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LS614

Texas Instruments

LS614 by Texas Instruments

LS614 by Texas Instruments is a single configuration phototransistor with a round shape. It operates in temperatures ranging from -65°C to 125°C and has a max power dissipation of 0.05W. With nominal light current of 4mA, it is ideal for applications requiring fast response times such as infrared sensing in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,124 parts In-Stock

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Digiode

USA . 561 parts In-Stock

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561

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Parana Technologies

USA . 1,131 parts In-Stock

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$0.090

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$1.452

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1,131

$0.090

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$1.452

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DigiPath Technology Company

USA . 242 parts In-Stock

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$0.099

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$0.091

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242

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ChromeModa Solutions

Germany . 1,898 parts In-Stock

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$0.101

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$0.083

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IDEA Electronic Components Group

UK . 1,865 parts In-Stock

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$0.101

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$0.091

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Semicontronic

India . 1,428 parts In-Stock

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$12.100

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$11.798

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$11.737

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$11.737

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Ampacity Inc.

Singapore . 753 parts In-Stock

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$12.100

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$12.100

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One Stop Electronics

USA . 566 parts In-Stock

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$12.100

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AZTECH Wire

Italy . 676 parts In-Stock

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$14.983

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Corphita

USA . 2,006 parts In-Stock

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Corohmni

South Africa . 237 parts In-Stock

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Overview

Discover the LS614 by Texas Instruments, a high-quality phototransistor that delivers exceptional performance in various applications. With Texas Instruments' reputation for excellence in manufacturing, you can trust that this product offers reliability and durability. Whether used in sensing applications or light detection systems, the LS614 provides value with its quick response time and wide operating temperature range. Experience the benefits of precise light detection and efficient power dissipation with the LS614 phototransistor. Choose Texas Instruments for superior innovation and quality.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies the circuit design and makes it easy to integrate into various applications.

Optoelectronic Type: PHOTO TRANSISTOR

Photo transistors are sensitive to light, making them ideal for light sensing applications such as light intensity measurement or automatic lighting control.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows the phototransistor to withstand harsh environmental conditions.

Shape: ROUND

Round shape provides uniform light collection from all directions, ensuring accurate light sensing.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature allows the phototransistor to operate in cold environments without any issues.

Maximum Power Dissipation: 0.05 W

Low power dissipation helps in energy-efficient operation and prevents overheating of the phototransistor.

Nominal Light Current: 4 mA

High nominal light current provides a strong signal output in response to the incident light, ensuring reliable light sensing.

Maximum Dark Current: 25 nA

Low dark current ensures minimal output signal in the absence of light, reducing noise and improving the signal-to-noise ratio.

Infrared (IR) Range: YES

Infrared capability extends the range of light detection to include infrared wavelengths, enabling a wider range of applications such as remote control systems.

Maximum Response Time: 0.000008 s

Fast response time allows the phototransistor to detect rapid changes in light intensity, making it suitable for high-speed applications.

Minimum Collector-emitter Breakdown Voltage: 50 V

High breakdown voltage ensures the phototransistor can handle high voltages without damage, improving the overall reliability of the circuit.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting provides a secure and reliable connection to the circuit board, preventing the phototransistor from getting dislodged during operation.

Technical Specifications

Phototransistors LS614 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

4 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS614 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

NSN

5980-21-878-5289, 5980218785289

NIIN

218785289

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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