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Unijunction Transistors (UFT)

Unijunction Transistors (UJT) are three-terminal semiconductor devices that are used in a variety of applications such as timing, triggering, and oscillation circuits.

A UJT consists of a lightly doped n-type silicon bar with a p-type material implanted in the center, forming two p-n junctions. The two outer ends of the n-type bar are the emitter (E) and collector (C) terminals, while the p-type material in the center is the base (B) terminal. The UJT has a high input impedance and a low output impedance.

When a voltage is applied to the emitter terminal, it causes a small forward bias on the emitter-base junction, which allows a small current to flow into the base region. As the voltage across the UJT increases, the emitter-base junction reaches a point where the current into the base region increases rapidly. This point is known as the "peak-point voltage" or Vp. Once the emitter-base junction is forward biased, the UJT behaves like a negative resistance device, with the current increasing as the voltage decreases.

UJTs are often used in relaxation oscillator circuits and as voltage-controlled switches. In oscillator circuits, the UJT is used to provide a timing signal that can be used to trigger other devices, such as thyristors or triacs. In switching applications, the UJT is used to control the turn-on and turn-off of other devices, such as transistors or SCRs.

Unijunction Transistors (UFT)

Available Parts 61

Part RoHS Manufacturer Description Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Maximum Emitter Current Terminal Form Package Shape No. of Elements Maximum Inter-base Voltage No. of Terminals Package Style (Meter) Sub-Category Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Minimum Intrinsic Stand-off Ratio Maximum Static Inter-Base Resistance Terminal Position JESD-30 Code Case Connection Qualification Maximum Intrinsic Stand-off Ratio Minimum Static Inter-Base Resistance JEDEC-95 Code JESD-609 Code Minimum Valley Point Current Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Peak Point Current
2N2646 by Texas Instruments

2N2646

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Valley Point Current: 4 mA; Maximum Intrinsic Stand-off Ratio: .75;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

125 Cel

SILICON

-65 Cel

.56

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.75

4.7 kohm

TO-18

4 mA

NOT SPECIFIED

NOT SPECIFIED

5 mA

NTE6400A by Nte Electronics

NTE6400A

Nte Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Terminals: 3; JESD-30 Code: O-MBCY-W3;

SINGLE

NO

.45 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

55 V

3

CYLINDRICAL

Unijunction Transistors

SILICON

.54

12 kohm

BOTTOM

O-MBCY-W3

Not Qualified

.67

4 kohm

TO-39

8 mA

NOT SPECIFIED

NOT SPECIFIED

25 mA

NTE6401 by Nte Electronics

NTE6401

Nte Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Intrinsic Stand-off Ratio: .75;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

SILICON

.56

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.75

4.7 kohm

TO-18

4 mA

NOT SPECIFIED

NOT SPECIFIED

5 mA

NTE6410 by Nte Electronics

NTE6410

Nte Electronics

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Terminal Position: BOTTOM;

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

SILICON

.7

9.1 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.85

4 kohm

TO-92

4 mA

NOT SPECIFIED

NOT SPECIFIED

5 mA

2N4948 by Texas Instruments

2N4948

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Peak Reflow Temperature (C): NOT SPECIFIED; Minimum Operating Temperature: -65 Cel;

SINGLE

NO

.36 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

200 Cel

SILICON

-65 Cel

.55

12 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.82

4 kohm

TO-18

2 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N5431 by Motorola

2N5431

Motorola

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Static Inter-Base Resistance: 8.5 kohm; Minimum Operating Temperature: -65 Cel; Maximum Inter-base Voltage: 35 V;

NO

.36 W

50 mA

35 V

Unijunction Transistors

125 Cel

-65 Cel

Tin/Lead (Sn/Pb)

.72

8.5 kohm

.8

6 kohm

e0

2 mA

4 mA

JANTX2N4948 by Motorola

JANTX2N4948

Motorola

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-206AA; Maximum Peak Point Current: 2 mA; Terminal Position: BOTTOM;

SINGLE

NO

METAL

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

SILICON

BOTTOM

O-MBCY-W3

Not Qualified

TO-206AA

2 mA

2 mA

2N4852 by Texas Instruments

2N4852

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Static Inter-Base Resistance: 4.7 kohm; Maximum Operating Temperature: 125 Cel;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

125 Cel

SILICON

-65 Cel

.7

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.85

4.7 kohm

TO-18

4 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N489 by Texas Instruments

2N489

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Operating Temperature: -65 Cel; JEDEC-95 Code: TO-5;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N490 by Texas Instruments

2N490

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N4851 by Texas Instruments

2N4851

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Emitter Current: 50 mA; No. of Elements: 1;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

