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Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.

Phototransistors

Available Parts 22

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Collector-emitter Breakdown Voltage Configuration Maximum Dark Current Infrared (IR) Range JESD-609 Code Nominal Light Current Mounting Feature No. of Functions Maximum On State Current Maximum Operating Temperature Minimum Operating Temperature Optoelectronic Type Packing Method Peak Wavelength (nm) Maximum Power Dissipation Maximum Response Time Shape Size Sub-Category Terminal Finish
SDP8476-201 by Honeywell Sensing And Control

SDP8476-201

Honeywell Sensing And Control

Honeywell Sensing And Control's SDP8476-201 is a phototransistor with peak wavelength of 850nm. It operates b/w -40°C to 85°C, dissipating max power of 0.1W. Ideal for applications requiring THROUGH HOLE MOUNT feature and low dark current of 100nA.

100 nA

THROUGH HOLE MOUNT

85 Cel

-40 Cel

850

.1 W

Photo Transistors

SFH3015FA by Osram Opto Semiconductors

SFH3015FA

Osram Opto Semiconductors

Osram Opto Semiconductors' SFH3015FA is a single phototransistor with peak wavelength of 870nm. It operates b/w -25°C to 85°C, featuring a nominal light current of 100mA and max dark current of 50nA. Ideal for applications requiring infrared detection, it has a min collector-emitter breakdown voltage of 15V and can handle a max on state current of 0.015A.

15 V

SINGLE

50 nA

YES

100 mA

SURFACE MOUNT

1

.015 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

TR, 7 INCH

870

SQUARE

.35 mm

SMD2440-001 by Honeywell Sensing And Control

SMD2440-001

Honeywell Sensing And Control

SMD2440-001 by Honeywell is a single phototransistor with peak wavelength of 880nm. It operates b/w -55°C to 125°C, with max power dissipation of 0.125W. Ideal for applications requiring IR detection in surface mount configurations.

30 V

SINGLE

100 nA

YES

1.5 mA

SURFACE MOUNT

1

125 Cel

-55 Cel

PHOTO TRANSISTOR

880

.125 W

ROUND

Photo Transistors

SMD2440-002 by Honeywell Sensing And Control

SMD2440-002

Honeywell Sensing And Control

SMD2440-002 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. It is commonly used for optoelectronic applications requiring infrared range detection.

30 V

SINGLE

100 nA

YES

3 mA

SURFACE MOUNT

1

125 Cel

-55 Cel

PHOTO TRANSISTOR

880

.125 W

ROUND

Photo Transistors

SMD2440-011 by Honeywell Sensing And Control

SMD2440-011

Honeywell Sensing And Control

SMD2440-011 by Honeywell Sensing And Control is a single configuration phototransistor with a peak wavelength of 880nm. It operates in temperatures ranging from -55 to 125 °C and has a max power dissipation of 0.125W. This surface mount device is commonly used for optoelectronic applications requiring infrared detection.

30 V

SINGLE

100 nA

YES

1.5 mA

SURFACE MOUNT

1

125 Cel

-55 Cel

PHOTO TRANSISTOR

880

.125 W

ROUND

Photo Transistors

PT91-21C/TR7 by Everlight Electronics

PT91-21C/TR7

Everlight Electronics

The Everlight Electronics PT91-21C/TR7 is a 1.9mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with nominal light current of 1.5mA and max dark current of 100nA. Ideal for applications requiring IR detection and collector-emitter breakdown voltage of at least 30V.

HIGH SENSITIVITY

30 V

SINGLE

100 nA

YES

1.5 mA

1

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

ROUND

1.9 mm

VEMT4700F-GS08 by Vishay Intertechnology

VEMT4700F-GS08

Vishay Intertechnology

Vishay Intertechnology's VEMT4700F-GS08 is a 2.4mm single phototransistor with peak wavelength of 940nm. It operates b/w -40 to 100°C, has max power dissipation of 0.1W, and collector-emitter breakdown voltage of 70V. Ideal for IR applications with surface mounting feature.

