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M36W0R5020B0ZAQ

STMicroelectronics

M36W0R5020B0ZAQ by STMicroelectronics

M36W0R5020B0ZAQ from STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM, operating at 1.8V with a max temp of 85 °C. Its compact design (10x8mm) and asynchronous mode make it ideal for industrial applications. With low power consumption and fast access times (70ns), it's perfect for efficient data storage solutions.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,236 parts In-Stock

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4,236

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Anansix

USA . 1,888 parts In-Stock

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1,888

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Digiode

USA . 1,222 parts In-Stock

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1,222

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,309 parts In-Stock

1+ parts

$3.444

100+ parts

-

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$3.100

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1,309

$3.444

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$3.100

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MKK Technologies

India . 660 parts In-Stock

1+ parts

$6.477

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660

$6.477

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DigiPath Technology Company

USA . 660 parts In-Stock

1+ parts

$6.477

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660

$6.477

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Corphita

USA . 2,539 parts In-Stock

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2,539

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Parana Technologies

USA . 799 parts In-Stock

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$4.118

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799

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$4.118

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Overview

Unlock unparalleled performance with the M36W0R5020B0ZAQ from STMicroelectronics, a leader in innovative memory solutions. Designed for robustness and efficiency, this hybrid FLASH+SRAM memory IC is perfect for a wide range of industrial applications, delivering reliability in demanding environments. Experience low power consumption and high-speed access, ensuring your devices run smoothly while maximizing energy savings. Elevate your projects with ST's commitment to quality and excellence—your trusted partner in advanced technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection against environmental factors, making it suitable for various applications.

Surface Mount: YES

Surface mount technology provides a compact design and easier integration into modern electronic devices, enabling space-saving solutions.

Package Shape: RECTANGULAR

Rectangular packages allow efficient board layout and optimal space utilization in circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simpler design and faster data retrieval, making it a reliable choice for high-performance applications.

Mixed Memory Type: FLASH+SRAM

The combination of Flash and SRAM technologies offers flexibility in memory management, enhancing performance for various applications.

Nominal Supply Voltage / Vsup: 1.8 V

Low supply voltage of 1.8 V reduces power consumption, making it suitable for energy-efficient devices.

Power Supplies (V): 1.8

Operating at a consistent 1.8 V helps in circuit stability and compatibility with low-voltage devices.

No. of Terminals: 88

A high number of terminals allows for increased connectivity and functionality, facilitating complex designs.

Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH

This package style enables high-density mounting for modern applications, maximizing performance in limited spaces.

Maximum Operating Temperature: 85 °C

Rated for high temperature operation, this IC is suitable for industrial applications where durability is key.

Organization: 2MX16

The 2Mx16 organization allows efficient data handling and optimal data structure for various memory applications.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40 °C, this product is ideal for extreme environmental conditions.

Terminal Finish: TIN LEAD

TIN LEAD terminal finish ensures excellent solderability and long-term reliability in electrical connections.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates low-profile designs and better thermal management in compact environments.

Maximum Seated Height: 1.2 mm

A low seated height enables compatibility with thin profiles and space-constrained applications.

Width: 8 mm

A width of 8 mm strikes a balance between space efficiency and performance, fitting well in tight layouts.

Minimum Supply Voltage (Vsup): 1.7 V

Operates effectively at a minimum of 1.7 V, providing flexibility in various low-power applications.

Length: 10 mm

The 10 mm length aids in versatile mounting options and integration into various board designs.

Temperature Grade: INDUSTRIAL

Rated for industrial applications, ensuring durability and performance in harsh environments.

Technology: CMOS

CMOS technology offers low power consumption and high-performance capabilities, making it a preferred choice in modern ICs.

Terminal Form: BALL

Ball terminal form facilitates easy surface mounting and provides reliable electrical connections.

Maximum Supply Current: 45 mA

A maximum supply current of 45 mA ensures adequate power for high-speed operation while maintaining efficiency.

No. of Words: 2097152 words

A substantial word count of 2,097,152 allows for extensive data storage, catering to demanding applications.

Memory Width: 16

With a memory width of 16, the IC is capable of handling larger data sizes, enhancing system performance.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8 mm allows for high-density arrangements, suitable for advanced electronic devices.

No. of Words Code: 2M

Supports 2M words, making it suitable for applications that require large capacity while maintaining compact size.

Maximum Supply Voltage (Vsup): 1.95 V

The maximum supply voltage of 1.95 V provides operational headroom while ensuring energy efficiency.

Memory Density: 33554432 bit

A high memory density of 33,554,432 bits enables intricate data processing and storage required in modern applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, it is optimized for data storage and retrieval, suitable for diverse applications.

Maximum Standby Current: 0.00005 Amp

A very low standby current ensures minimal power consumption in idle states, enhancing energy efficiency.

Maximum Access Time: 70 ns

A maximum access time of 70 ns results in quick data retrieval, making it ideal for high-speed applications.

Technical Specifications

Other Function Memory ICs M36W0R5020B0ZAQ attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

SRAM IS ORGANIZED AS 256K X 16

JESD-30 Code:

R-PBGA-B88

JESD-609 Code:

e0

Length:

10 mm

Memory Density:

33554432 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

FLASH+SRAM

No. of Functions:

1

No. of Terminals:

88

No. of Words:

2097152 words

No. of Words Code:

2M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

2MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA88,8X12,32

Package Shape:

Package Style (Meter):

GRID ARRAY, THIN PROFILE, FINE PITCH

Power Supplies (V):

1.8

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Maximum Standby Current:

.00005 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

45 mA

Maximum Supply Voltage (Vsup):

1.95 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W0R5020B0ZAQ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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