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MBRA2H100T3G

Onsemi

MBRA2H100T3G by Onsemi

MBRA2H100T3G by Onsemi is a Schottky rectifier diode with a max output current of 2A and forward voltage of 0.79V. It operates b/w -65 to 175°C, has a reverse test voltage of 100V, and is ideal for power applications due to its small outline package style.

Median Price

$0.654

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,760 parts In-Stock

1+ parts

$1.010

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$0.655

1k+ parts

$0.450

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3,760

$1.010

$0.655

$0.450

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Mouser Electronics

USA . 1,989 parts In-Stock

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$1.630

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$0.687

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$1.630

$0.687

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DigiKey

USA . 13,083 parts In-Stock

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$0.356

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$0.356

Farnell

UK . 9,485 parts In-Stock

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$0.386

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$0.386

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Element14

Singapore . 6,466 parts In-Stock

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$0.921

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$0.614

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$0.546

6,466

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$0.921

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$0.546

Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Verical

USA . 5,000 parts In-Stock

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$0.363

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$0.363

Distributors (In-Stock)

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DF Sales Co.

USA . 300 parts In-Stock

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$0.300

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$0.300

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DF Sales Co.

USA . 300 parts In-Stock

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$0.300

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Nova Conductors

Japan . 650 parts In-Stock

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$0.479

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$0.479

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Digiode

USA . 1,166 parts In-Stock

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$0.902

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Bristol Electronics

USA . 25 parts In-Stock

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$1.125

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$0.450

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Chip Stock

USA . 44,834 parts In-Stock

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Diverse Electronics

Canada . 20,000 parts In-Stock

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Vyrian

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Sunrise Surplus Inc.

USA . 2,463 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,414 parts In-Stock

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Elcom Components

USA . 250 parts In-Stock

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Microfarads

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Distributors (Availability)

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.170

100+ parts

$0.161

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$0.161

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20

$0.170

$0.161

$0.161

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Aztec Data Supply Inc.

USA . 3,168 parts In-Stock

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$0.180

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$0.180

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Corohmni

South Africa . 129 parts In-Stock

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$0.300

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Semicontronic

India . 8,936 parts In-Stock

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$0.318

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$0.310

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$0.308

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8,936

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Ampacity Inc.

Singapore . 8,908 parts In-Stock

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$0.318

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Continental Prestige Electronics

USA . 4,286 parts In-Stock

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$0.471

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$0.461

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Argo Parts USA

USA . 2,980 parts In-Stock

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$0.471

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$0.456

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Corphita

USA . 390 parts In-Stock

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$0.855

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iodParts Technologies Inc.

India . 68,788 parts In-Stock

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RC Electronics

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Kepictronics

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Epart123

USA . 30,000 parts In-Stock

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$1.250

Infinite Electronics LLP (Excess)

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S.R.D Solutions

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Problanco Electronics

Mexico . 7,958 parts In-Stock

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Kulean Microsystems

USA . 7,708 parts In-Stock

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A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

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Lixinc

USA . 2,750 parts In-Stock

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TANS Electronics

Latvia . 2,214 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.469

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$0.455

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$0.446

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UHIMA Technologies

Türkiye . 414 parts In-Stock

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Formix International (Excess)

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SupplyDigital Components

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Overview

Discover the power and reliability of the MBRA2H100T3G diode by Onsemi. Designed with cutting-edge technology and top-quality materials, this rectifier diode is perfect for power applications. With a maximum output current of 2A and a reverse test voltage of 100V, this diode offers superior performance and efficiency. Trust Onsemi's reputation for excellence and choose the MBRA2H100T3G for all your power needs. Unlock the potential of your projects with this high-quality diode that delivers unmatched value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and efficient installation on printed circuit boards, saving time and space.

Maximum Reverse Current: 8 uA

Ensures minimal power loss and efficiency in operation.

Reverse Test Voltage: 100 V

Suitable for a wide range of power applications.

Maximum Operating Temperature: 175 °C

Can withstand high temperatures, making it suitable for various operating environments.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification applications, ensuring reliable performance.

Maximum Output Current: 2 A

Capable of handling moderate levels of current, suitable for power applications.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, enhancing performance.

Maximum Non Repetitive Peak Forward Current: 130 A

Capable of handling high current surges, providing robustness in demanding conditions.

Diode Element Material: SILICON

Silicon diodes offer high efficiency and reliability in rectification applications.

Technical Specifications

Diodes & Rectifiers MBRA2H100T3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE

Application:

POWER

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.79 V

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

130 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Current:

8 uA

Reverse Test Voltage:

100 V

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MBRA2H100T3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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