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M36W0R5020B0ZAQE

STMicroelectronics

M36W0R5020B0ZAQE by STMicroelectronics

M36W0R5020B0ZAQE by STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design ensures efficient space utilization in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,934 parts In-Stock

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1,934

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Anansix

USA . 1,386 parts In-Stock

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1,386

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Digiode

USA . 1,072 parts In-Stock

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1,072

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 760 parts In-Stock

1+ parts

$2.921

100+ parts

-

1k+ parts

$2.629

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760

$2.921

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$2.629

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MKK Technologies

India . 1,731 parts In-Stock

1+ parts

$5.493

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1,731

$5.493

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DigiPath Technology Company

USA . 1,731 parts In-Stock

1+ parts

$5.493

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1,731

$5.493

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Parana Technologies

USA . 625 parts In-Stock

1+ parts

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$3.492

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625

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$3.492

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Corphita

USA . 342 parts In-Stock

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342

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Overview

Unlock unparalleled performance with the M36W0R5020B0ZAQE from STMicroelectronics. Renowned for their commitment to quality and innovation, STMicroelectronics delivers this cutting-edge memory IC designed for diverse applications where speed and reliability are paramount. With a robust design that ensures efficiency in extreme conditions, this product perfectly balances FLASH and SRAM capabilities, providing exceptional value that enhances your systems while optimizing power usage. Experience superior functionality and elevate your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy ensures reliability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Being surface mount compatible allows for compact designs and efficient assembly in modern electronic devices.

Package Shape: RECTANGULAR

The rectangular shape assists in efficient space utilization on PCBs, enabling more compact product designs.

Operating Mode: ASYNCHRONOUS

An asynchronous operating mode provides flexibility in interfacing with various components, simplifying design complexity.

Mixed Memory Type: FLASH+SRAM

The combination of flash and SRAM memory types provides both high-speed performance and reliable storage, meeting diverse application needs.

Nominal Supply Voltage / Vsup: 1.8 V

Operating at a low voltage minimizes power consumption and heat generation, making it ideal for battery-powered devices.

Power Supplies (V): 1.8

Support for a uniform power supply voltage of 1.8V enhances compatibility with various low-power applications.

No. of Terminals: 88

A higher number of terminals enables more connections, facilitating versatile interfacing options in complex designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

The thin profile and fine pitch of the grid array design saves space, enabling high-density layouts in modern compact devices.

Maximum Operating Temperature: 85 °C

With a high operating temperature range, this device is suitable for use in industrial environments, enhancing its reliability.

Organization: 2MX16

The specific organization of the memory structure optimizes data access and retrieval, improving overall system performance.

Minimum Operating Temperature: -40 °C

The ability to function in extreme low temperatures ensures the product is reliable in harsh environments.

Terminal Finish: TIN SILVER COPPER

The advanced terminal finish promotes better conductivity and corrosion resistance, enhancing performance and longevity.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates easier mounting on PCBs, enabling efficient use in designs with limited space.

Maximum Seated Height: 1.2 mm

A low seated height promotes better integration into flat devices, contributing to slimmer product designs.

Width: 8 mm

At 8 mm wide, this product is compact enough for tight spaces while providing ample functionality.

Minimum Supply Voltage (Vsup): 1.7 V

The lower limit of the supply voltage enhances flexibility in power supply designs, accommodating a range of voltage sources.

Length: 10 mm

With a length of just 10 mm, this product enables space-efficient layouts in modern electronic applications.

Temperature Grade: INDUSTRIAL

Rated for industrial use, this product ensures robust performance in demanding operational environments.

Technology: CMOS

Utilizing CMOS technology allows for lower power consumption and higher speed, contributing to overall system efficiency.

Terminal Form: BALL

Ball terminal form provides good mechanical and electrical connections, ensuring stability and reliability in operation.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA balances performance with power efficiency, suitable for various applications.

No. of Words: 2,097,152 words

With over 2 million words available, this memory IC provides substantial storage capacity for large data sets.

Memory Width: 16

A memory width of 16 bits allows for efficient data processing, improving system performance.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch is a standard in many modern devices, enhancing compatibility with existing designs.

No. of Words Code: 2M

This memory IC is easily recognizable with a 2M word code, simplifying identification and specification in designs.

Maximum Supply Voltage (Vsup): 1.95 V

A maximum supply voltage of 1.95 V allows the product to operate effectively within a range of power supply conditions.

Memory Density: 33,554,432 bit

High memory density allows for significant data storage capabilities, supporting complex and data-heavy applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is designed specifically for reliable and efficient data storage and retrieval.

Maximum Standby Current: 0.00005 Amp

A very low standby current ensures minimal power consumption when idle, enhancing battery life in portable applications.

Maximum Access Time: 70 ns

A maximum access time of 70 ns aids in fast data retrieval, improving the performance of applications requiring quick responses.

Technical Specifications

Other Function Memory ICs M36W0R5020B0ZAQE attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e1

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R5020B0ZAQE Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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