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NTE3122

Nte Electronics

NTE3122 by Nte Electronics

NTE3122 by Nte Electronics is a PHOTO DARLINGTON phototransistor with peak wavelength of 860nm. It operates b/w -25°C to 85°C, has max power dissipation of 0.075W, and max response time of 0.00008s. Ideal for applications requiring IR detection due to its infrared range capability.

Median Price

$1.980

Lifecycle Status

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Newark

USA . 1,202 parts In-Stock

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Nova Conductors

Japan . 51 parts In-Stock

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$0.927

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TME

Poland . 89 parts In-Stock

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DigiKey Marketplace

USA . 1,572 parts In-Stock

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$1.900

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Bristol Electronics

USA . 3 parts In-Stock

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American Microsemiconductor Inc.

USA . 1,008 parts In-Stock

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Vyrian

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Electronic Expediters

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Aranea Global

USA . 2,000 parts In-Stock

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$0.908

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$0.872

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Argo Parts USA

USA . 4,878 parts In-Stock

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Continental Prestige Electronics

USA . 2,087 parts In-Stock

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AZTECH Wire

Italy . 885 parts In-Stock

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Overview

Illuminate your projects with the NTE3122 phototransistor by Nte Electronics. With its high-quality construction and reliable performance, this photo Darlington transistor is a versatile choice for a wide range of applications. From light sensors to automatic brightness control, this component offers exceptional value with its fast response time, low power dissipation, and infrared capabilities. Trust in NTE Electronics to deliver the products you need to bring your ideas to life.

Feature Benefit Bullets

Peak Wavelength (nm): 860

The peak wavelength of 860nm makes this phototransistor suitable for applications requiring detection or sensing in the infrared spectrum.

Optoelectronic Type: PHOTO DARLINGTON

The Photo Darlington optoelectronic type enhances the sensitivity and amplification of the phototransistor, making it ideal for applications requiring high sensitivity and low signal detection.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this phototransistor can operate efficiently in various environmental conditions without the risk of overheating.

Minimum Operating Temperature: -25 °C

The low minimum operating temperature of -25°C allows this phototransistor to function effectively even in cold environments.

Maximum Power Dissipation: 0.075 W

The maximum power dissipation of 0.075W ensures that the phototransistor can handle higher power levels without being damaged, making it reliable for demanding applications.

Infrared (IR) Range: YES

The presence of an Infrared (IR) range in this phototransistor allows it to detect and respond to infrared light, expanding its utility in infrared sensing applications.

Maximum Response Time: 0.00008 s

With a fast maximum response time of 0.00008s, this phototransistor can quickly detect changes in light intensity, making it ideal for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 35 V

The high minimum collector-emitter breakdown voltage of 35V ensures that the phototransistor can withstand high voltage levels, increasing its durability and reliability.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and provides a secure and stable mounting option for the phototransistor in various applications.

Maximum On State Current: 0.05 A

The high maximum on-state current of 0.05A allows the phototransistor to handle higher current loads, making it suitable for applications requiring higher power output.

Technical Specifications

Phototransistors NTE3122 attributes and parameters. Explore more Phototransistors devices from Nte Electronics

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Maximum Dark Current:

1000 nA

Infrared (IR) Range:

YES

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.05 A

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

860

Maximum Power Dissipation:

.075 W

Maximum Response Time:

.00008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Manufacturer Highlights

Nte Electronics

Founded in New Jersey in 1979, NTE Electronics, Inc has grown from a small-town supplier with ten semiconductors in its entire line to the largest aftermarket semiconductor supplier in the industry. Today, our product line consists of over 23,000 devices. Included in this offering is NTE Brand Semiconductors. In January 2001 NTE acquired the assets of the ECG division of Philips N.A. With this addition, NTE became the industry leader in supplying private label aftermarket electronic components to the Industrial, Commercial, Consumer, and MRO marketplace. NTE is a Master Distributor for some of the industry's major manufacturers of electronic components and accessories. NTE's 40,000 square foot headquarters in Bloomfield, NJ houses, under one roof, all the essential services and inventory to continually supply electronic components to its worldwide network of authorized distributors. NTE's warehouse maintains a large inventory of each device to ensure a 98% fill rate and an average 24-hour shipping time. NTE devices are quality tested to consistently assure that they meet or exceed the industry specifications of the device they are replacing. They have been used in NASA space projects, German automobiles, hospital/medical applications and in virtually every type of consumer item. NTE's global network of distributors extends across the United States, Canada, Latin America, the Caribbean and 35 other countries throughout the world. No matter how you measure success, NTE Electronics, Inc has become the leader in the replacement electronic component industry.

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