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MBRAF360T3G

Onsemi

MBRAF360T3G by Onsemi

MBRAF360T3G by Onsemi is a Schottky rectifier diode with a max output current of 4A and forward voltage of 0.74V. It operates in temperatures ranging from -65°C to 150°C, making it suitable for power applications. This single-configured diode comes in a small outline package with matte tin terminals for surface mounting.

Median Price

$1.000

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 105,000 parts In-Stock

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Nova Conductors

Japan . 53 parts In-Stock

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USA . 105,000 parts In-Stock

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Chip Stock

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Vyrian

USA . 37,944 parts In-Stock

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Pegasus Components GmbH

Germany . 10,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,535 parts In-Stock

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Digiode

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Martec Srl

Italy . 30 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,786 parts In-Stock

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$0.020

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$0.020

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Argo Parts USA

USA . 3,957 parts In-Stock

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$0.211

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$0.205

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Continental Prestige Electronics

USA . 1,724 parts In-Stock

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$0.211

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$0.207

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Ampacity Inc.

Singapore . 54,881 parts In-Stock

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$0.800

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$0.800

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Semicontronic

India . 54,675 parts In-Stock

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$0.800

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$0.780

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$0.776

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Corohmni

South Africa . 250 parts In-Stock

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$0.940

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Netroflash

USA . 50 parts In-Stock

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$1.000

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$0.950

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$0.930

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Andel Nordic

Denmark . 1,893 parts In-Stock

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$3.016

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$2.895

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$2.895

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$2.895

Kepictronics

USA . 45,880 parts In-Stock

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Robosynatics

Brazil . 17,098 parts In-Stock

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Lucentia Tech

USA . 17,098 parts In-Stock

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$0.079

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$0.078

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$0.078

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Perfect Parts

USA . 14,952 parts In-Stock

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Lixinc

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Problanco Electronics

Mexico . 7,664 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 3,352 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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TANS Electronics

Latvia . 1,646 parts In-Stock

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Kulean Microsystems

USA . 950 parts In-Stock

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UHIMA Technologies

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Microchip USA

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Overview

Discover the MBRAF360T3G by Onsemi, a top-quality Schottky rectifier diode that offers unparalleled performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for power applications thanks to its maximum output current of 4A and maximum repetitive peak reverse voltage of 60V. With a small outline package style and dual terminals, this diode is easy to install and use. Whether you're working on a DIY project or a professional application, the MBRAF360T3G provides exceptional value and benefits, making it a must-have component for any electronics enthusiast.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product suitable for a wide range of applications.

Surface Mount: YES

Allows for easy installation on circuit boards, saving time and effort during manufacturing.

Maximum Reverse Current: 150 uA

Low reverse current ensures efficient performance and prevents overheating of the diode.

Application: POWER

Designed for power applications, making it ideal for use in various electronic devices and systems.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, offering reliability in demanding operating conditions.

Maximum Forward Voltage (VF): 0.74 V

Low forward voltage drop ensures minimal power loss and high efficiency in power delivery.

Maximum Output Current: 4 A

Capable of handling high output currents, making it suitable for power applications.

Technology: SCHOTTKY

Schottky diodes have fast switching speeds and low forward voltage drop, ideal for high-frequency applications.

Technical Specifications

Diodes & Rectifiers MBRAF360T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.74 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

125 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

150 uA

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRAF360T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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