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QSB320F

Onsemi

QSB320F by Onsemi

The Onsemi QSB320F is a single phototransistor with peak wavelength of 880nm. It operates b/w -55 °C to 100°C, with max power dissipation of 0.165W. Ideal for IR applications due to its min collector-emitter breakdown voltage of 30V and surface mounting feature.

Median Price

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Lifecycle Status

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Digiode

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Vyrian

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Kepictronics

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TANS Electronics

Latvia . 7,800 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

Austria . 4,193 parts In-Stock

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Supply Digital

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Problanco Electronics

Mexico . 2,222 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 655 parts In-Stock

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Corohmni

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Overview

Experience the superior quality and reliability of the QSB320F phototransistor by Onsemi. With a peak wavelength of 880nm, this single configuration device offers unparalleled performance in a compact 2.4mm size. Ideal for applications requiring precise light detection, such as optical sensors and industrial automation systems, the QSB320F provides exceptional value with its low power dissipation and high sensitivity. Trust Onsemi's legacy of excellence and innovation to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies design and reduces complexity, making it a cost-effective and efficient choice.

Size: 2.4 mm

Compact size allows for easy integration into various devices or systems without taking up much space.

Peak Wavelength (nm): 880

Peak wavelength of 880nm makes this phototransistor suitable for applications requiring detection of infrared light.

Optoelectronic Type: PHOTO TRANSISTOR

Phototransistor type offers high sensitivity to light, making it ideal for light detection applications.

Maximum Operating Temperature: 100 °C

High maximum operating temperature ensures reliability and stability even in demanding environments.

Shape: ROUND

Round shape simplifies mounting and integration, providing ease of use for designers and manufacturers.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in cold environments without performance degradation.

Maximum Power Dissipation: 0.165 W

High maximum power dissipation capability enables the phototransistor to handle high power levels without damage.

Nominal Light Current: 0.016 mA

Nominal light current provides a baseline for light detection, ensuring accurate and reliable operation.

Maximum Dark Current: 200 nA

Low dark current minimizes noise and improves signal-to-noise ratio for precise light detection capabilities.

Infrared (IR) Range: YES

Infrared range support allows for detection and sensing of infrared light, expanding the range of applications for this phototransistor.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum collector-emitter breakdown voltage provides robust protection against voltage spikes or fluctuations.

Mounting Feature: SURFACE MOUNT

Surface mount feature simplifies installation and integration onto circuit boards, saving time and effort during manufacturing.

Maximum On State Current: 0.015 A

High maximum on-state current capability allows the phototransistor to handle large current flows when activated.

Technical Specifications

Phototransistors QSB320F attributes and parameters. Explore more Phototransistors devices from Onsemi

Specs

Additional Features:

HIGH SENSITIVITY

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Maximum Dark Current:

200 nA

Infrared (IR) Range:

YES

Nominal Light Current:

.016 mA

Mounting Feature:

No. of Functions:

1

Maximum On State Current:

.015 A

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Peak Wavelength (nm):

880

Maximum Power Dissipation:

.165 W

Shape:

ROUND

Size:

2.4 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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