

445

$3.750

-

$3.375

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AZTECH Wire

Italy . 579 parts In-Stock

1+ parts

$10.934

100+ parts

-

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10k+ parts

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579

$10.934

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One Stop Electronics

USA . 1,017 parts In-Stock

1+ parts

$22.000

100+ parts

-

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1,017

$22.000

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Corphita

USA . 3,872 parts In-Stock

1+ parts

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3,872

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Overview

Unleash the power of innovation with the Texas Instruments SMJ2708-45FEM memory IC. Crafted with precision and expertise, this cutting-edge product offers unmatched quality and reliability. Ideal for a wide range of applications in various industries, this memory IC delivers superior performance and efficiency. Trust in Texas Instruments to provide you with top-notch solutions that exceed expectations. Upgrade your systems with the SMJ2708-45FEM and experience the value and benefits it brings to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material offers high thermal conductivity and stability, making it ideal for applications with high operating temperatures.

Surface Mount: YES

Surface mount technology allows for easy assembly and space-saving on the PCB, making the product more efficient.

Screening Level: 38535Q/M;38534H;883B

High screening levels ensure reliability and compliance with industry standards for quality and performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product is suitable for harsh environments and extended use.

Organization: 1KX8

Organized as 1 kilobit by 8 bits, this memory IC can efficiently store and retrieve data in byte-sized chunks.

Output Characteristics: 3-STATE

3-state output allows for bus sharing and efficient communication between multiple devices on the same bus.

Minimum Operating Temperature: -55 °C

With a low minimum operating temperature, this product can withstand extreme cold conditions without compromising performance.

Technology: MOS

MOS technology offers low power consumption and high speed performance, making the product energy-efficient and fast.

No. of Words: 1024 words

With a capacity of 1024 words, this memory IC can store a significant amount of data for various applications.

Memory Width: 8

8-bit memory width allows for efficient data processing and storage in byte format.

Terminal Pitch: 1.27 mm

With a small terminal pitch, this product enables high-density mounting on the PCB, saving space and improving overall board design.

Maximum Access Time: 450 ns

Fast access time of 450 nanoseconds ensures quick retrieval and processing of data, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs SMJ2708-45FEM attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

450 ns

JESD-30 Code:

R-XQCC-N32

Memory Density:

8192 bit

Memory Width:

8

No. of Terminals:

32

No. of Words:

1024 words

No. of Words Code:

1K

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Organization:

1KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC32,.45X.55

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

MOS

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SMJ2708-45FEM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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