200 Cel

SILICON

-65 Cel

.56

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.75

4.7 kohm

TO-18

2 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N491 by Texas Instruments

2N491

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JESD-30 Code: O-MBCY-W3; JEDEC-95 Code: TO-5;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N1671B by Texas Instruments

2N1671B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Valley Point Current: 8 mA; Terminal Form: WIRE;

SINGLE

NO

.45 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.47

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

2N489A by Texas Instruments

2N489A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Transistor Application: SWITCHING; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N492 by Texas Instruments

2N492

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Valley Point Current: 8 mA; JEDEC-95 Code: TO-5;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N490B by Texas Instruments

2N490B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; JEDEC-95 Code: TO-5; Maximum Emitter Current: 70 mA;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

2N4894 by Texas Instruments

2N4894

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Transistor Element Material: SILICON;

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

150 Cel

SILICON

-55 Cel

.74

12 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.86

4 kohm

2 mA

NOT SPECIFIED

NOT SPECIFIED

1 mA

2N493B by Texas Instruments

2N493B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Operating Temperature: -65 Cel;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.62

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.75

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

2N4853 by Texas Instruments

2N4853

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Package Body Material: METAL; Maximum Intrinsic Stand-off Ratio: .85;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

125 Cel

SILICON

-65 Cel

.7

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.85

4.7 kohm

TO-18

6 mA

NOT SPECIFIED

NOT SPECIFIED

.4 mA

2N494 by Texas Instruments

2N494

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Emitter Current: 70 mA; JESD-30 Code: O-MBCY-W3;

SINGLE

NO

.45 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.62

9.1 kohm

BOTTOM

O-MBCY-W3

Not Qualified

.75

6.2 kohm

TO-5

12 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N494A by Texas Instruments

2N494A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Elements: 1; Maximum Static Inter-Base Resistance: 9.1 kohm;

SINGLE

NO

.45 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.62

9.1 kohm

BOTTOM

O-MBCY-W3

Not Qualified

.75

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

15 mA

2N4893 by Texas Instruments

2N4893

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Inter-base Voltage: 25 V;

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

150 Cel

SILICON

-55 Cel

.55

12 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.82

4 kohm

2 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N4949 by Texas Instruments

2N4949

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Static Inter-Base Resistance: 12 kohm; Minimum Intrinsic Stand-off Ratio: .74;

SINGLE

NO

.36 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

200 Cel

SILICON

-65 Cel

.74

12 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.86

4 kohm

TO-18

2 mA

NOT SPECIFIED

NOT SPECIFIED

1 mA

2N1671 by Texas Instruments

2N1671

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Terminals: 3;

SINGLE

NO

.45 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.47

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

25 mA

2N494B by Texas Instruments

2N494B

Texas Instruments

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Intrinsic Stand-off Ratio: .75; Maximum Inter-base Voltage: 65 V; Maximum Peak Point Current: 6 mA;

NO

.45 W

70 mA

65 V

Unijunction Transistors

140 Cel

-65 Cel

.62

9.1 kohm

.75

6.2 kohm

8 mA

6 mA

JAN2N4948 by Texas Instruments

JAN2N4948

Texas Instruments

Unijunction Transistors; Qualification: Not Qualified;

Not Qualified

2N492A by Texas Instruments

2N492A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Shape: ROUND; Maximum Emitter Current: 70 mA;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N489B by Texas Instruments

2N489B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Static Inter-Base Resistance: 6.8 kohm; Minimum Operating Temperature: -65 Cel;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

2N4892 by Texas Instruments

2N4892

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Minimum Static Inter-Base Resistance: 4 kohm; Package Style (Meter): CYLINDRICAL;

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

150 Cel

SILICON

-55 Cel

.51

9.1 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.69

4 kohm

4 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

TIS43 by Texas Instruments

TIS43

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Maximum Peak Point Current: 5 mA;

SINGLE

NO

.36 W

PLASTIC/EPOXY

SWITCHING

WIRE

ROUND

1

3

CYLINDRICAL

Unijunction Transistors

SILICON

9.1 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.82

TO-92

2 mA

NOT SPECIFIED

NOT SPECIFIED

5 mA

2N1671A by Texas Instruments

2N1671A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Peak Reflow Temperature (C): NOT SPECIFIED; JEDEC-95 Code: TO-5;

SINGLE

NO

.45 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.47

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

25 mA

2N2160 by Texas Instruments

2N2160

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Transistor Element Material: SILICON; Minimum Intrinsic Stand-off Ratio: .47;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

150 Cel

SILICON

-65 Cel

.47

12 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.8

4 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

25 mA

2N492B by Texas Instruments

2N492B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Static Inter-Base Resistance: 9.1 kohm; Qualification: Not Qualified;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

