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M36W108B120ZN1

STMicroelectronics

M36W108B120ZN1 by STMicroelectronics

M36W108B120ZN1 from STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with Flash+SRAM technology. It operates asynchronously at voltages b/w 2.7V and 3.6V, with a max access time of 120 ns. Ideal for commercial applications, it supports surface mount in a very thin profile package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,574 parts In-Stock

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3,574

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Anansix

USA . 2,711 parts In-Stock

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2,711

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Vyrian

USA . 2,287 parts In-Stock

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2,287

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,430 parts In-Stock

1+ parts

$3.767

100+ parts

-

1k+ parts

$3.391

10k+ parts

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1,430

$3.767

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$3.391

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MKK Technologies

India . 2,035 parts In-Stock

1+ parts

$7.084

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2,035

$7.084

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DigiPath Technology Company

USA . 2,035 parts In-Stock

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$7.084

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2,035

$7.084

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Corphita

USA . 957 parts In-Stock

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957

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Parana Technologies

USA . 30 parts In-Stock

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$4.504

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30

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$4.504

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Overview

Unlock the potential of your designs with the M36W108B120ZN1 from STMicroelectronics, a leader in innovative memory solutions. This high-quality memory IC combines Flash and SRAM technology, ensuring rapid data access and reliability across diverse applications—from automotive to industrial systems. With its compact, thin-profile package and exceptional temperature range, it offers unmatched performance and versatility, empowering customers to create cutting-edge, efficient products. Elevate your projects with this trusted solution!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

This surface mount capability allows for reduced spacing on printed circuit boards, enhancing design flexibility and optimizing space.

Package Shape: RECTANGULAR

The rectangular shape maximizes the use of board space and simplifies integration into existing layouts.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for straightforward interfacing, enabling faster processing and reduced latency in applications.

Mixed Memory Type: FLASH+SRAM

Combining FLASH and SRAM memory types provides versatility in data storage and retention, catering to a variety of use cases.

Power Supplies (V): 3/3.3

Compatible with common supply voltages, making it easy to integrate into many existing systems without requiring additional voltage regulation.

No. of Terminals: 48

With 48 terminals, this IC provides a robust interface for a wide range of functions, ensuring comprehensive connectivity.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The thin profile grid array design aids in maximizing space efficiency while enhancing thermal performance during operation.

Maximum Operating Temperature: 70 °C

The ability to operate at high temperatures ensures reliability in demanding environments, making it suitable for industrial applications.

Organization: 1MX8

The memory organization of 1MX8 provides significant data storage capability, ideal for applications that require high-performance memory.

Minimum Operating Temperature: 0 °C

A minimum operating temperature of 0 °C allows for usability in a wider range of ambient conditions, enhancing application versatility.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and reliability in electrical connections, beneficial for long-term performance.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier PCB assembly and promotes efficient use of board space.

Maximum Seated Height: 1 mm

A low seated height allows for better air flow and cooling characteristics, making it suitable for high-density applications.

Width: 9.8 mm

A compact width contributes to space-saving designs and easier integration into tight spaces.

Minimum Supply Voltage (Vsup): 2.7 V

Supports a low minimum supply voltage, ensuring flexibility in power supply design and energy efficiency.

Length: 11.8 mm

The moderate length supports various layout configurations, enhancing versatility in circuit board design.

Temperature Grade: COMMERCIAL

Rated for commercial temperature grade, ensuring suitability for standard commercial applications.

Technology: CMOS

Utilizing CMOS technology provides low power consumption and high-speed operation, ideal for modern electronic applications.

Terminal Form: BUTT

The butt terminal form provides a solid and reliable mechanical connection, ensuring long-lasting performance.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA indicates substantial power handling capability, suitable for demanding applications.

No. of Words: 1048576 words

With over a million words available, this IC can handle large data sets, making it ideal for applications that require significant memory capacity.

Memory Width: 8

An 8-bit memory width supports efficient data processing, particularly in applications focused on digital communication.

Terminal Pitch: 1 mm

A 1 mm terminal pitch allows for compact PCB designs without compromising on connection reliability.

No. of Words Code: 1M

The coding provides clear information for developers regarding the memory structure, aiding in system design and implementation.

Maximum Supply Voltage (Vsup): 3.6 V

An upper voltage limit of 3.6 V ensures compatibility with various power supply configurations, providing design flexibility.

Memory Density: 8388608 bit

High memory density allows for accommodating large amounts of data in compact form factor, suitable for memory-intensive applications.

Memory IC Type: MEMORY CIRCUIT

Classified as a memory circuit, this IC supports a wide range of applications, particularly in data storage and retrieval.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current contributes to energy efficiency, making it suitable for battery-operated devices.

Maximum Access Time: 120 ns

A maximum access time of 120 ns ensures fast data retrieval, enhancing overall system performance.

Technical Specifications

Other Function Memory ICs M36W108B120ZN1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

120 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108B120ZN1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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