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Unijunction Transistors (UFT)

Unijunction Transistors (UJT) are three-terminal semiconductor devices that are used in a variety of applications such as timing, triggering, and oscillation circuits.

A UJT consists of a lightly doped n-type silicon bar with a p-type material implanted in the center, forming two p-n junctions. The two outer ends of the n-type bar are the emitter (E) and collector (C) terminals, while the p-type material in the center is the base (B) terminal. The UJT has a high input impedance and a low output impedance.

When a voltage is applied to the emitter terminal, it causes a small forward bias on the emitter-base junction, which allows a small current to flow into the base region. As the voltage across the UJT increases, the emitter-base junction reaches a point where the current into the base region increases rapidly. This point is known as the "peak-point voltage" or Vp. Once the emitter-base junction is forward biased, the UJT behaves like a negative resistance device, with the current increasing as the voltage decreases.

UJTs are often used in relaxation oscillator circuits and as voltage-controlled switches. In oscillator circuits, the UJT is used to provide a timing signal that can be used to trigger other devices, such as thyristors or triacs. In switching applications, the UJT is used to control the turn-on and turn-off of other devices, such as transistors or SCRs.

Unijunction Transistors (UFT)

Available Parts 3

Part# Info Specs
Part RoHS Manufacturer Description Case Connection Configuration Maximum Emitter Current Maximum Inter-base Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code No. of Elements No. of Terminals Package Body Material Package Shape Package Style (Meter) Maximum Peak Point Current Peak Reflow Temperature (C) Maximum Power Dissipation (Abs) Qualification Maximum Static Inter-Base Resistance Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Minimum Valley Point Current
NTE6401 by Nte Electronics

NTE6401

Nte Electronics

NTE6401 by Nte Electronics is a Unijunction Transistor (UFT) with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for switching applications due to its silicon element material and static inter-base resistance ranging from 4.7kohm to 9.1kohm.

BASE2

SINGLE

50 mA

35 V

.75

.56

TO-18

O-MBCY-W3

1

3

METAL

ROUND

CYLINDRICAL

5 mA

NOT SPECIFIED

.3 W

Not Qualified

9.1 kohm

4.7 kohm

Unijunction Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

4 mA

NTE6410 by Nte Electronics

NTE6410

Nte Electronics

NTE6410 by Nte Electronics is a plastic/epoxy unijunction transistor with single configuration for switching applications. It has a max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for low-power switching circuits due to its compact cylindrical package design and silicon element material.

SINGLE

50 mA

35 V

.85

.7

TO-92

O-PBCY-W3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

5 mA

NOT SPECIFIED

.3 W

Not Qualified

9.1 kohm

4 kohm

Unijunction Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

4 mA

NTE6400A by Nte Electronics

NTE6400A

Nte Electronics

NTE6400A by Nte Electronics is a Unijunction Transistor (UFT) with 3 terminals, made of silicon. It has a max emitter current of 50 mA and can handle up to 55 V inter-base voltage. Ideal for switching applications due to its low static inter-base resistance and high intrinsic stand-off ratio.

SINGLE

50 mA

55 V

.67

.54

TO-39

O-MBCY-W3

1

3

METAL

ROUND

CYLINDRICAL

25 mA

NOT SPECIFIED

.45 W

Not Qualified

12 kohm

4 kohm

Unijunction Transistors

NO

WIRE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

8 mA