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QSB363YR

Onsemi

QSB363YR by Onsemi

The Onsemi QSB363YR is a single phototransistor with a peak wavelength of 940nm. It operates b/w -25°C to 85°C, with a max power dissipation of 0.075W. Ideal for applications requiring infrared detection in compact spaces due to its small size and surface mount feature.

Median Price

$0.376

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 1,034 parts In-Stock

1+ parts

$0.910

100+ parts

$0.457

1k+ parts

$0.387

10k+ parts

$0.335

1,034

$0.910

$0.457

$0.387

$0.335

Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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-

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4,000

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Rochester

USA . 1,964 parts In-Stock

1+ parts

-

100+ parts

$0.333

1k+ parts

$0.277

10k+ parts

$0.247

1,964

-

$0.333

$0.277

$0.247

Verical

USA . 1,964 parts In-Stock

1+ parts

-

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$0.308

1,964

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$0.308

DigiKey

USA . 1,000 parts In-Stock

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-

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$0.420

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1,000

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$0.420

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Distributors (In-Stock)

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Vyrian

USA . 3,155 parts In-Stock

1+ parts

$0.230

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3,155

$0.230

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Digiode

USA . 2,541 parts In-Stock

1+ parts

$0.260

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2,541

$0.260

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Flip Electronics

USA . 4,990 parts In-Stock

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4,990

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DigiKey Marketplace

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,313 parts In-Stock

1+ parts

$0.196

100+ parts

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2,313

$0.196

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Corohmni

South Africa . 434 parts In-Stock

1+ parts

$0.230

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434

$0.230

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Corphita

USA . 2,543 parts In-Stock

1+ parts

$0.247

100+ parts

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2,543

$0.247

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Metaverse IC Inc.

Canada . 36,800 parts In-Stock

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36,800

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Kepictronics

USA . 25,658 parts In-Stock

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25,658

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Problanco Electronics

Mexico . 4,518 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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TANS Electronics

Latvia . 2,587 parts In-Stock

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Supply Digital

USA . 2,091 parts In-Stock

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2,091

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Continental Prestige Electronics

USA . 1,964 parts In-Stock

1+ parts

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$0.330

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1,964

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$0.330

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SupplyDigital Components

Austria . 1,795 parts In-Stock

1+ parts

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1,795

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UHIMA Technologies

Türkiye . 528 parts In-Stock

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528

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Kulean Microsystems

USA . 514 parts In-Stock

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514

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Overview

Experience the superior quality and reliability of the QSB363YR phototransistor by Onsemi. This innovative product offers exceptional performance in various optoelectronic applications, with a peak wavelength of 940nm and a nominal light current of 1.5mA. The sleek design and high precision of this phototransistor make it ideal for use in sensors, detectors, and other light-sensitive devices. Trust in Onsemi's reputation for excellence and choose the QSB363YR for your next project to enjoy unmatched value and efficiency.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration simplifies the design and makes it easier to integrate into various applications.

Size: 1.9 mm

Compact size allows for easy installation and integration into small spaces or devices.

Peak Wavelength (nm): 940

Peak wavelength of 940 nm is ideal for applications requiring infrared detection or communication.

Optoelectronic Type: PHOTO TRANSISTOR

Being a phototransistor, it offers higher sensitivity to light compared to traditional photodiodes, making it suitable for low-light conditions.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this phototransistor can withstand more thermal stress and operate reliably in various environments.

Shape: ROUND

Round shape allows for easy placement and alignment during assembly.

Minimum Operating Temperature: -25 °C

Low minimum operating temperature ensures reliable performance even in cold conditions.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for reliable connections.

Maximum Power Dissipation: 0.075 W

High maximum power dissipation rating ensures that the phototransistor can handle transient or prolonged high power conditions without damage.

Nominal Light Current: 1.5 mA

Nominal light current of 1.5 mA indicates the sensitivity of the phototransistor and its ability to convert light into electrical signals efficiently.

Maximum Dark Current: 100 nA

Low maximum dark current ensures minimal leakage current when no light is present, leading to accurate light sensing.

Infrared (IR) Range: YES

Having an infrared range makes this phototransistor suitable for applications such as IR remote controls, sensors, and security systems.

Minimum Collector-emitter Breakdown Voltage: 30 V

With a high collector-emitter breakdown voltage, the phototransistor can withstand higher voltage levels without breakdown, ensuring reliability and safety.

Mounting Feature: SURFACE MOUNT

Surface mounting feature simplifies the assembly process and allows for automated placement on circuit boards, saving time and effort.

Technical Specifications

Phototransistors QSB363YR attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

DAY LIGHT FILTER

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

100 nA

Infrared (IR) Range:

YES

JESD-609 Code:

e3

Nominal Light Current:

1.5 mA

Mounting Feature:

No. of Functions:

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-25 Cel

Optoelectronic Type:

Peak Wavelength (nm):

940

Maximum Power Dissipation:

.075 W

Shape:

ROUND

Size:

1.9 mm

Sub-Category:

Photo Transistors

Terminal Finish:

Trade Compliance

QSB363YR Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.70.80

SB

8541.40.70.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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