DAY LIGHT FILTER, HIGH SENSITIVITY

70 V

SINGLE

200 nA

YES

.5 mA

SURFACE MOUNT

1

.05 A

100 Cel

-40 Cel

PHOTO TRANSISTOR

940

.1 W

ROUND

2.4 mm

Photo Transistors

PT204-6B by Everlight Electronics

PT204-6B

Everlight Electronics

The Everlight Electronics PT204-6B is a 3mm single phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with nominal light current of 0.7mA and max dark current of 100nA. Ideal for applications requiring infrared detection and min collector-emitter breakdown voltage of 30V.

30 V

SINGLE

100 nA

YES

.7 mA

1

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

ROUND

3 mm

PT26-21C/TR8 by Everlight Electronics

PT26-21C/TR8

Everlight Electronics

The Everlight Electronics PT26-21C/TR8 is a 1.6mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and nominal light current of 2.6mA. Ideal for surface mount applications in infrared range with collector-emitter breakdown voltage of 60V and on state current up to 0.02A.

60 V

SINGLE

50 nA

YES

2.6 mA

SURFACE MOUNT

1

.02 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

.075 W

ROUND

1.6 mm

Photo Transistors

PT334-6C by Everlight Electronics

PT334-6C

Everlight Electronics

The Everlight Electronics PT334-6C is a 5mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and nominal light current of 3.5mA. Ideal for applications requiring IR detection in through hole mounting configurations.

30 V

SINGLE

100 nA

YES

3.5 mA

THROUGH HOLE MOUNT

1

.02 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

.075 W

ROUND

5 mm

Photo Transistors

PT91-21B/TR10 by Everlight Electronics

PT91-21B/TR10

Everlight Electronics

Everlight Electronics' PT91-21B/TR10 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and nominal light current of 1.5mA.

30 V

SINGLE

100 nA

YES

1.5 mA

SURFACE MOUNT

1

.02 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

.075 W

ROUND

1.9 mm

Photo Transistors

PT91-21B/TR7 by Everlight Electronics

PT91-21B/TR7

Everlight Electronics

PT91-21B/TR7 by Everlight Electronics is a 1.9mm phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, with max power dissipation of 0.075W and on-state current of 0.02A. Ideal for IR applications due to its infrared range and surface mount feature.

30 V

SINGLE

100 nA

YES

1.5 mA

SURFACE MOUNT

1

.02 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

.075 W

ROUND

1.9 mm

Photo Transistors

PT91-21B/TR9 by Everlight Electronics

PT91-21B/TR9

Everlight Electronics

The Everlight Electronics PT91-21B/TR9 is a 1.9mm round phototransistor with peak wavelength of 940nm. It operates b/w -25°C to 85°C, has a max power dissipation of 0.075W, and can handle an on-state current of 0.02A. Ideal for applications requiring infrared detection in compact spaces with surface mount requirements.

30 V

SINGLE

100 nA

YES

1.5 mA

SURFACE MOUNT

1

.02 A

85 Cel

-25 Cel

PHOTO TRANSISTOR

940

.075 W

ROUND

1.9 mm

Photo Transistors

NTE3122 by Nte Electronics

NTE3122

Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.

35 V

SINGLE

1000 nA

YES

THROUGH HOLE MOUNT

1

.05 A

85 Cel

-25 Cel

PHOTO DARLINGTON

860

.075 W

.00008 s

ROUND

Photo Transistors

BPX43-4/5 by Osram Opto Semiconductors

BPX43-4/5

Osram Opto Semiconductors

Osram Opto Semiconductors' BPX43-4/5 is a 4.7mm single phototransistor with peak wavelength of 880nm. It operates b/w -40°C to 125°C, with max power dissipation of 0.22W and response time of 0.000018s. Ideal for IR applications, it has a nominal light current of 15mA and max on state current of 0.05A.

