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QSB320TR

Onsemi

QSB320TR by Onsemi

QSB320TR by Onsemi is a single phototransistor with peak wavelength of 880nm. It operates b/w -55°C to 100°C, has a max power dissipation of 0.165W, and can handle a max on state current of 0.015A. Ideal for infrared applications in surface mount configurations.

Median Price

$0.640

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Rochester

USA . 281 parts In-Stock

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$0.211

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$0.175

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$0.156

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DigiKey

USA . 281 parts In-Stock

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$1.070

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$1.070

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Digiode

USA . 1,598 parts In-Stock

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$0.164

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Vyrian

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Q Components

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Demsay Elektronik

Türkiye . 222 parts In-Stock

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Ampacity Inc.

Singapore . 205 parts In-Stock

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$0.147

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Corphita

USA . 2,181 parts In-Stock

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Corohmni

South Africa . 458 parts In-Stock

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Perfect Parts

USA . 6,563 parts In-Stock

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Problanco Electronics

Mexico . 5,208 parts In-Stock

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Kulean Microsystems

USA . 3,445 parts In-Stock

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Continental Prestige Electronics

USA . 2,281 parts In-Stock

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Supply Digital

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TANS Electronics

Latvia . 1,889 parts In-Stock

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SupplyDigital Components

Austria . 1,666 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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Overview

Experience superior quality and reliability with the QSB320TR phototransistor from Onsemi. This innovative component offers unmatched performance and precision, making it ideal for a wide range of applications. With a focus on delivering value and benefits to our customers, Onsemi ensures that this product provides exceptional sensitivity and accuracy in detecting light, ensuring optimal performance in various electronic devices. Trust Onsemi's expertise in optoelectronics to enhance the functionality of your products with the QSB320TR phototransistor.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration makes it easy to integrate into electronic circuits and simplifies design.

Size: 2.4 mm

Compact size allows for versatile placement in various applications.

Peak Wavelength (nm): 880

Peak wavelength of 880nm makes it suitable for specific applications that require detection or transmission in this range.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity to light, making it ideal for light detection applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliable performance in a wide range of environments.

Shape: ROUND

Round shape allows for uniform light detection from all directions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in cold environments.

Terminal Finish: Tin (Sn)

Tin finish provides good conductivity and corrosion resistance for long-lasting performance.

Maximum Power Dissipation: 0.165 W

High maximum power dissipation allows for handling of higher power levels without overheating.

Nominal Light Current: 0.016 mA

Nominal light current ensures accurate light detection with low power consumption.

Maximum Dark Current: 200 nA

Low maximum dark current ensures minimal interference in low light conditions.

Infrared (IR) Range: YES

Infrared range capability enables detection of infrared light for specialized applications.

Packing Method: TR

TR packing method provides protection during shipping and handling.

Minimum Collector-emitter Breakdown Voltage: 30 V

Minimum breakdown voltage of 30V allows for safe operation in high voltage applications.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation and provides secure mounting in electronic devices.

Maximum On State Current: 0.015 A

High maximum on state current allows for reliable switching capabilities.

Technical Specifications

Phototransistors QSB320TR attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

.016 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Packing Method:

TR

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.165 W

Shape:

ROUND

Size:

2.4 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

QSB320TR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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