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TMS4C1050-60SD

Texas Instruments

TMS4C1050-60SD by Texas Instruments

TMS4C1050-60SD by Texas Instruments is a 20-terminal MEMORY CIRCUIT IC with 5V supply, 50ns access time, and 35mA max supply current. It operates b/w 0-70°C in commercial grade applications requiring reliable memory storage solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,358 parts In-Stock

1+ parts

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4,358

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Digiode

USA . 4,262 parts In-Stock

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4,262

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,033 parts In-Stock

1+ parts

$3.902

100+ parts

-

1k+ parts

$4.377

10k+ parts

-

1,033

$3.902

-

$4.377

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One Stop Electronics

USA . 1,045 parts In-Stock

1+ parts

$4.000

100+ parts

-

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1,045

$4.000

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DigiPath Technology Company

USA . 818 parts In-Stock

1+ parts

$4.296

100+ parts

$3.953

1k+ parts

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10k+ parts

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818

$4.296

$3.953

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ChromeModa Solutions

Germany . 3,760 parts In-Stock

1+ parts

$4.384

100+ parts

$3.595

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3,760

$4.384

$3.595

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IDEA Electronic Components Group

UK . 129 parts In-Stock

1+ parts

$4.384

100+ parts

-

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$3.946

10k+ parts

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129

$4.384

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$3.946

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AZTECH Wire

Italy . 536 parts In-Stock

1+ parts

$8.799

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536

$8.799

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Corphita

USA . 2,772 parts In-Stock

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2,772

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Overview

Unlock the power of cutting-edge technology with the TMS4C1050-60SD by Texas Instruments. As a leader in semiconductor manufacturing, Texas Instruments guarantees superior quality and reliability. This Other Function Memory IC is versatile and can be used in a wide range of applications. Experience seamless performance and unmatched efficiency with a nominal supply voltage of 5V and a maximum operating temperature of 70°C. Trust Texas Instruments to deliver innovative solutions that meet your needs and exceed your expectations. Elevate your projects with the TMS4C1050-60SD and unleash endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Nominal Supply Voltage / Vsup (V): 5

The 5V supply voltage ensures compatibility with a wide range of systems and makes it easy to integrate into existing circuits.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature of 70°C, this product is suitable for use in various environments without risk of overheating.

Technology: CMOS

The CMOS technology used in this memory IC results in low power consumption and high noise immunity, making it efficient and reliable.

Maximum Access Time: 50 ns

The fast maximum access time of 50 nanoseconds ensures quick data retrieval, improving overall system performance.

Technical Specifications

Other Function Memory ICs TMS4C1050-60SD attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

50 ns

JESD-30 Code:

R-PZIP-T20

Memory IC Type:

No. of Terminals:

20

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

ZIP

Package Equivalence Code:

ZIP20,.1

Package Shape:

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

35 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

1.27 mm

Terminal Position:

ZIG-ZAG

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS4C1050-60SD Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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