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LS617

Texas Instruments

LS617 by Texas Instruments

LS617 by Texas Instruments is a single phototransistor with a round shape. It operates b/w -65°C to 125°C, with a max power dissipation of 0.05W. Ideal for applications requiring fast response time and IR detection, it has a collector-emitter breakdown voltage of 50V.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,928 parts In-Stock

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3,928

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Vyrian

USA . 2,640 parts In-Stock

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2,640

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 552 parts In-Stock

1+ parts

$0.406

100+ parts

-

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$1.589

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552

$0.406

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$1.589

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DigiPath Technology Company

USA . 1,116 parts In-Stock

1+ parts

$0.447

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$0.411

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1,116

$0.447

$0.411

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ChromeModa Solutions

Germany . 3,901 parts In-Stock

1+ parts

$0.456

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$0.374

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3,901

$0.456

$0.374

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IDEA Electronic Components Group

UK . 2,378 parts In-Stock

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$0.456

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$0.410

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2,378

$0.456

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$0.410

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Semicontronic

India . 1,388 parts In-Stock

1+ parts

$2.100

100+ parts

$2.048

1k+ parts

$2.037

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1,388

$2.100

$2.048

$2.037

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One Stop Electronics

USA . 302 parts In-Stock

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$3.100

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302

$3.100

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AZTECH Wire

Italy . 441 parts In-Stock

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$13.543

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441

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Corphita

USA . 4,984 parts In-Stock

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Corohmni

South Africa . 72 parts In-Stock

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Overview

Experience superior quality and reliability with the LS617 phototransistor by Texas Instruments. As a trusted manufacturer in the industry, Texas Instruments offers cutting-edge technology that exceeds expectations. The LS617 is perfect for applications requiring precision and accuracy, thanks to its quick response time and high light current capability. Whether you're designing sensors, industrial control systems, or optical detectors, this phototransistor delivers unmatched value, making it the top choice for professionals seeking exceptional performance. Upgrade your projects with the LS617 and discover the difference today.

Feature Benefit Bullets

Configuration: SINGLE

Simplicity in design allows for easy integration into various applications.

Optoelectronic Type: PHOTO TRANSISTOR

Designed specifically for light detection which ensures accurate readings in light-sensitive applications.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for use in a range of environments.

Minimum Operating Temperature: -65 °C

Capable of operating in extremely low temperatures, expanding its usability in different conditions.

Maximum Power Dissipation: 0.05 W

Efficient power usage and reduced heat generation for long-term reliability.

Nominal Light Current: 7 mA

Provides a consistent output under varying light conditions, ensuring reliable performance.

Maximum Dark Current: 25 nA

Low dark current minimizes interference and improves accuracy in detecting light.

Infrared (IR) Range: YES

Ability to detect infrared light expands its applications to include infrared sensing capabilities.

Maximum Response Time: 0.000008 s

Fast response time allows for quick detection and reaction to changes in light levels.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage ensures protection against voltage spikes and enhances overall product durability.

Mounting Feature: THROUGH HOLE MOUNT

Easy installation and secure mounting for reliable operation in various setups.

Technical Specifications

Phototransistors LS617 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

7 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS617 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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