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SNJ54AS870FH

Texas Instruments

SNJ54AS870FH by Texas Instruments

SNJ54AS870FH by Texas Instruments is a MILITARY-grade TTL IC with 28 terminals in a CHIP CARRIER package. Operating temperature range from -55 to 125 °C, suitable for harsh environments. Ideal for applications requiring high reliability and performance in military and aerospace industries.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,120 parts In-Stock

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5,120

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Digiode

USA . 203 parts In-Stock

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203

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Distributors (Availability)

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One Stop Electronics

USA . 1,056 parts In-Stock

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$3.000

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1,056

$3.000

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Parana Technologies

USA . 439 parts In-Stock

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$3.784

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$4.273

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439

$3.784

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$4.273

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DigiPath Technology Company

USA . 452 parts In-Stock

1+ parts

$4.167

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$3.834

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452

$4.167

$3.834

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ChromeModa Solutions

Germany . 5,706 parts In-Stock

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$4.252

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$3.487

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5,706

$4.252

$3.487

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IDEA Electronic Components Group

UK . 558 parts In-Stock

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$4.252

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$3.827

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558

$4.252

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$3.827

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AZTECH Wire

Italy . 661 parts In-Stock

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$17.625

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661

$17.625

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Corphita

USA . 649 parts In-Stock

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Overview

Experience the superior quality and reliability of Texas Instruments with the SNJ54AS870FH, a high-performance Other Function Memory IC designed for demanding military applications. With a ceramic package body material and no lead terminal form, this chip carrier IC operates seamlessly in extreme temperatures ranging from -55 to 125°C. Ideal for critical mission-critical systems, this TTL technology component offers unmatched value and performance, making it the top choice for aerospace, defense, and industrial customers looking for dependable solutions. Trust Texas Instruments for cutting-edge innovation and unmatched quality.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic package body material provides excellent thermal conductivity and resistance to high temperatures, making it a durable choice for military applications.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and labor costs during production.

Screening Level: 38535Q/M;38534H;883B

Compliance with multiple screening levels ensures high reliability and performance consistency for mission-critical military applications.

Package Shape: SQUARE

Square package shape offers efficient use of PCB real estate and enhances thermal dissipation for improved overall performance.

No. of Terminals: 28

Having a higher number of terminals allows for greater connectivity options and functionality in complex circuit designs.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides compactness and protection for the memory IC, making it suitable for space-constrained military applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance ensures reliability and performance in harsh operating conditions without compromising functionality.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature tolerance allows the memory IC to function reliably in extreme cold environments, enhancing its versatility.

Terminal Position: QUAD

Quad terminal position offers better stability and connectivity, especially in high-vibration environments often encountered in military applications.

Temperature Grade: MILITARY

Military-grade temperature rating ensures the memory IC can withstand rugged environmental conditions and perform reliably in demanding military applications.

Technology: TTL

TTL technology provides fast switching speeds and low power consumption, making the memory IC suitable for high-performance military applications.

Terminal Form: NO LEAD

No lead terminal form complies with environmental regulations, making the memory IC an eco-friendly and sustainable choice for military electronics.

Terminal Pitch: 1.27 mm

Narrow terminal pitch allows for high-density mounting and efficient use of PCB space, offering scalability and flexibility in design options.

Technical Specifications

Other Function Memory ICs SNJ54AS870FH attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-XQCC-N28

No. of Terminals:

28

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

Package Equivalence Code:

LCC28,.45SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Other Memory ICs

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Trade Compliance

SNJ54AS870FH Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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