Loading...

M36W108T100ZN1

STMicroelectronics

M36W108T100ZN1 by STMicroelectronics

M36W108T100ZN1 by STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with FLASH+SRAM technology. It operates asynchronously at voltages b/w 2.7V and 3.6V, with a max access time of 100 ns. Ideal for commercial applications, it supports surface mount in a very thin profile package.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,588

-

-

-

-

Anansix

USA . 1,452 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,452

-

-

-

-

Vyrian

USA . 890 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

890

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 935 parts In-Stock

1+ parts

$5.229

100+ parts

-

1k+ parts

$4.706

10k+ parts

-

935

$5.229

-

$4.706

-

MKK Technologies

India . 2,024 parts In-Stock

1+ parts

$9.833

100+ parts

-

1k+ parts

-

10k+ parts

-

2,024

$9.833

-

-

-

DigiPath Technology Company

USA . 2,024 parts In-Stock

1+ parts

$9.833

100+ parts

-

1k+ parts

-

10k+ parts

-

2,024

$9.833

-

-

-

Corphita

USA . 2,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,018

-

-

-

-

Parana Technologies

USA . 1,986 parts In-Stock

1+ parts

-

100+ parts

$6.252

1k+ parts

-

10k+ parts

-

1,986

-

$6.252

-

-

Overview

Unlock new possibilities with the M36W108T100ZN1 from STMicroelectronics—a fusion of advanced FLASH and SRAM technology in a compact, cutting-edge package. Renowned for their commitment to quality, STMicroelectronics delivers a memory solution that excels in efficiency and performance, ideal for diverse applications ranging from consumer electronics to embedded systems. Experience enhanced reliability and power savings, making your designs more innovative and future-ready!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy enhances durability and protects internal components, making the IC suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact circuit designs and easier assembly, optimizing space on PCBs.

Package Shape: RECTANGULAR

A rectangular package offers efficient use of board space and better placement flexibility in designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation improves performance in systems where timing flexibility is essential, enhancing response times.

Mixed Memory Type: FLASH+SRAM

The combination of flash and SRAM provides both non-volatile storage and fast access, catering to a wide range of applications.

Power Supplies (V): 3/3.3

Compatible power supply levels make the IC versatile for use in various electronic designs.

No. of Terminals: 48

A higher number of terminals allows for more connections, enabling complex functions and interactions in circuits.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The grid array design with a very thin profile facilitates space-saving and efficient thermal management.

Maximum Operating Temperature: 70 °C

A maximum operating temperature of 70 °C makes it suitable for commercial applications that experience moderate heat.

Organization: 1MX8

This organization structure allows for easy data access and manipulation, improving system efficiency.

Minimum Operating Temperature: 0 °C

The minimum operating temperature ensures reliable performance in a range of environments.

Terminal Finish: TIN LEAD

The tin lead finish enhances solderability, ensuring robust connections during assembly.

Terminal Position: BOTTOM

Bottom terminal positioning enables efficient space usage on PCBs and can improve thermal characteristics.

Maximum Seated Height: 1 mm

A low seated height allows this IC to fit into compact designs, making it ideal for slim devices.

Width: 9.8 mm

A width of 9.8 mm strikes a balance between compactness and usability, fitting well in various applications.

Minimum Supply Voltage (Vsup): 2.7 V

Enables operation in low-power environments, benefiting battery-powered devices.

Length: 11.8 mm

The length is ideal for efficient board layout, ensuring connectivity without taking up excessive space.

Temperature Grade: COMMERCIAL

Commercial temperature grading signifies reliability in typical operating conditions, appealing to a wide market.

Technology: CMOS

CMOS technology ensures low power consumption while maintaining high performance, making it ENERGY-EFFICIENT.

Terminal Form: BUTT

Butt form terminals enhance stability and connection integrity in the assembly process.

Maximum Supply Current: 100 mA

A maximum supply current of 100 mA allows for versatile applications without exceeding typical power limits.

No. of Words: 1048576 words

An impressive number of words for storage offers significant data handling capacity for applications.

Memory Width: 8

An 8-bit memory width ensures efficient data handling and compatibility with most microcontrollers.

Terminal Pitch: 1 mm

A 1 mm terminal pitch allows for denser packing of components without sacrificing performance or reliability.

No. of Words Code: 1M

1M words of code capacity makes it suitable for applications requiring substantial data storage.

Maximum Supply Voltage (Vsup): 3.6 V

Supports a standard range of supply voltages, making it compatible with a variety of systems.

Memory Density: 8388608 bit

High memory density enhances data storage capabilities, allowing for larger applications in a compact form.

Memory IC Type: MEMORY CIRCUIT

Being a memory circuit, this IC is suited for tasks requiring efficient data storage and retrieval.

Maximum Standby Current: 0.00002 Amp

Extremely low standby current contributes to energy-saving designs, making it eco-friendly.

Maximum Access Time: 100 ns

A maximum access time of 100 ns provides rapid data retrieval, enhancing system performance.

Technical Specifications

Other Function Memory ICs M36W108T100ZN1 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

100 ns

Additional Features:

ALSO CONTAINS 128K X 8 SRAM

JESD-30 Code:

R-PBGA-B48

JESD-609 Code:

e0

Length:

11.8 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

8

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

48

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

1MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LGA48,6X8,40

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Power Supplies (V):

3/3.3

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Standby Current:

.00002 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

100 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BUTT

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

9.8 mm

Trade Compliance

M36W108T100ZN1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20