2N491B by Texas Instruments

2N491B

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Qualification: Not Qualified; Minimum Operating Temperature: -65 Cel;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

6 mA

JAN2N491A by Texas Instruments

JAN2N491A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 3; Transistor Element Material: SILICON; Minimum Valley Point Current: 8 mA;

SINGLE

NO

METAL

WIRE

ROUND

1

3

CYLINDRICAL

SILICON

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

8 mA

12 mA

2N3980 by Texas Instruments

2N3980

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Transistor Element Material: SILICON; Package Style (Meter): CYLINDRICAL;

SINGLE

NO

.36 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

200 Cel

SILICON

-65 Cel

.68

8 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.82

4 kohm

TO-18

1 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N491A by Texas Instruments

2N491A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Body Material: METAL; Maximum Inter-base Voltage: 65 V;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.56

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.68

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N4947 by Texas Instruments

2N4947

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Intrinsic Stand-off Ratio: .69; Maximum Operating Temperature: 200 Cel;

SINGLE

NO

.36 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

200 Cel

SILICON

-65 Cel

.51

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.69

4 kohm

TO-18

4 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N4891 by Texas Instruments

2N4891

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-PBCY-W3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

NO

.3 W

PLASTIC/EPOXY

SWITCHING

50 mA

WIRE

ROUND

1

25 V

3

CYLINDRICAL

Unijunction Transistors

150 Cel

SILICON

-55 Cel

.55

9.1 kohm

BOTTOM

O-PBCY-W3

Not Qualified

.82

4 kohm

2 mA

NOT SPECIFIED

NOT SPECIFIED

5 mA

2N493 by Texas Instruments

2N493

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; No. of Elements: 1; JEDEC-95 Code: TO-5;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.62

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.75

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N493A by Texas Instruments

2N493A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Static Inter-Base Resistance: 6.8 kohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.62

6.8 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.75

4.7 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N490A by Texas Instruments

2N490A

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Minimum Intrinsic Stand-off Ratio: .51; Maximum Peak Point Current: 12 mA;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

.51

9.1 kohm

BOTTOM

O-MBCY-W3

ISOLATED

Not Qualified

.62

6.2 kohm

TO-5

8 mA

NOT SPECIFIED

NOT SPECIFIED

12 mA

2N2647 by Texas Instruments

2N2647

Texas Instruments

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; JEDEC-95 Code: TO-18;

SINGLE

NO

.3 W

METAL

SWITCHING

50 mA

WIRE

ROUND

1

35 V

3

CYLINDRICAL

Unijunction Transistors

125 Cel

SILICON

-65 Cel

.68

9.1 kohm

BOTTOM

O-MBCY-W3

BASE2

Not Qualified

.82

4.7 kohm

TO-18

8 mA

NOT SPECIFIED

NOT SPECIFIED

2 mA

2N2420B by Onsemi

2N2420B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .68; Package Body Material: METAL;

SINGLE

NO

.3 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

.56

9.1 kohm

BOTTOM

O-MBCY-W3

.68

6.2 kohm

TO-18

e0

8 mA

6 mA

2N492C by Onsemi

2N492C

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Maximum Inter-base Voltage: 65 V; Package Style (Meter): CYLINDRICAL;

SINGLE

NO

.45 W

METAL

SWITCHING

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

.56

9.1 kohm

BOTTOM

O-MBCY-W3

.68

6.2 kohm

TO-5

e0

8 mA

2 mA

2N2421B by Onsemi

2N2421B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-609 Code: e0; Maximum Intrinsic Stand-off Ratio: .75;

SINGLE

NO

.3 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

TIN LEAD

.62

6.8 kohm

BOTTOM

O-MBCY-W3

Not Qualified

.75

4.7 kohm

TO-18

e0

8 mA

6 mA

2N2422A by Onsemi

2N2422A

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; No. of Terminals: 3; Maximum Emitter Current: 70 mA;

SINGLE

NO

.3 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

.62

9.1 kohm

BOTTOM

O-MBCY-W3

.75

6.2 kohm

TO-18

e0

8 mA

12 mA

2N2419B by Onsemi

2N2419B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; JESD-30 Code: O-MBCY-W3; Minimum Valley Point Current: 8 mA;

SINGLE

NO

.3 W

METAL

70 mA

WIRE

ROUND

1

65 V

3

CYLINDRICAL

Unijunction Transistors

140 Cel

SILICON

-65 Cel

Tin/Lead (Sn/Pb)

.56

6.8 kohm

BOTTOM

O-MBCY-W3

.68

4.7 kohm

TO-18

e0

8 mA

6 mA