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Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.

Phototransistors

Available Parts 548

Part RoHS Manufacturer Description Optoelectronic Type Mounting Feature Terminal Finish Configuration Size Maximum Dark Current No. of Functions Infrared (IR) Range Peak Wavelength (nm) Nominal Supply Voltage Packing Method Maximum Response Time Sub-Category Maximum Operating Temperature Shape Minimum Operating Temperature Minimum Collector-emitter Breakdown Voltage Maximum Power Dissipation Additional Features Nominal Light Current JESD-609 Code Maximum On State Current
3037 by Nte Electronics

3037

Nte Electronics

PHOTO TRANSISTOR; Maximum Dark Current: 200 nA; Nominal Light Current: 10 mA; Shape: ROUND; Configuration: SINGLE; No. of Functions: 1;

PHOTO TRANSISTOR

SINGLE

4.69 mm

200 nA

1

ROUND

RESPONDS FROM VISIBLE TO INFRA RED RANGE

10 mA

TEMT1020 by Vishay Intertechnology

TEMT1020

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: Matte Tin (Sn); Nominal Light Current: 7 mA; Maximum On State Current: .05 A; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR

SURFACE MOUNT

Matte Tin (Sn)

SINGLE

1.9 mm

200 nA

1

YES

880

TR, 7 INCH

.000002 s

Photo Transistors

85 Cel

ROUND

-40 Cel

70 V

.1 W

DAY LIGHT

7 mA

e3

.05 A

KDT00030TR by Onsemi

KDT00030TR

Onsemi

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: TIN; Minimum Operating Temperature: -40 Cel; JESD-609 Code: e3; Peak Wavelength (nm): 630;

PHOTO TRANSISTOR

SURFACE MOUNT

TIN

100 nA

630

Photo Transistors

85 Cel

-40 Cel

e3

BPW17N by Vishay Intertechnology

BPW17N

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .1 W; Shape: ROUND; Size: 1.8 mm;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

Matte Tin (Sn)

SINGLE

1.8 mm

200 nA

1

YES

825

.0000016 s

Photo Transistors

100 Cel

ROUND

32 V

.1 W

1 mA

e3

.05 A

SFH309FA-4 by Infineon Technologies

SFH309FA-4

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Minimum Operating Temperature: -55 Cel; Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

200 nA

900

.000007 s

Photo Transistors

100 Cel

-55 Cel

.165 W

e0

.015 A

SFH3015FA by Osram Opto Semiconductors

SFH3015FA

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Maximum Operating Temperature: 85 Cel; Peak Wavelength (nm): 870; Configuration: SINGLE;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

.35 mm

50 nA

1

YES

870

TR, 7 INCH

85 Cel

SQUARE

-25 Cel

15 V

100 mA

.015 A

QSB363ZR by Onsemi

QSB363ZR

Onsemi

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Terminal Finish: MATTE TIN; No. of Functions: 1; Configuration: SINGLE; JESD-609 Code: e3;

PHOTO TRANSISTOR

SURFACE MOUNT

MATTE TIN

SINGLE

1.9 mm

100 nA

1

YES

940

Photo Transistors

85 Cel

ROUND

-25 Cel

30 V

.075 W

DAY LIGHT FILTER

1.5 mA

e3

QSB363.ZR by Qt Optoelectronics

QSB363.ZR

Qt Optoelectronics

PHOTO TRANSISTOR; Configuration: SINGLE; Maximum Dark Current: 100 nA; Minimum Collector-emitter Breakdown Voltage: 30 V; No. of Functions: 1; Minimum Operating Temperature: -40 Cel;

PHOTO TRANSISTOR

SINGLE

1.9 mm

100 nA

1

85 Cel

ROUND

-40 Cel

30 V

.7 mA

KDT00030ATR by Onsemi

KDT00030ATR

Onsemi

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 40 nA; Peak Wavelength (nm): 630;

PHOTO TRANSISTOR

SURFACE MOUNT

40 nA

630

Photo Transistors

85 Cel

-40 Cel

TEPT4400 by Vishay Intertechnology

TEPT4400

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 570; Shape: ROUND; Nominal Light Current: .02 mA; Size: 3 mm;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

SINGLE

3 mm

50 nA

1

NO

570

BULK

Photo Transistors

85 Cel

ROUND

-40 Cel

6 V

.1 W

HIGH SENSITIVITY

.02 mA

.02 A

SFH309FA by Infineon Technologies

SFH309FA

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum On State Current: .015 A; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

200 nA

900

Photo Transistors

100 Cel

-55 Cel

e0

.015 A

ALS-PT19-315C/L177/TR8 by Everlight Electronics

ALS-PT19-315C/L177/TR8

Everlight Electronics

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 85 Cel; Infrared (IR) Range: NO; No. of Functions: 1; Size: 1.2 mm;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

