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LS618

Texas Instruments

LS618 by Texas Instruments

LS618 by Texas Instruments is a single phototransistor with max temp of 125°C. It has nominal light current of 8mA, response time of 0.000008s, and IR range. Ideal for applications requiring fast response to light such as optical sensors or proximity detectors.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,667 parts In-Stock

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4,667

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Vyrian

USA . 3,777 parts In-Stock

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3,777

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Distributors (Availability)

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Parana Technologies

USA . 320 parts In-Stock

1+ parts

$0.547

100+ parts

-

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$1.651

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320

$0.547

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$1.651

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DigiPath Technology Company

USA . 1,685 parts In-Stock

1+ parts

$0.603

100+ parts

$0.554

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1,685

$0.603

$0.554

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ChromeModa Solutions

Germany . 6,293 parts In-Stock

1+ parts

$0.615

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$0.504

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6,293

$0.615

$0.504

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IDEA Electronic Components Group

UK . 1,712 parts In-Stock

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$0.615

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$0.554

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1,712

$0.615

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$0.554

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Semicontronic

India . 1,093 parts In-Stock

1+ parts

$3.100

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$3.022

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$3.007

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1,093

$3.100

$3.022

$3.007

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Ampacity Inc.

Singapore . 1,032 parts In-Stock

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$9.100

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1,032

$9.100

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AZTECH Wire

Italy . 544 parts In-Stock

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$13.857

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544

$13.857

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One Stop Electronics

USA . 1,566 parts In-Stock

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$19.100

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1,566

$19.100

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Corphita

USA . 2,572 parts In-Stock

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2,572

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Corohmni

South Africa . 229 parts In-Stock

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Overview

Experience unparalleled quality and precision with the LS618 phototransistor by Texas Instruments. Known for their innovative technology and reliable products, Texas Instruments delivers cutting-edge solutions for a wide range of applications. The LS618 offers exceptional value and performance, with a fast response time and high light current. Whether used in robotics, security systems, or industrial automation, this phototransistor provides unmatched sensitivity and accuracy. Choose Texas Instruments for superior optoelectronic components that exceed expectations.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration makes it easy to integrate into various applications without the need for additional components or complex setups.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor allows for light detection capabilities, making it suitable for applications where detecting light levels is necessary.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this phototransistor can be used in environments where temperatures can reach high levels without compromising performance.

Shape: ROUND

The round shape allows for easy mounting and integration into various systems or devices.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature ensures that this phototransistor can be used in cold environments without any issues.

Maximum Power Dissipation: 0.05 W

With a low power dissipation value, this phototransistor is energy-efficient and helps in reducing overall power consumption in the system.

Nominal Light Current: 8 mA

The high nominal light current allows for accurate and efficient light detection, making it a reliable choice for light sensor applications.

Maximum Dark Current: 25 nA

The low dark current helps in reducing noise and improving the signal-to-noise ratio, making this phototransistor suitable for low-light level applications.

Infrared (IR) Range: YES

Having an infrared range makes this phototransistor suitable for applications that require IR light detection, expanding its range of use cases.

Maximum Response Time: 0.000008 s

The fast response time ensures quick and accurate light detection, making this phototransistor ideal for applications where real-time sensing is crucial.

Minimum Collector-emitter Breakdown Voltage: 50 V

The high breakdown voltage provides protection against voltage surges, ensuring the longevity and reliability of this phototransistor in different operating conditions.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature makes it easy to securely mount this phototransistor onto a PCB or other surfaces, ensuring stable and reliable operation.

Technical Specifications

Phototransistors LS618 attributes and parameters. Explore more Phototransistors devices from Texas Instruments

Specs

Additional Features:

TTL COMPATIBLE

Minimum Collector-emitter Breakdown Voltage:

50 V

Configuration:

SINGLE

Maximum Dark Current:

25 nA

Infrared (IR) Range:

YES

Nominal Light Current:

8 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.05 W

Maximum Response Time:

.000008 s

Shape:

ROUND

Sub-Category:

Photo Transistors

Trade Compliance

LS618 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.B

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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