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AT29C1024

Microchip Technology

AT29C1024 by Microchip Technology

AT29C1024 by Microchip Technology is a 64KX16 EPROM+FLASH memory IC with 70 ns access time. Operating at 5V, it offers 1048576 bits of memory density and is suitable for applications requiring asynchronous operation in surface-mount configurations.

Median Price

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Lifecycle Status

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5

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< 1k

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Vyrian

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Digiode

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VNN

France . 58 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Prism Electronics

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Corohmni

South Africa . 1,168 parts In-Stock

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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Ampacity Inc.

Singapore . 520 parts In-Stock

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Andel Nordic

Denmark . 3,974 parts In-Stock

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RGB Technical Solutions

Ukraine . 6,526 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Supply Digital

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Aranea Global

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Corphita

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Overview

Unlock the power of reliable and high-quality memory solutions with the AT29C1024 by Microchip Technology. Designed for seamless integration in a variety of applications, this memory IC offers unmatched value and performance. Whether you're looking to enhance your system's functionality or improve its efficiency, the AT29C1024 delivers on both fronts. Trust in Microchip's reputation for excellence and experience the benefits firsthand. Elevate your projects with the AT29C1024 today.

Feature Benefit Bullets

Surface Mount: YES

Surface mount technology allows for easy and reliable installation on circuit boards, making the product suitable for compact and densely populated electronic devices.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides flexibility in timing and allows for independent access to memory locations, enhancing overall system performance.

Mixed Memory Type: EPROM+FLASH

Combining EPROM and FLASH memory types allows for both non-volatile storage of data and reprogrammable capabilities, providing versatility in application.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard voltage levels in electronic systems, simplifying integration.

No. of Terminals: 44

Having 44 terminals enables robust connectivity and signal routing, facilitating data exchange between the memory IC and other components in the system.

Organization: 64KX16

Organized as 64K words by 16 bits, the memory IC offers a balance between storage capacity and data width, catering to various memory requirements of applications.

Terminal Position: QUAD

Quad terminal positioning provides a stable connection interface and efficient layout design, optimizing space utilization on the circuit board.

Minimum Supply Voltage (Vsup): 4.5 V

With a minimum supply voltage of 4.5V, the memory IC operates reliably even under slightly lower voltage conditions, ensuring stability in power-sensitive environments.

Technology: CMOS

Utilizing CMOS technology offers low power consumption, high noise immunity, and wide operating voltage range, enhancing the efficiency and performance of the memory IC.

No. of Words: 65536 words

Having a large number of words allows for substantial data storage capacity, accommodating extensive information processing and retrieval in the system.

Memory Width: 16

With a memory width of 16 bits, the memory IC can handle data in larger chunks, improving data transfer rates and enhancing overall system throughput.

No. of Words Code: 64K

The code space of 64K words provides ample memory allocation for program storage, enabling complex algorithms and applications to be executed efficiently.

Maximum Supply Voltage (Vsup): 5.5 V

Operating within a maximum supply voltage of 5.5V ensures safe voltage handling and protection against overvoltage conditions, safeguarding the memory IC from potential damage.

Memory Density: 1048576 bit

With a high memory density of 1048576 bits, the memory IC offers substantial data storage capacity in a compact form factor, supporting diverse application requirements.

Memory IC Type: MEMORY CIRCUIT

Being a dedicated memory circuit, the IC is designed specifically for efficient data storage and retrieval, ensuring reliable performance and compatibility with memory-intensive tasks.

Maximum Access Time: 70 ns

Having a fast maximum access time of 70ns enables quick data retrieval and processing, enhancing system responsiveness and performance in time-critical applications.

Technical Specifications

Other Function Memory ICs AT29C1024 attributes and parameters. Explore more Other Function Memory ICs devices from Microchip Technology

Specs

Maximum Access Time:

70 ns

JESD-30 Code:

X-XQCC-X44

Memory Density:

1048576 bit

Memory IC Type:

Memory Width:

16

Mixed Memory Type:

EPROM+FLASH

No. of Functions:

1

No. of Terminals:

44

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Organization:

64KX16

Package Body Material:

UNSPECIFIED

Package Shape:

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

UNSPECIFIED

Terminal Position:

QUAD

Trade Compliance

AT29C1024 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

NSN

5962-01-456-4584, 5962014564584

NIIN

014564584

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

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Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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