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TMS44C250-12DZ

Texas Instruments

TMS44C250-12DZ by Texas Instruments

TMS44C250-12DZ by Texas Instruments is a 256KX4 MEMORY CIRCUIT IC with 1048576 bit Memory Density. It operates at 5V, has a Max Access Time of 120ns, and supports Commercial Temperature Grade. This SMALL OUTLINE package is ideal for applications requiring fast memory access in commercial-grade electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,044 parts In-Stock

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7,044

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Digiode

USA . 1,206 parts In-Stock

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1,206

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 708 parts In-Stock

1+ parts

$4.752

100+ parts

-

1k+ parts

$5.255

10k+ parts

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708

$4.752

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$5.255

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DigiPath Technology Company

USA . 1,640 parts In-Stock

1+ parts

$5.232

100+ parts

$4.814

1k+ parts

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1,640

$5.232

$4.814

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IDEA Electronic Components Group

UK . 1,075 parts In-Stock

1+ parts

$5.339

100+ parts

-

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$4.805

10k+ parts

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1,075

$5.339

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$4.805

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ChromeModa Solutions

Germany . 650 parts In-Stock

1+ parts

$5.339

100+ parts

$4.378

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650

$5.339

$4.378

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One Stop Electronics

USA . 252 parts In-Stock

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$8.000

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252

$8.000

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AZTECH Wire

Italy . 811 parts In-Stock

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$16.598

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811

$16.598

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Corphita

USA . 4,629 parts In-Stock

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4,629

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Overview

Unlock the power of cutting-edge technology with the TMS44C250-12DZ by Texas Instruments. This memory IC offers unmatched reliability and performance, thanks to its top-notch manufacturing standards. Ideal for a wide range of applications, this product provides seamless integration and superior functionality. Experience the value and benefits of Texas Instruments' innovative solutions with the TMS44C250-12DZ. Elevate your projects to new heights with this exceptional memory circuit.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and reliability for the memory IC, making it a good choice for various applications.

Surface Mount: YES

Surface mount capability allows for easy installation and space-saving design, making it suitable for compact electronic devices.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with standard power sources, offering versatile usage in different systems.

Maximum Operating Temperature: 70 °C

With a maximum operating temperature of 70°C, it can perform reliably even under moderate heat conditions.

Technology: CMOS

CMOS technology ensures low power consumption and high speed performance, making it energy-efficient and fast for memory operations.

Memory Density: 1048576 bit

High memory density of 1048576 bits allows for storing a large amount of data in a compact IC, enabling efficient data storage and processing.

Maximum Access Time: 120 ns

Fast maximum access time of 120 nanoseconds ensures quick retrieval of data, enhancing the overall performance of the memory IC in applications.

Technical Specifications

Other Function Memory ICs TMS44C250-12DZ attributes and parameters. Explore more Other Function Memory ICs devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

JESD-30 Code:

R-PDSO-J28

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

4

No. of Terminals:

28

No. of Words:

262144 words

No. of Words Code:

256K

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

256KX4

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOJ

Package Equivalence Code:

SOJ28,.44

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Standby Current:

.01 Amp

Sub-Category:

Other Memory ICs

Maximum Supply Current:

95 mA

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TMS44C250-12DZ Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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