1.2 mm

100 nA

1

NO

630

5 V

Photo ICs

85 Cel

RECTANGULAR

-40 Cel

1.52 mA

LPT80A by Infineon Technologies

LPT80A

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Power Dissipation: .1 W; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

870

Photo Transistors

100 Cel

-40 Cel

.1 W

e0

.05 A

QSE113 by Onsemi

QSE113

Onsemi

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Nominal Light Current: .25 mA; Minimum Operating Temperature: -40 Cel; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

TIN

SINGLE

1.65 mm

100 nA

1

YES

880

.000008 s

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER

.25 mA

e3

QSE114 by Onsemi

QSE114

Onsemi

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Response Time: .000008 s;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

TIN

SINGLE

1.65 mm

100 nA

1

YES

880

.000008 s

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER

1 mA

e3

TEMT6000X01 by Vishay Intertechnology

TEMT6000X01

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 100 Cel; Maximum On State Current: .02 A; Additional Features: DAY LIGHT, HIGH SENSITIVITY; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

2.4 mm

50 nA

1

NO

570

Photo Transistors

100 Cel

RECTANGULAR

-40 Cel

6 V

.1 W

DAY LIGHT, HIGH SENSITIVITY

.05 mA

.02 A

TEMT6200FX01 by Vishay Intertechnology

TEMT6200FX01

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum On State Current: .02 A; Infrared (IR) Range: NO; Maximum Dark Current: 50 nA; Minimum Collector-emitter Breakdown Voltage: 6 V;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

2 mm

50 nA

1

NO

550

Photo Transistors

100 Cel

RECTANGULAR

-40 Cel

6 V

.1 W

HIGH SENSITIVITY

.0046 mA

.02 A

SFH3219-Z by Osram Opto Semiconductors

SFH3219-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; Nominal Light Current: .063 mA; Shape: ROUND; Size: 2.575 mm; Maximum Operating Temperature: 100 Cel; Configuration: SINGLE;

PHOTO TRANSISTOR

SINGLE

2.575 mm

50 nA

1

YES

990

100 Cel

ROUND

-40 Cel

.063 mA

SFH3710-Z by Osram Opto Semiconductors

SFH3710-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; Terminal Finish: MATTE TIN OVER NICKEL; Size: 1.4 mm; Shape: RECTANGULAR; Infrared (IR) Range: NO; Peak Wavelength (nm): 570;

PHOTO TRANSISTOR

MATTE TIN OVER NICKEL

SINGLE

1.4 mm

50 nA

1

NO

570

85 Cel

RECTANGULAR

-40 Cel

5.5 V

.0025 mA

e3

OP804SL by Tt Electronics Plc

OP804SL

Tt Electronics Plc

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Infrared (IR) Range: YES; Nominal Light Current: 7 mA; Maximum Dark Current: 100 nA; Shape: ROUND;

PHOTO TRANSISTOR

RADIAL MOUNT

SINGLE

100 nA

1

YES

125 Cel

ROUND

-65 Cel

30 V

.25 W

7 mA

QSE113E3R0 by Onsemi

QSE113E3R0

Onsemi

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN; Infrared (IR) Range: YES; JESD-609 Code: e3; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

TIN

SINGLE

1.65 mm

100 nA

1

YES

880

.000008 s

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

HIGH SENSITIVITY, DAY LIGHT FILTER, SIDE LOOKER

.25 mA

e3

TEST2600 by Vishay Intertechnology

TEST2600

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN SILVER; Shape: RECTANGULAR; JESD-609 Code: e2; Minimum Collector-emitter Breakdown Voltage: 70 V;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

TIN SILVER

SINGLE

100 nA

1

YES

920

Photo Transistors

85 Cel

RECTANGULAR

-40 Cel

70 V

.1 W

DAYLIGHT FILTER, SIDE VIEW

2.5 mA

e2

.05 A

OP505A by Tt Electronics Plc

OP505A

Tt Electronics Plc

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Size: 3.05 mm; Maximum Power Dissipation: .1 W; Infrared (IR) Range: YES;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

SINGLE

3.05 mm

100 nA

1

YES

930

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

4.3 mA

SFH300FA by Infineon Technologies

SFH300FA

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel; Peak Wavelength (nm): 870;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

100 nA

870

Photo Transistors

100 Cel

-40 Cel

e0

.05 A

SFH309FA-4/5 by Osram Opto Semiconductors

SFH309FA-4/5

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Nominal Light Current: 1 mA; Maximum On State Current: .015 A; Maximum Power Dissipation: .165 W;

