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TMS4103JC

Texas Instruments

TMS4103JC by Texas Instruments

TMS4103JC by Texas Instruments is a MOS memory circuit IC with 28 terminals in an IN-LINE rectangular ceramic package. It operates b/w -25°C to 85°C, making it suitable for various applications requiring reliable memory storage and retrieval. The terminal pitch of 2.54mm and through-hole design enhance its versatility in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,709 parts In-Stock

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4,709

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Digiode

USA . 245 parts In-Stock

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245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 39 parts In-Stock

1+ parts

$3.286

100+ parts

-

1k+ parts

$3.810

10k+ parts

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39

$3.286

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$3.810

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DigiPath Technology Company

USA . 1,880 parts In-Stock

1+ parts

$3.618

100+ parts

$3.329

1k+ parts

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1,880

$3.618

$3.329

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ChromeModa Solutions

Germany . 4,425 parts In-Stock

1+ parts

$3.692

100+ parts

$3.027

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4,425

$3.692

$3.027

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IDEA Electronic Components Group

UK . 2,038 parts In-Stock

1+ parts

$3.692

100+ parts

-

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$3.323

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2,038

$3.692

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$3.323

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AZTECH Wire

Italy . 466 parts In-Stock

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$14.169

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466

$14.169

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One Stop Electronics

USA . 1,135 parts In-Stock

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$18.000

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1,135

$18.000

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Corphita

USA . 1,865 parts In-Stock

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1,865

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Overview

Upgrade your electronics with the TMS4103JC from Texas Instruments, a leading manufacturer known for their high-quality products. This versatile memory circuit IC is perfect for a wide range of applications, offering reliability and performance that customers can trust. With a package body material of ceramic and a rectangular shape, this IC is designed to withstand temperature extremes from -25 to 85°C. Whether you're designing consumer electronics or industrial equipment, the TMS4103JC delivers the value, benefits, and advantages you need to take your project to the next level.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic material provides excellent thermal and electrical insulation properties, making the product more reliable and durable.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various electronic devices and circuit layouts.

No. of Terminals: 28

Having 28 terminals provides versatility and connectivity options for different types of interfaces and applications.

Package Style (Meter): IN-LINE

In-line package style offers space-saving design and easy installation in compact electronic systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the product can withstand demanding conditions without performance degradation.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature ensures the product can function effectively in a wide range of environments, including extreme cold temperatures.

Terminal Position: DUAL

Dual terminal position allows for improved signal transmission and connectivity reliability.

Technology: MOS

MOS technology offers high speed and low power consumption, making the product efficient and suitable for various memory circuit applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical connections and ease of soldering during assembly.

Terminal Pitch: 2.54 mm

The 2.54mm terminal pitch offers compatibility with standard breadboards and PCB layouts, simplifying prototyping and integration processes.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit IC, this product is designed for storing and retrieving data efficiently, making it ideal for use in various memory-intensive applications.

Technical Specifications

Other Function Memory ICs TMS4103JC attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T28

Memory IC Type:

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP28,.6

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Qualification:

Not Qualified

Sub-Category:

Other Memory ICs

Surface Mount:

NO

Technology:

MOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4103JC Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-14-307-6276, 5962143076276

NIIN

143076276

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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