SINGLE

100 nA

YES

e3

15 mA

THROUGH HOLE MOUNT

1

.05 A

125 Cel

-40 Cel

PHOTO TRANSISTOR

880

.22 W

.000018 s

ROUND

4.7 mm

Photo Transistors

Tin (Sn)

PT480FE0000F by Sharp Corporation

PT480FE0000F

Sharp Corporation

Sharp Corporation's PT480FE0000F is a 1.6mm PHOTO TRANSISTOR with peak wavelength of 860nm. It operates b/w -25°C to 85°C, with collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current of 0.8mA with low dark current at 100nA.

SIDE VIEW

35 V

SINGLE

100 nA

YES

e1

.8 mA

1

85 Cel

-25 Cel

PHOTO TRANSISTOR

860

ROUND

1.6 mm

Tin/Silver/Copper (Sn/Ag/Cu)

PT481E00000F by Sharp Corporation

PT481E00000F

Sharp Corporation

Sharp Corporation's PT481E00000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 800nm. It operates b/w -25°C to 85°C, has Tin/Silver/Copper terminal finish, and nominal light current of 10mA. Ideal for applications requiring IR detection with min collector-emitter breakdown voltage of 35V.

SIDE VIEW

35 V

SINGLE

1000 nA

YES

e1

10 mA

1

85 Cel

-25 Cel

PHOTO DARLINGTON

800

ROUND

1.6 mm

Tin/Silver/Copper (Sn/Ag/Cu)

PT481FE0000F by Sharp Corporation

PT481FE0000F

Sharp Corporation

Sharp Corporation's PT481FE0000F is a 1.6mm PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. Operating b/w -25°C to 85°C, it has a min collector-emitter breakdown voltage of 35V. Ideal for applications requiring infrared detection and light current up to 0.9mA.

SIDE VIEW

35 V

SINGLE

1000 nA

YES

e1

.9 mA

1

85 Cel

-25 Cel

PHOTO DARLINGTON

860

ROUND

1.6 mm

Tin/Silver/Copper (Sn/Ag/Cu)

SFH3400-2/3-Z by Osram Opto Semiconductors

SFH3400-2/3-Z

Osram Opto Semiconductors

SFH3400-2/3-Z by Osram Opto Semiconductors is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40 to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.1mA light current sensitivity.

20 V

SINGLE

100 nA

YES

e3

.1 mA

1

100 Cel

-40 Cel

PHOTO TRANSISTOR

850

SQUARE

2 mm

Tin (Sn)

SFH3400-Z by Osram Opto Semiconductors

SFH3400-Z

Osram Opto Semiconductors

The Osram Opto Semiconductors SFH3400-Z is a 2mm square phototransistor with peak wavelength of 850nm. It operates b/w -40°C to 100°C, with collector-emitter breakdown voltage of 20V. Ideal for applications requiring IR detection and 0.063mA light current sensitivity.

20 V

SINGLE

100 nA

YES

.063 mA

1

100 Cel

-40 Cel

PHOTO TRANSISTOR

850

SQUARE

2 mm

SFH3710-3/4-Z by Osram Opto Semiconductors

SFH3710-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3710-3/4-Z is a single phototransistor with peak wavelength of 570nm. It operates b/w -40°C to 85°C, producing nominal light current of 0.35mA and max dark current of 50nA. Ideal for applications requiring square shape optoelectronic components in compact 0.29mm size.

SINGLE

50 nA

NO

.35 mA

1

85 Cel

-40 Cel

PHOTO TRANSISTOR

570

SQUARE

.29 mm

SFH3605-3/4-Z by Osram Opto Semiconductors

SFH3605-3/4-Z

Osram Opto Semiconductors

Osram Opto Semiconductors SFH3605-3/4-Z is a single phototransistor with peak wavelength of 990nm. It operates b/w -40 to 100°C, dissipating max 0.13W power. Ideal for IR applications, it has max on-state current of 0.015A and nominal light current of 0.18mA.

AEC-Q101

SINGLE

50 nA

YES

.18 mA

SURFACE MOUNT

1

.015 A

100 Cel

-40 Cel

PHOTO TRANSISTOR

TR, 7 INCH

990

.13 W

ROUND