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M36W216B100ZA6

STMicroelectronics

M36W216B100ZA6 by STMicroelectronics

M36W216B100ZA6 from STMicroelectronics is a low-profile, asynchronous memory IC with a 16-bit width and a density of 16Mbit. It operates b/w -40 °C to 85 °C, making it ideal for industrial applications. This surface-mount device features a compact design with 66 terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,403 parts In-Stock

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Digiode

USA . 2,831 parts In-Stock

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Anansix

USA . 732 parts In-Stock

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732

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IDEA Electronic Components Group

UK . 1,924 parts In-Stock

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$5.508

100+ parts

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$4.957

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MKK Technologies

India . 2,318 parts In-Stock

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$10.358

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DigiPath Technology Company

USA . 2,318 parts In-Stock

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$10.358

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$10.358

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Corphita

USA . 2,633 parts In-Stock

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Parana Technologies

USA . 1,260 parts In-Stock

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$6.586

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$6.586

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Overview

Unlock the potential of your designs with the M36W216B100ZA6 from STMicroelectronics, a leader in innovative memory solutions. This high-performance memory IC delivers reliable data storage for industrial applications, ensuring exceptional durability even in extreme temperatures. With a low-profile design and easy surface mount capability, it streamlines integration into your projects while enhancing overall efficiency. Trust STMicroelectronics for quality that elevates your technology to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and reliability, making this memory IC suitable for various applications.

Surface Mount: YES

Surface mount technology allows for compact design and efficient use of space on PCBs, ideal for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape is easy to handle and facilitates efficient layout in circuit designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation allows for simple control and integration into systems without complex timing requirements.

Nominal Supply Voltage / Vsup: 3V

The nominal supply voltage of 3V ensures compatibility with many low-power applications, promoting energy efficiency.

No. of Terminals: 66

With 66 terminals, this IC provides flexibility in connectivity and can support advanced functionalities.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The low profile and fine pitch grid array style allows for high-density assembly, making it ideal for space-constrained designs.

Maximum Operating Temperature: 85 °C

Operating at up to 85 °C makes this IC suitable for industrial applications where higher temperature resilience is required.

Organization: 1MX16

The 1M x 16 organization provides a good balance of memory width and depth, suitable for various data storage applications.

Minimum Operating Temperature: -40 °C

The capability to operate at -40 °C enhances reliability in extreme environments, making it perfect for industrial applications.

Terminal Position: BOTTOM

Bottom-terminated ICs are generally easier to mount in compact designs, aiding in efficient thermal management.

Maximum Seated Height: 1.4 mm

The low seated height enables effective use in low-profile devices without sacrificing performance.

Width: 8 mm

A width of 8 mm allows for easy integration into various applications, supporting a diverse range of designs.

Minimum Supply Voltage: 2.7V

The minimum supply voltage of 2.7V allows for operation in a wide range of low-voltage systems, enhancing design flexibility.

Length: 12 mm

At 12 mm long, this memory IC is compact enough to fit into tight spaces, offering excellent versatility.

Temperature Grade: INDUSTRIAL

Rated for industrial temperature grades, this IC provides enhanced reliability for harsh operational environments.

Technology: CMOS

Utilizing CMOS technology leads to lower power consumption and high performance, making it suitable for modern applications.

Terminal Form: BALL

Ball terminals facilitate reliable connections and are commonly used in surface mount applications, ensuring better performance.

No. of Words: 1048576 words

With 1,048,576 words, this IC offers substantial data storage capacity, suitable for demanding applications.

Memory Width: 16

A memory width of 16 bits is optimal for many applications, balancing performance and storage efficiency.

Terminal Pitch: 0.8 mm

A 0.8 mm terminal pitch provides a compact layout while still allowing for ease of soldering and assembly.

No. of Words Code: 1M

Offering 1M words, this IC supports high-capacity data storage needs, meeting modern memory demands.

Maximum Supply Voltage: 3.3V

The support for a maximum supply voltage of 3.3V makes it versatile for both low and slightly higher power applications.

Memory Density: 16777216 bit

With a memory density of 16,777,216 bits, this IC provides ample storage for complex applications.

Memory IC Type: MEMORY CIRCUIT

As a dedicated memory circuit, this product is optimized for high performance, making it an excellent choice for demanding electronic systems.

Technical Specifications

Other Function Memory ICs M36W216B100ZA6 attributes and parameters. Explore more Other Function Memory ICs devices from STMicroelectronics

Specs

Additional Features:

ALSO CONTAINS 128K X 16 SRAM

JESD-30 Code:

R-PBGA-B66

Length:

12 mm

Memory Density:

16777216 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Terminals:

66

No. of Words:

1048576 words

No. of Words Code:

1M

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

1MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.4 mm

Maximum Supply Voltage (Vsup):

3.3 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

BALL

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

M36W216B100ZA6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.71

SB

8542.32.00.70

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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