PHOTO TRANSISTOR

RADIAL MOUNT

TIN

SINGLE

50 nA

1

YES

900

Photo Transistors

100 Cel

-40 Cel

35 V

.165 W

1 mA

e3

.015 A

SD2440-004 by Honeywell Sensing And Control

SD2440-004

Honeywell Sensing And Control

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 125 Cel; Maximum Power Dissipation: .125 W; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .000015 s;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

100 nA

.000015 s

Photo Transistors

125 Cel

-55 Cel

.125 W

IS281GB by Isocom Components

IS281GB

Isocom Components

PHOTO TRANSISTOR; Terminal Finish: TIN; Size: 4.4 mm; No. of Functions: 1; Minimum Operating Temperature: -40 Cel; Shape: RECTANGULAR;

PHOTO TRANSISTOR

TIN

SINGLE

4.4 mm

100 nA

1

YES

100 Cel

RECTANGULAR

-40 Cel

70 V

e3

SFH313FA by Infineon Technologies

SFH313FA

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Dark Current: 200 nA; Maximum On State Current: .05 A; Maximum Operating Temperature: 100 Cel;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

200 nA

870

Photo Transistors

100 Cel

-55 Cel

e0

.05 A

SFH3400-Z by Osram Opto Semiconductors

SFH3400-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; Minimum Collector-emitter Breakdown Voltage: 20 V; No. of Functions: 1; Infrared (IR) Range: YES; Configuration: SINGLE; Shape: SQUARE;

PHOTO TRANSISTOR

SINGLE

2 mm

100 nA

1

YES

850

100 Cel

SQUARE

-40 Cel

20 V

.063 mA

BPV11 by Vishay Intertechnology

BPV11

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Configuration: SINGLE; Additional Features: HIGH SENSITIVITY; Size: 5 mm;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

Matte Tin (Sn)

SINGLE

5 mm

50 nA

1

YES

850

.0000033 s

Photo Transistors

ROUND

70 V

HIGH SENSITIVITY

10 mA

e3

SFH309FA-5/6 by Osram Opto Semiconductors

SFH309FA-5/6

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: RADIAL MOUNT; Terminal Finish: TIN; Minimum Operating Temperature: -40 Cel; Infrared (IR) Range: YES; JESD-609 Code: e3;

PHOTO TRANSISTOR

RADIAL MOUNT

TIN

SINGLE

50 nA

1

YES

900

Photo Transistors

100 Cel

-40 Cel

35 V

.165 W

1.6 mA

e3

.015 A

OP550A by Tt Electronics Plc

OP550A

Tt Electronics Plc

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; No. of Functions: 1; Configuration: SINGLE; Size: 1.58 mm; Maximum Power Dissipation: .1 W;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

SINGLE

1.58 mm

100 nA

1

YES

930

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

SIDE VIEW

2.55 mA

TEKT5400S-ASZ by Vishay Intertechnology

TEKT5400S-ASZ

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Matte Tin (Sn); Maximum Power Dissipation: .15 W; Minimum Collector-emitter Breakdown Voltage: 70 V; JESD-609 Code: e3;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

Matte Tin (Sn)

SINGLE

3 mm

100 nA

1

YES

920

Photo Transistors

85 Cel

ROUND

-40 Cel

70 V

.15 W

DAY LIGHT FILTER, SIDE VIEW

4 mA

e3

.1 A

SFH3710 by Osram Opto Semiconductors

SFH3710

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Configuration: SINGLE; Shape: SQUARE; Packing Method: TR, 7 INCH; Maximum Dark Current: 50 nA;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

50 nA

1

NO

570

TR, 7 INCH

Photo Transistors

85 Cel

SQUARE

-40 Cel

.0025 mA

.02 A

SFH3710-3/4-Z by Osram Opto Semiconductors

SFH3710-3/4-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; Minimum Operating Temperature: -40 Cel; Configuration: SINGLE; Infrared (IR) Range: NO; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570;

PHOTO TRANSISTOR

SINGLE

.29 mm

50 nA

1

NO

570

85 Cel

SQUARE

-40 Cel

.35 mA

PT100MF0MP1 by Sharp Corporation

PT100MF0MP1

Sharp Corporation

PHOTO TRANSISTOR; Terminal Finish: Gold (Au); Peak Wavelength (nm): 910; No. of Functions: 1; Nominal Light Current: 1.15 mA; Maximum Operating Temperature: 85 Cel;

PHOTO TRANSISTOR

Gold (Au)

SINGLE

1.6 mm

100 nA

1

YES

910

85 Cel

ROUND

-30 Cel

35 V

1.15 mA

e4

TEFT4300 by Vishay Intertechnology

TEFT4300

Vishay Intertechnology

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: TIN SILVER; Maximum Operating Temperature: 100 Cel; Shape: ROUND; JESD-609 Code: e2;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

