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TMS4C1050-3N

Texas Instruments

TMS4C1050-3N by Texas Instruments

TMS4C1050-3N by Texas Instruments is a CMOS MEMORY CIRCUIT IC with 16 terminals, operating at 5V. It has a max access time of 25ns and standby current of 0.005A. This IN-LINE package is ideal for commercial applications requiring reliable memory functionality in the temperature range of 0 to 70°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,931 parts In-Stock

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5,931

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Digiode

USA . 869 parts In-Stock

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869

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Distributors (Availability)

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Parana Technologies

USA . 436 parts In-Stock

1+ parts

$2.631

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-

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$3.120

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436

$2.631

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$3.120

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DigiPath Technology Company

USA . 1,528 parts In-Stock

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$2.897

100+ parts

$2.665

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1,528

$2.897

$2.665

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IDEA Electronic Components Group

UK . 739 parts In-Stock

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$2.956

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$2.660

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739

$2.956

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$2.660

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ChromeModa Solutions

Germany . 262 parts In-Stock

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$2.956

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$2.424

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262

$2.956

$2.424

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AZTECH Wire

Italy . 302 parts In-Stock

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$12.405

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302

$12.405

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One Stop Electronics

USA . 499 parts In-Stock

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$14.000

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499

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Corphita

USA . 4,182 parts In-Stock

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Overview

Unlock the power of innovation with the TMS4C1050-3N by Texas Instruments. Known for their unparalleled quality and reliability, Texas Instruments delivers cutting-edge solutions to meet your needs. This memory circuit IC is versatile and perfect for a wide range of applications. With a nominal supply voltage of 5V and maximum operating temperature of 70°C, this IC offers superior performance and efficiency. Trust Texas Instruments to provide you with the tools you need to succeed in today's competitive market. Elevate your projects with the TMS4C1050-3N and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good thermal stability and durability for the memory IC, making it suitable for various operating conditions.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power supply systems, making integration easier.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, this memory IC can perform reliably even in high-temperature environments.

Technology: CMOS

Being based on CMOS technology, this memory IC offers low power consumption and high noise immunity, enhancing overall efficiency and reliability.

Maximum Access Time: 25 ns

The fast maximum access time of 25 ns ensures quick data retrieval and processing, making this memory IC suitable for applications requiring high-speed operation.

Technical Specifications

Other Function Memory ICs TMS4C1050-3N attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

25 ns

JESD-30 Code:

R-PDIP-T16

Memory IC Type:

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

50 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4C1050-3N Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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