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M36W0R6030T0ZAQF

STMicroelectronics

M36W0R6030T0ZAQF by STMicroelectronics

M36W0R6030T0ZAQF by STMicroelectronics is a versatile memory IC featuring 4M x 16 mixed FLASH+SRAM technology, operating at a nominal voltage of 1.8V. It supports asynchronous access with a max temp of 85 °C and is ideal for industrial applications. Its compact design (10mm x 8mm) ensures efficient space utilization in devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 5,291 parts In-Stock

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5,291

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Vyrian

USA . 3,324 parts In-Stock

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3,324

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Anansix

USA . 1,776 parts In-Stock

1+ parts

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1,776

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,110 parts In-Stock

1+ parts

$4.293

100+ parts

-

1k+ parts

$3.863

10k+ parts

-

2,110

$4.293

-

$3.863

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MKK Technologies

India . 407 parts In-Stock

1+ parts

$8.072

100+ parts

-

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407

$8.072

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DigiPath Technology Company

USA . 407 parts In-Stock

1+ parts

$8.072

100+ parts

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407

$8.072

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Parana Technologies

USA . 2,047 parts In-Stock

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100+ parts

$5.133

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2,047

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$5.133

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Corphita

USA . 1,638 parts In-Stock

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1,638

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Overview

Unlock the power of innovation with the M36W0R6030T0ZAQF from STMicroelectronics, a leader in cutting-edge memory solutions. This high-performance mixed memory IC combines the reliability of FLASH and SRAM, perfect for industrial applications where durability matters. With its low power consumption and compact design, you can enhance your devices while reducing energy costs. Elevate your designs with confidence, knowing you're backed by STMicroelectronics' unmatched quality and expertise!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material ensures reliability and longevity in various applications.

Surface Mount: YES

Facilitates compact designs and efficient PCB layout, ideal for modern electronics.

Package Shape: RECTANGULAR

Standard shape allows for easier integration into existing designs.

Operating Mode: ASYNCHRONOUS

Simplifies design as it does not require a clock signal, allowing for easier interfacing.

Mixed Memory Type: FLASH+SRAM

Combines the benefits of both memory types, offering flexibility for diverse applications.

Nominal Supply Voltage / Vsup (V): 1.8

Low voltage operation enhances energy efficiency and reduces power consumption.

Power Supplies (V): 1.8

Single supply voltage simplifies design and integration into power-sensitive applications.

No. of Terminals: 88

Provides ample connections for complex functionalities, allowing for advanced features.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

Optimizes space utilization and enables high-density designs with minimal footprint.

Maximum Operating Temperature: 85 °C

Suitable for industrial environments and applications exposed to higher temperatures.

Organization: 4MX16

Structured organization improves data access efficiency and optimizes performance.

Minimum Operating Temperature: -40 °C

Wide temperature range ensures reliability in harsh conditions, making it versatile.

Terminal Finish: TIN SILVER COPPER

Provides excellent conductivity and resistance to corrosion, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easier soldering and PCB layout, enhancing assembly efficiency.

Maximum Seated Height: 1.2 mm

Low profile design allows for compact placement in tight spaces.

Width: 8 mm

Compact width maximizes space efficiency on the PCB.

Minimum Supply Voltage (Vsup): 1.7 V

Allows for operation even with slightly lower supply voltages, improving flexibility.

Length: 10 mm

Compact length supports space-efficient design in electronic devices.

Temperature Grade: INDUSTRIAL

Designed for rugged applications, ensuring reliable operation in demanding environments.

Technology: CMOS

Low power consumption and high-speed operation make it ideal for modern applications.

Terminal Form: BALL

Ball form enables efficient surface mounting and simplifies assembly processes.

Maximum Supply Current: 45 mA

The efficient current levels contribute to lower overall power consumption.

No. of Words: 4194304 words

Large memory capacity suitable for data-intensive applications.

Memory Width: 16

Supports higher data throughput, enhancing overall system performance.

Terminal Pitch: 0.8 mm

Enables higher density layouts, suitable for modern compact designs.

No. of Words Code: 4M

Efficient data organization supports quick access and processing.

Maximum Supply Voltage (Vsup): 1.95 V

Ensures compatibility with a range of applications that utilize various power levels.

Memory Density: 67108864 bit

High density allows storage of substantial amounts of data, valuable for intensive applications.

Memory IC Type: MEMORY CIRCUIT

Designed specifically for memory applications, ensuring optimal performance.

Maximum Standby Current: 0.00001 Amp

Extremely low standby current improves energy efficiency in battery-powered devices.

Maximum Access Time: 70 ns

Fast access time enhances overall system responsiveness and performance.

Technical Specifications

Other Function Memory ICs M36W0R6030T0ZAQF attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 512K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

67108864 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

4194304 words

No. of Words Code:

4M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

4MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00001 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R6030T0ZAQF Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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