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TMS44C251-10SD

Texas Instruments

TMS44C251-10SD by Texas Instruments

TMS44C251-10SD by Texas Instruments is a 256KX4 MEMORY CIRCUIT IC with 1048576 bit Memory Density. It operates at 5V, has a Max Access Time of 100ns, and consumes up to 110mA. This CMOS technology chip is used in applications requiring fast memory access and high data storage capacity.

Median Price

$15.930

Lifecycle Status

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25

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Forefront Electronics and Design

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Parana Technologies

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AZTECH Wire

Italy . 814 parts In-Stock

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ChromeModa Solutions

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IDEA Electronic Components Group

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DigiPath Technology Company

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Overview

Upgrade your electronics with the Texas Instruments TMS44C251-10SD, a high-quality memory circuit designed for optimal performance. Manufactured by Texas Instruments, this memory IC offers unmatched reliability and precision in a variety of applications. With a nominal supply voltage of 5V and a maximum access time of 100ns, this memory circuit provides fast and efficient data storage capabilities. Trust Texas Instruments to deliver superior quality and value in every product they create. Elevate your projects with the TMS44C251-10SD today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the memory IC, ensuring longevity and reliability.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with a wide range of systems and makes integration easier.

No. of Terminals: 28

Having 28 terminals allows for versatility in connecting the memory IC to different systems and peripherals.

Maximum Operating Temperature: 70 °C

The high maximum operating temperature of 70°C ensures reliable performance even in demanding environmental conditions.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the memory IC efficient and reliable.

No. of Words: 262144 words

With a large number of words (262144), this memory IC can store and retrieve a significant amount of data efficiently.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit type ensures that the IC is specifically designed for storing and processing data, making it highly reliable for memory applications.

No. of Words Code: 256K

Having a code for 256K words signifies the memory capacity of the IC, making it suitable for applications that require storing a large amount of data.

Technical Specifications

Other Function Memory ICs TMS44C251-10SD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

100 ns

JESD-30 Code:

R-PZIP-T28

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

28

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

ZIP

Package Equivalence Code:

ZIP28,.1

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

110 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS44C251-10SD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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