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MBRA160T3G

Onsemi

MBRA160T3G by Onsemi

MBRA160T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.51V. It operates b/w -55 to 150°C, has a reverse test voltage of 60V, and is ideal for power applications due to its high efficiency and small outline package style.

Median Price

$0.192

Lifecycle Status

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1k+

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Newark

USA . 25,897 parts In-Stock

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$0.078

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$0.078

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DigiKey

USA . 15,873 parts In-Stock

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$0.600

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$0.234

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$0.157

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$0.106

15,873

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$0.234

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$0.106

Mouser Electronics

USA . 3,286 parts In-Stock

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$0.600

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$0.234

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$0.142

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3,286

$0.600

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Future Electronics

Canada . 260,000 parts In-Stock

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Arrow

USA . 110,000 parts In-Stock

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Verical

USA . 110,000 parts In-Stock

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Element14

Singapore . 72,848 parts In-Stock

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$0.315

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$0.197

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72,848

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Farnell

UK . 50,166 parts In-Stock

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$0.192

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Master Electronics

USA . 19,750 parts In-Stock

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RS (Exports)

UK . 10,180 parts In-Stock

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$0.391

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$0.313

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Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Chip1Stop

Japan . 3,765 parts In-Stock

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TEDSS.com

USA . 250 parts In-Stock

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Digiode

USA . 1,733 parts In-Stock

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IBS Electronics

USA . 1,719,750 parts In-Stock

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Nova Conductors

Japan . 57 parts In-Stock

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Maritex

Poland . 220 parts In-Stock

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$0.083

TME

Poland . 11,787 parts In-Stock

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$0.126

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$0.090

Bristol Electronics

USA . 3,577 parts In-Stock

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$0.464

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NAC Semi

USA . 510,000 parts In-Stock

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Chip Stock

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LIBRA Elektronik GmbH

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Electro Sonic

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Cyclops Electronics Ltd

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Atlantic Semiconductor

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Resion

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Aztec Data Supply Inc.

USA . 1,397 parts In-Stock

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$0.060

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Ampacity Inc.

Singapore . 75,039 parts In-Stock

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Decca Corp

Germany . 63,879 parts In-Stock

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Semicontronic

India . 63,657 parts In-Stock

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Corohmni

South Africa . 344 parts In-Stock

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Corphita

USA . 1,197 parts In-Stock

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Modulus Dynamics

Lithuania . 27,866 parts In-Stock

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Argo Parts USA

USA . 1,405 parts In-Stock

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Continental Prestige Electronics

USA . 768 parts In-Stock

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Bastille Electronics

Australia . 100 parts In-Stock

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$0.157

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Benley Electronics

USA . 88 parts In-Stock

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Perfect Parts

USA . 2,609,510 parts In-Stock

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Brazil . 34,326 parts In-Stock

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Lucentia Tech

USA . 34,326 parts In-Stock

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iodParts Technologies Inc.

India . 16,260 parts In-Stock

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Kepictronics

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TANS Electronics

Latvia . 7,822 parts In-Stock

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XScomponents

USA . 6,643 parts In-Stock

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Problanco Electronics

Mexico . 5,655 parts In-Stock

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SupplyDigital Components

Austria . 5,217 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

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Germany . 3,000 parts In-Stock

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RC Electronics

USA . 2,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,352 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 905 parts In-Stock

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 726 parts In-Stock

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Overview

Discover the power of the MBRA160T3G by Onsemi, a high-quality diode & rectifier that delivers exceptional performance in power applications. Manufactured by Onsemi, a trusted name in the industry, this product offers reliability and efficiency like no other. Ideal for a wide range of power applications, this rectifier diode features a Schottky technology that ensures seamless operation. With a maximum output current of 1A and a low forward voltage of 0.51V, the MBRA160T3G provides customers with value, benefits, and advantages that are unmatched. Upgrade your power systems with the MBRA160T3G by Onsemi today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this diode durable and resistant to environmental factors.

Config: SINGLE

The single configuration of this diode simplifies its installation and ensures easy integration into various power applications.

Surface Mount: YES

With surface mount capability, this diode can be easily mounted on PCBs, saving space and simplifying assembly processes.

Maximum Reverse Current: 200 uA

The low maximum reverse current of 200 uA ensures efficient operation and minimal power loss in reverse bias conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and secure mounting in power electronic circuits.

No. of Terminals: 2

With only 2 terminals, this diode is easy to connect and ensures a simple electrical setup.

Package Style: SMALL OUTLINE

The small outline package style saves space and allows for high-density mounting of multiple diodes in a limited circuit area.

Application: POWER

Designed for power applications, this diode can handle high currents and voltages effectively.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this diode can withstand high temperatures without degradation in performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C ensures reliable operation in cold environments.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit design and easy connection to external components.

Maximum Time At Peak Reflow Temperature (s): 30

This diode can withstand peak reflow temperatures for up to 30 seconds, making it suitable for automated soldering processes.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable solder joints and secure connections during assembly.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is ideal for converting alternating current into direct current with low forward voltage drop.

Maximum Forward Voltage (VF): 0.51 V

The low maximum forward voltage of 0.51 V results in minimal power loss and efficient operation in forward bias conditions.

Maximum Output Current: 1 A

With a maximum output current of 1 A, this diode can handle moderate power loads in various applications.

Technology: SCHOTTKY

Utilizing Schottky technology, this diode offers fast switching speeds and low voltage drop for high efficiency in power conversion.

Terminal Form: J BEND

The J bend terminal form allows for easy mounting and secure solder connections in circuit assembly.

Maximum Repetitive Peak Reverse Voltage: 60 V

The high maximum repetitive peak reverse voltage of 60 V ensures reliable performance in reverse bias conditions.

Maximum Non-Repetitive Peak Forward Current: 60 A

With a maximum non-repetitive peak forward current of 60 A, this diode can handle short-duration high-power pulses without damage.

Diode Element Material: SILICON

The silicon diode element material provides high conductivity, low leakage, and reliable performance for power applications.

Technical Specifications

Diodes & Rectifiers MBRA160T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.51 V

JESD-30 Code:

R-PDSO-J2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

200 uA

Reverse Test Voltage:

60 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA160T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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