TIN SILVER

SINGLE

3 mm

200 nA

1

YES

925

.0000023 s

Photo Transistors

100 Cel

ROUND

-40 Cel

70 V

.185 W

DAY LIGHT FILTER, HIGH SENSITIVITY

3.2 mA

e2

.05 A

SFH3711 by Osram Opto Semiconductors

SFH3711

Osram Opto Semiconductors

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Maximum Dark Current: 50 nA; Maximum Operating Temperature: 100 Cel; Nominal Light Current: .0017 mA; Shape: SQUARE;

PHOTO TRANSISTOR

SURFACE MOUNT

SINGLE

.29 mm

50 nA

1

NO

570

TR, 7 INCH

100 Cel

SQUARE

-40 Cel

AEC-Q101

.0017 mA

.02 A

OP644SL by Tt Electronics Plc

OP644SL

Tt Electronics Plc

PHOTO TRANSISTOR; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 930; Maximum Operating Temperature: 125 Cel; Maximum Dark Current: 100 nA; Minimum Operating Temperature: -65 Cel;

PHOTO TRANSISTOR

SURFACE MOUNT

100 nA

930

Photo Transistors

125 Cel

-65 Cel

.05 W

.05 A

SFH309FA-5 by Infineon Technologies

SFH309FA-5

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000009 s; Maximum Dark Current: 200 nA; JESD-609 Code: e0;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

200 nA

900

.000009 s

Photo Transistors

100 Cel

-55 Cel

.165 W

e0

.015 A

SDP8436-003 by Honeywell Sensing And Control

SDP8436-003

Honeywell Sensing And Control

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -40 Cel; Maximum Response Time: .00001 s; Maximum Power Dissipation: .06 W;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

100 nA

.00001 s

Photo Transistors

100 Cel

-40 Cel

.06 W

SD3443-003 by Honeywell Sensing And Control

SD3443-003

Honeywell Sensing And Control

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Maximum Power Dissipation: .15 W; Maximum Response Time: .000015 s; Maximum Operating Temperature: 125 Cel;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

100 nA

.000015 s

Photo Transistors

125 Cel

-55 Cel

.15 W

3123 by Nte Electronics

3123

Nte Electronics

PHOTO DARLINGTON; No. of Functions: 1; Size: 2.5 mm; Maximum Dark Current: 10000 nA; Configuration: SINGLE; Minimum Collector-emitter Breakdown Voltage: 35 V;

PHOTO DARLINGTON

SINGLE

2.5 mm

10000 nA

1

ROUND

35 V

.2 mA

OP550C by Tt Electronics Plc

OP550C

Tt Electronics Plc

PHOTO TRANSISTOR; Mounting Feature: THROUGH HOLE MOUNT; Maximum Dark Current: 100 nA; Infrared (IR) Range: YES; Additional Features: SIDE VIEW; Nominal Light Current: .25 mA;

PHOTO TRANSISTOR

THROUGH HOLE MOUNT

SINGLE

1.58 mm

100 nA

1

YES

930

Photo Transistors

100 Cel

ROUND

-40 Cel

30 V

.1 W

SIDE VIEW

.25 mA

SFH3400-2/3-Z by Osram Opto Semiconductors

SFH3400-2/3-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; Terminal Finish: Tin (Sn); Maximum Operating Temperature: 100 Cel; Nominal Light Current: .1 mA; Peak Wavelength (nm): 850; Size: 2 mm;

PHOTO TRANSISTOR

Tin (Sn)

SINGLE

2 mm

100 nA

1

YES

850

100 Cel

SQUARE

-40 Cel

20 V

.1 mA

e3

SFH3710-2/3-Z by Osram Opto Semiconductors

SFH3710-2/3-Z

Osram Opto Semiconductors

PHOTO TRANSISTOR; No. of Functions: 1; Maximum Dark Current: 50 nA; Peak Wavelength (nm): 570; Minimum Operating Temperature: -40 Cel; Shape: SQUARE;

PHOTO TRANSISTOR

SINGLE

.29 mm

50 nA

1

NO

570

85 Cel

SQUARE

-40 Cel

.35 mA

SFH3201 by Infineon Technologies

SFH3201

Infineon Technologies

Photo Transistors; Mounting Feature: SURFACE MOUNT; Peak Wavelength (nm): 860; Maximum Dark Current: 200 nA; Maximum On State Current: .015 A; Maximum Response Time: .000005 s;

SURFACE MOUNT

200 nA

860

.000005 s

Photo Transistors

100 Cel

-55 Cel

.165 W

.015 A

BPX86 by Infineon Technologies

BPX86

Infineon Technologies

Photo Transistors; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .000008 s; Minimum Operating Temperature: -40 Cel; Maximum Dark Current: 200 nA;

THROUGH HOLE MOUNT

Tin/Lead (Sn/Pb)

200 nA

.000008 s

Photo Transistors

85 Cel

-40 Cel

e0